UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant and PWM converter topologies. FEATURES * RDS(ON) < 0.18Ω @ VGS=10V, ID=10A * Ultra Low gate charge (typical 43nC) * Low reverse transfer capacitance (CRSS = typical 100 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-066.I UF640 Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen-Free UF640G-AA3-R UF640L-TA3-T UF640G-TA3-T UF640L-TF1-T UF640G-TF1-T UF640L-TF2-T UF640G-TF2-T UF640L-TF3-T UF640G-TF3-T UF640L-TN3-R UF640G-TN3-R UF640L-T2Q-T UF640G-T2Q-T UF640L-T2Q-R UF640G-T2Q-R UF640L-TQ2-T UF640G-TQ2-T UF640L-TQ2-R UF640G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-220 TO-220F1 TO-220F2 TO-220F TO-252 TO-262 TO-262 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tape Reel Tube Tube Tube Tube Tape Reel Tube Tape Reel Tube Tape Reel MARKING SOT-223 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TO-220 / TO-220F / TO-220F1 TO-220F2 / TO-252 / TO-262 / TO-263 2 of 6 QW-R502-066.I UF640 Power MOSFET ABSOLUTE MAXIMUM RATING (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 200 V Drain-Gate Voltage (RGS=20kΩ) VDGR 200 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 18 A Pulsed Drain Current (Note 2) IDM 72 A Single Pulse Avalanche Energy Rating (Note 2) EAS 242 mJ SOT-223 66 TO-220 123 Maximum Power TO-220F 40 PD W Dissipation TO-220F1/TO-220F2 42 TO-252 83 TO-262/TO-263 139 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L=3.37mH, VDD=50V, RG=25Ω, peak IAS=12A, starting TJ=25°C 3. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER SOT-223 TO-220/TO-220F Junction to Ambient TO-220F1/TO-220F2 TO-262/TO-263 TO-252 SOT-223 TO-220 TO-220F Junction to Case TO-220F1/TO-220F2 TO-252 TO-262/TO-263 SYMBOL RATINGS 57 UNIT θJA 62.5 °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJC 110 1.8 1.01 3.1 2.9 1.5 0.9 °C/W 3 of 6 QW-R502-066.I UF640 Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Total Gate Charge Gate Source Charge Gate Drain Charge SYMBOL BVDSS IDSS IGSS VGS(THR) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG(TOT) QGS QGD TEST CONDITIONS MIN ID=250μA, VGS=0V VDS = Rated BVDSS, VGS = 0V VGS= ±20V 200 VGS=VDS, ID=250μA VGS=10V, ID=10A TYP 2 0.14 ISM 25 ±100 V μA nA 4 0.18 V Ω 805 240 46 VDS=25V, VGS=0V, f=1MHz 40 58 127 86 89 9 VDD=100V,ID≈18A, RG=9.1Ω,RL=5.4Ω, MOSFET Switching Times are Essentially Independent of Operating Temperature VGS=10V, ID≈18A, VDS=0.8 x Rated BVDSS Gate Charge is Essentially Independent of Operating Temperature IG(REF) = 1.5mA pF pF pF 52 72 152 104 110 24 SOURCE TO DRAIN DIODE SPECIFICATIONS Diode Forward Voltage (Note) VSD TJ=25°C, IS=18A, VGS=0V, Continuous Source Current Integral Reverse p-n Junction IS Diode in the MOSFET (body diode) Drain Pulse Source Current (body diode) (Note) MAX UNIT Gate ns ns ns ns nC nC nC 2.0 V 18 A 72 A 530 5.6 ns μC Sourse Reverse Recovery Time trr TJ=25°C, IS=18A, dIS/dt=100A/μs Reverse Recovery Charge QRR TJ=25°C, IS=18A, dIS/dt=100A/μs Note: Pulse Test: Pulse width ≤ 300μs, duty cycle ≤ 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 120 1.3 240 2.8 4 of 6 QW-R502-066.I UF640 Power MOSFET TEST CIRCUIT VDS RL 10% 0 RG VDD VGS 90% D.U.T. 90% VGS 50% 10% 0 tD(ON) tON Fig.3 Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR PULSE WIDTH 50% tD(OFF) tF tOFF Fig.4 Resistive Switching Waveforms 5 of 6 QW-R502-066.I UF640 Power MOSFET TYPICAL CHARACTERISTICS Saturation Characteristics 30 Pulse Duration = 80µs Duty Cycle = 0.5% MAX 24 18 VGS=6V Drain to Source On Resistance vs. Gate Voltage And Drain Current 1.5 Pulse Duration = 80µs Duty Cycle = 0.5% Max 1.2 0.8 12 0.6 6 0.3 VGS=10V 0 0 3.0 4.0 1.0 2.0 5.0 Drain to Source Voltage, VDS (V) 0 0 45 60 15 30 Drain Current, ID (A) 75 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-066.I