Silicon N-Channel MOSFET

P12N60
WF
WFP
Silicon N-Channel MOSFET
Features
■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 43nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi ’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS
Value
Units
Drain Source Voltage
Parameter
600
V
Continuous Drain Current(@Tc=25℃)
12
A
Continuous Drain Current(@Tc=100℃)
7.6
A
48
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
880
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
25
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
Total Power Dissipation(@Tc=25℃)
250
W
Derating Factor above 25℃
2.0
W/℃
-55~150
℃
300
℃
PD
TJ, Tstg
TL
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance, Junction-to-Case
-
-
0.50
℃/W
RQCS
Thermal Resistance, Case-to-Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
℃/W
Rev.A Oct.2010
[email protected] Microelectronics Co., Ltd., All right reserved.
P12N60
WF
WFP
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
IGSS
VGS = ±30 V, VDS = 0 V
-
-
±100
nA
V(BR)GSS
IG = ±10 μA, VDS = 0 V
±30
-
-
V
IDSS
VDS = 500 V, VGS = 0 V
-
-
1
μA
Drain−source breakdown voltage
V(BR)DSS
ID = 250 μA, VGS = 0 V
600
-
-
V
Break Voltage Temperature
ΔBVDSS/
ID=250μA, Referenced to
-
0.5
-
V/℃
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Coefficient
ΔTJ
25℃
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
3
-
4.5
V
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 6.0A
-
0.37
0.65
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 6.0A
-
15
-
S
Input capacitance
Ciss
VDS = 25 V,
-
1580
2055
Reverse transfer capacitance
Crss
VGS = 0 V,
-
19
24
Coss
f = 1 MHz
-
180
235
VDD =250 V,
-
25
60
ton
ID =12A
-
100
210
tf
RG=9.1Ω
-
130
270
-
100
210
-
43
56
-
7.5
-
-
18.5
-
Output capacitance
Rise time
Turn−on time
Switching time
Fall time
tr
pF
ns
RD=31Ω
Turn−off time
toff
(Note4,5)
Total gate charge (gate−source
VDD = 400 V,
Qg
plus gate−drain)
VGS = 10 V,
nC
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
ID = 1 A
(Note4,5)
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
12
A
Pulse drain reverse current
IDRP
-
-
-
48
A
Forward voltage (diode)
VDSF
IDR = 12 A, VGS = 0 V
-
-
1.4
V
Reverse recovery time
trr
IDR = 12 A, VGS = 0 V,
-
418
-
ns
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
4.85
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=11.2mH,IAS=12A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤12A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
P12N60
WF
WFP
Fig.1 On-State Characteristics
Fig.3 Capacitance Variation vs
Drain voltage
Fig.5 On-Resistance Variation vs
Junction Temperature
Fig.2 Transfer Characteristics
Fig.4 Breakdown Voltage Variation
vs Temperature
Fig.6 Gate Charge Characteristics
3/7
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P12N60
WF
WFP
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current
vs Case Temperature
Fig.9 Transient Thermal Response curve
4/7
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P12N60
WF
WFP
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
5/7
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P12N60
WF
WFP
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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P12N60
WF
WFP
TO-220 Package Dimension
Unit:mm
7/7
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