2N6718L

UNISONIC TECHNOLOGIES CO., LTD
2N6718
NPN SILICON TRANSISTOR
NPN GENERAL PLANAR
TRANSISTOR

DESCRIPTION
The UTC 2N6718 is designed for general purpose medium
power amplifier and switching applications.

FEATURES
* High Power: 850mW
* High Current: 1A

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2N6718G-x-AB3-R
SOT-89
2N6718L-x-T6C-K
2N6718G-x-T6C-K
TO-126C
2N6718L-x-T92-B
2N6718G-x-T92-B
TO-92
2N6718L-x-T92-K
2N6718G-x-T92-K
TO-92
Note: Pin Assignment: B: Base
C: Collector
E: Emitter

Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
E
C
B
Packing
Tape Reel
Bulk
Tape Box
Bulk
MARKING
SOT-89
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
TO-126C
TO-92
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2N6718

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Continue)
Collector Current (Pulse)
RATINGS
UNIT
100
V
100
V
5
V
1
A
2
A
SOT-89
0.5
W
Total Power Dissipation
TO-126C
PD
1.6
W
TO-92
850
mW
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-40 ~ +125
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCBO
VCEO
VEBO
IC
IC
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC=100uA
Collector-Emitter Breakdown Voltage (note)
BVCEO IC=1mA
Emitter-Base Breakdown Voltage
BVEBO IE=10A
Collector-Emitter Saturation Voltage
VCE(SAT) IC=350mA, IB=35mA
Collector Cut-Off Current
ICBO
VCB=80V
VCE=1V, IC=50mA
hFE1
DC Current Gain
hFE2
VCE=1V, IC=250mA
hFE3
VCE=1V, IC=500mA
Current Gain - Bandwidth Product
fT
VCE=10V, IC=50mA, f=100MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
Note: Pulse test: PulseWidth≤380s, Duty Cycle≤2%

MIN TYP MAX UNIT
100
V
100
V
5
V
350 mV
100 nA
80
50
300
20
50
MHz
20
pF
CLASSIFICATION OF hFE2
RANK
RANGE
A
50~115
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
95~300
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Current Gain, hFE
Saturation Voltage (mV)
TYPICAL CHARACTERISTICS
Saturation Voltage
vs. Collector Current
Collector Output Capacitance
100
Capacitance (pF)
10000
1000
VBE(SAT)@Ic=10IB
10
Cob
1
100
1
10
100
1000
10000
0.1
10
1
Collector Current, Ic (mA)
Collector Base Voltage (V)
Safe Operating Area
Cutoff Frequency
vs. Collector Current
10
100
1000
Cutoff Frequency (MHz)
1ms
Collector Current, Ic(A)
Saturation Voltage (mV)

NPN SILICON TRANSISTOR
1
100ms
0.1
0.01
1s
1
10
100
Forward Voltage, VCE(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
[email protected]=10V
100
1
10
100
Collector Current, Ic(mA)
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TYPICAL CHARACTERISTICS
Power Derating
Power Dissipation, PD(mW)

NPN SILICON TRANSISTOR
2000
1500
TO-126C
TO-92
SOT-89
1000
500
0
0
50
100
150
200
Ambient Temperature, Ta(℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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