Sensitive Gate Silicon Controlled Rectifiers

WCD6C60S
Sensitive Gate
Silicon Controlled Rectifiers
Features
�
Repetitive Peak Off-State Voltage : 600V
�
R.M.S On-State Current ( IT(RMS)= 6 A )
�
Low On-State Voltage (1.6V(Max.) @ ITM)
General Description
Sensitive gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings (T = 25°C unless otherwise specified)
J
Parameter
Symbol
VDRM
Condition
Repetitive Peak Off-State Voltage
Ratings
Units
600
V
Tc =110 °C
3.8
A
Tc =110 °C
6
A
66
A
Average On-State Current(180°
IT(AV)
Conduction Angle)
R.M.S On-State Current(180°
IT(RMS)
Conduction Angle)
1/2 Cycle, 60Hz, Sine
ITSM
Surge On-State Current
WaveNon-Repetitive
I 2t
I2t for Fusing
t =10ms
21
A2s
di/dt
Critical rate of rise of on-state current
F=60Hz,Tj=125 °C
50
A/㎲
PGM
Forward Peak Gate Power Dissipation
5
W
0.5
W
Forward Average Gate Power
PG(AV)
Tj=125 °C
Dissipation
IFGM
Forward Peak Gate Current
2
A
VRGM
Reverse Peak Gate Voltage
5.0
V
TJ
Operating Junction Temperature
-40~125 °C
°C
TSTG
Storage Temperature
-40~150 °C
°C
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case(DC)
RθJA
Thermal Resistance Junction to Ambient(DC)
Rev.A Sep.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Value
Units
3.12
℃/W
89
℃/W
WCD6C60S
Electrical Characteristics (TC=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
IDRM
Repetitive Peak Off-State Current
VTM
Peak On-State Voltage (1)
IGT
Gate Trigger Current (2)
VGT
Gate Trigger Voltage (2)
VGD
Non-Trigger Gate Voltage (1)
dv/dt
IL
Latching Current
-
-
10
μA
TC=125℃
-
-
200
μA
-
-
1.6
V
-
-
0.2
mA
-
-
1.5
V
VAK=6V(DC),RL=10Ω
TC=125℃
VD=6V(DC),RL=10Ω
TC=125℃
Voltage
Holding Current
TC=25℃
ITM=9A, tp=380㎲
Critical Rate of Rise Off-State
IH
VAK=VDRM
Value
Units
Min Typ Max
VAK=12V,RL=100Ω TC=125℃
0.2
V
Linear slope up to
VD=67%VDRM, gate open
200
-
-
V/㎲
-
-
20
mA
-
50
-
mA
TJ=125℃
IT=100mA, Gate open
TC=25℃
IG=1.2 IGT
*Notes:
1.Pulse Width ≤1.0ms,Duty cycle≤1%
2.RGK Current not Included in measurement.
2/5
Steady, keep you advance
WCD6C60S
Fig.1
Fig.1Average on -State current versus case
temperature
Fig. 3Relative variation of gate trigger current
and holding current versus junction temperature
Fig.5
Fig.5Correlation between Maximum average Power
dissipation and Maximum allowable temperatures
(tamb and tcase )for different thermal resistances
heatsink+contact.
Fig .2 Correlation between maximum average
power dissipation and maximum allowable temperatures (tamb and tcase)for different thermal
resistances heatsink+contact
Fig. 4 Maximum permissible non -repetitive peak
On-state current ITSM,versus number of cycles,for
Sinusoidal currents.f=60Hz
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width Tp≤10ms and
corresponding value of l2t
3/5
Steady, keep you advance
WCD6C60S
7 On-state characteristics(maximum values)
Fig.
Fig.7
Fig.8
Fig.8Transient thermal impedance Zth j-mb,Versus
Pulse width tp
4/5
Steady, keep you advance
WCD6C60S
TO
2 Package Dimension
TO--25
252
Unit: mm
5/5
Steady, keep you advance