High Voltage Fast-Switching NPN Power Transistor

09-O
SBP130
300
h Vol
N Power Tra
nsisto
Hig
igh
olttage Fast-Sw
-Swiitching NP
NPN
ran
torr
Fea
eattures
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
B
C
rip
General Desc
scrip
ripttion
TO220
E
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
um Ratin
gs
Absolute Maxim
imu
ing
Symbol
Parameter
Test Conditions
Value
Units
VCES
Collector-Emitter Voltage
VBE = 0
700
V
VCEO
Collector-Emitter Voltage
IB = 0
400
V
VEBO
Emitter-Base Voltage
Collector Current
IC = 0
9.0
V
IC
12
A
ICP
Collector pulse Current
25
A
IB
Base Current
6.0
A
IBM
Base Peak Current
12
A
PC
Total Dissipation at TC = 25℃
100
W
TJ
Operation Junction Temperature
- 40 ~ 150
℃
TSTG
Storage Temperature
- 40 ~ 150
℃
Value
Units
1.25
℃/W
40
℃/W
tP = 5ms
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
Jan 2008. Rev. 0
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T01-3
09-O
SBP130
300
tr
arac
sti
cs (TC=25℃ unless otherwise noted)
Elec
ectr
triical Ch
Cha
actteri
ris
tics
Value
Symbol
VCEO(sus)
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
Min
Typ
Max
400
-
-
-
-
VCE(sat)
Collector-Emitter Saturation Voltage
1.5
V
3.0
Ic=12A,Ib=3.0A
Ic=8.0A,Ib=1.6A
V
1.0
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Units
-
-
2.0
-
-
-
-
-
-
Vce=5V,Ic=5.0A
10
-
40
Vce=5V, Ic=8.0A
6
-
40
1.5
3.0
0.17
0.4
0.8
2.0
0.04
0.1
0.8
2.5
0.05
0.15
V
Tc=100℃
I Ic=5.0A,Ib=1.0A
VBE(sat)
Base-Emitter Saturation Voltage
Ic=8.0A,Ib=1.6A
Ic=8.0A,Ib=1.6A
1.2
1.6
1.5
V
V
Tc=100℃
ICBO
hFE
Collector-Base Cutoff Current
Vcb=700V
(Vbe=-1.5V)
Vcb=700V, Tc=100℃
DC Current Gain
ts
tf
Resistive Load
Storage Time
Fall Time
VCC=125V ,
IB1=1.6A ,
Tp=25㎲
Ic=6.0A
IB2=-1.6A
ts
tf
Inductive Load
Storage Time
Fall Time
VCC=15V ,Ic=5A
IB1=1.6A , Vbe(off)=5V
L=0.35mH,Vclamp=300V
ts
tf
Inductive Load
Storage Time
Fall Time
VCC=15V ,Ic=1A
IB1=0.4A , Vbe(off)=5V
L=0.2mH,Vclamp=300V
Tc=100℃
-
-
1.0
5.0
mA
㎲
㎲
㎲
Not
e:
Note
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
Steady, keep you advance
09-O
SBP130
300
Fig. 1 DC Current Gain
Fig. 2 Collector-Emitter Saturation Voltage
Fig. 3 Base--Emitter Saturation Voltage
Fig.5 Power Derating
Fig. 4 Safe Operation Area
Fig.6 Reverse Biased Safe Operation Area
3/5
Steady, keep you advance
09-O
SBP130
300
d Switch
Resistive Loa
oad
tchiing Test Circu
cuiit
ct
ive Load Switc
hing & RBSOA Test Ci
rcu
it
Indu
duct
ctive
tch
Circu
rcuit
4/5
Steady, keep you advance
09-O
SBP130
300
220 Packa
ge Di
mension
TOO-220
ackag
Dim
Unit: mm
5/5
Steady, keep you advance