UNISONIC TECHNOLOGIES CO., LTD DTC143T NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Lead Free Halogen Free DTC143TG-AE3-R DTC143TG-AL3-R DTC143TG-AN3-R DTC143TL-T9S-B DTC143TG-T9S-B DTC143TL-T9S-K DTC143TG-T9S-K Note: Pin Assignment: E: Emitter B: Base C: Collector Package SOT-23 SOT-323 SOT-523 TO-92SP TO-92SP Pin Assignment 1 2 3 E B C E B C E B C E C B E C B Packing Tape Reel Tape Reel Tape Reel Tape Box Bulk MARKING SOT-23 / SOT-323 / SOT-523 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd TO-92SP 1of 3 QW-R206-059.G DTC143T NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA SOT-523 150 Collector Power Dissipation SOT-23/SOT-323 PC 200 mW TO-92SP 550 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL Collector-Base Breakdown Voltage BVCBO Collector-Emitter Breakdown Voltage BVCEO Emitter-Base Breakdown Voltage BVEBO Collector Cut-off Current ICBO Emitter Cut-off Current IEBO Collector-Emitter Saturation Voltage VCE(SAT) DC Current Gain hFE Input Resistance R1 Transition Frequency fT Note: Transition frequency of the device. TEST CONDITIONS IC =50μA IC =1mA IE =50μA VCB=50V VEB =4V IC =5mA, IB=0.25mA VCE=5V, IC=1mA VCE=10V, IE =5mA, f=100MHz (Note) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 50 50 5 TYP 100 3.29 250 4.7 250 MAX UNIT V V V 0.5 μA 0.5 μA 0.3 V 600 6.11 kΩ MHz 2 of 3 QW-R206-059.G DTC143T NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS DC Current Gain vs. Collector Current 1000 V CE =5V 500 Collector-Emitter Saturation Voltage vs. Collector Current 1 TA=100 25 -40 200m 200 TA=100 100 100m 25 -40 50 50m 20 20m 10 10m 5 5m 2 2m 1 0.1 Ic/IB =20 500m 0.2 0.5 1 2 5 10 20 50 100 Collector Current, IC (mA) 1m 0.1 0.2 0.5 1 2 5 10 20 50 100 Collector Current, IC (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-059.G