WFD5N60B Product Description
Silicon N-Channel MOSFET
Features
D
�
4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 15nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
G
S
General Description
This Power
MOSFET is produced using Winsemi's advanced
D
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
G
electronic lamp ballast, high efficiency switched mode power
DPAK
supplies, active power factor correction.
S
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current(@Tc=25℃)
4.5
A
Continuous Drain Current(@Tc=100℃)
3.1
A
16
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
240
mJ
EAR
Repetitive Avalanche Energy
(Note1)
10
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ns
50
W
Derating Factor above 25℃
0.39
W/℃
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
TL
Channel Temperature
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Thermal Characteristics
Symbol
Value
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
2.5
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
83
℃/W
WT-F047-Rev.A1 May.2013
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WFD5N60B Product Description
Silicon N-ChannelMOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,VGS=0V
-
-
10
µA
VDS=480V,Tc=125℃
-
-
100
µA
ID=250 µA,Referenced to 25℃
-
0.6
-
V/℃
Drain Cut -off current
IDSS
Breakdown voltage Temperature coefficient
△BVDSS/△TJ
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
600
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=2.25A
-
2.0
2.4
Ω
Forward Transconductance
gfs
VDS=50V,ID=2.25A
-
4.0
-
S
Input capacitance
Ciss
VDS=25V,
-
490
642
Reverse transfer capacitance
Crss
VGS=0V,
-
9
12
Output capacitance
Coss
f=1MHz
-
95
124
VDD=300V,
-
49
111
Turn-on Rise time
tr
Turn-on delay time
Td(on)
ID=4.5A
-
16
42
tf
RG=25Ω
-
37
84
-
46
102
-
15
20
-
3.4
-
-
5
-
Min
Type
Switching time
Turn-off Fall time
Turn-off delay time
(Note4,5)
Td(off)
Total gate charge(gate-source
pF
ns
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=4.5A
(Note,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Max
Unit
Continuous drain reverse current
IDR
-
-
-
4.5
A
Pulse drain reverse current
IDRP
-
-
-
17.6
A
Forward voltage(diode)
VDSF
IDR=4.5A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=4.5A,VGS=0V,
-
330
-
ns
Reverse recovery charge
Qrr
dIDR /dt =100 A /µs
-
2.67
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=25mH IAS=4.5A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤4.5A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFD5N60B Product Description
Silicon N-ChannelMOSFET
10
VG S
10
To p
15V
10V
8V
7V
6. 5 V
6V
5V
I D[A]
B o tto m
150。
C
I D[A]
5. 5 V
1
。
25 C
Notes:
1
Notes:
1.250us pulse test
。
2.Tc=40 C
1.250us pulse test
。
2.Tc=25 C
0 .1
2
10
4
5
10
6
V G S [V]
VD S [V ]
Fig.2 Transfer Current characteristics
Fig.1 On-Region characteristics
10
2 .2
VG S =10V
2 .0
。
I DR[A]
R DS (on)[ Ω ]
2 .4
1 .8
25 C
1
。
150 C
1 .6
Notes:
。
Note:T=25 C
1 .4
1.250us pulse test
2.V G S =0V
VG S =20V
1 .2
0
1
2
3
4
5
0 .1
0 .4
6
0 .5
0 .6
0 .7
0 .8
I D[A]
0 .9
Fig.3 On-Resistance Variation vs Drain
Current and Gate Voltage
1 .2
1 .3
12
Ciss=Cgs+Cgd(Cds=shorted)
VD S =480V
Coss=Cds+Cgd
10
Crss=Cgd
6 X 1 02
V GS Gate source Voltage[V]
Capacitance[pF]
1 .1
Fig.4 Body Diode Forward Voltage
Variation with Source Current
and Temperature
8 X 1 02
4 X 1 02
2 X 1 02
VD S =300V
VD S =120V
8
6
4
2
0
0 .0
1 0 -1
100
2
0
101
Fig.5 Capacitance Characteristics
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4
6
8
10
12
14
Qg Toltal Gate Charge[nC]
V D S Drain-Source Voltage[V]
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1 .0
V S D [V]
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Fig.6 Gate Charge Characteristics
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WFD5N60B Product Description
1 .1 5
3 .0
1 .1 0
2 .5
BDS(on) (Normalized)
BV DSS (Normalized)
Silicon N-ChannelMOSFET
1 .0 5
1 .0 0
0 .9 5
1 .5
1 .0
Notes:
Notes:
0 .5
1.V G S =0V
0 .9 0
-7 5
2 .0
-5 0
-2 5
25
0
50
75
T j[。
C ]
100
2.I D=2.0A
125
0 .0
-7 5
150
-5 0
-2 5
0
25
50
T j[ 。
C ]
75
100
125
150
Fig.8 On-Resistance Variation vs.
Temperature
Fig.7 Breakdown Voltage Variation
vs.Temperature
10
1.V G S =10V
2.I D=250uA
2
5
Operation in T his Area
is Lim ited by R D S ( on)
4
101
100us
1m s
3
DC
100
ID[A]
I D [A]
10m s
1 0 -1
Notes:
1
1.Tc=25。
C
2 .T J=25 。
C
3.Single pulse
1 0 -2
100
2
0
101
102
103
25
50
75
VD S [V]
ZθJC (t),Thermal Response
Fig.9 Maximum Safe Operation Area
100
125
150
Fig.10 Maximum Drain Current vs
Case Temperature
D= 0.5
0 .2
*Notes:
。
1.ZθJ C (t)=2.5 C/W Max.
2.Duty Factor,D=t1/t2
3.T JM *T C =PDM * ZθJ C (t)
0 .1
0.05
1 0 -1
100
。
Tc [ C ]
0.02
0.01
PD M
t1
t2
single pulse
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t 1 ,Square Wave Pulse Duration[sec]
Fig.11 Transient Thermal Response Curve
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WFD5N60B Product Description
Silicon N-ChannelMOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.12 Gate Test Circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.13 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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WFD5N60B Product Description
Silicon N-ChannelMOSFET
DUT
VD S
IS D
L
Driver
RG
S am e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
D =
(Driver)
Gate Pulse Width
Gate Pulse Period
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFD5N60B Product Description
Silicon N-ChannelMOSFET
DPAK Package Dimension
U n it:m m
E
A
F
D
D1
E1
H
符 号
symbol
M IN
MAX
A
2 . 19
2 . 38
A1
-
0 . 13
b
0 .6 4
c
0 . 46
0 . 61
D
5 . 97
6 . 22
D1
0 . 89
1 . 27
E
6 . 35
6 . 73
E1
5 . 21
5 . 46
0. 89
A1
L2
b
c
e
2 . 28TYP
e
θ
L
F
0 . 46
0 . 61
H
9 . 65
10 . 41
L
1 . 40
1 . 78
L2
0 . 64
1 . 01
θ
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WFD5N60B Product Description
Silicon N-ChannelMOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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