WFF18N50 Product Description
Silicon N-Channel MOSFET
Features
D
�
18A,500V,RDS(on)(Max0.27Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 42nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
G
S
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially wellsuited for AC-DC switching
power supplies, DC-DC powerConverters high voltage H-bridge motor
drive PWM
Absolute Maximum Ratings
Symbol
VDSS
Value
Units
Drain Source Voltage
Parameter
500
V
Continuous Drain Current(@Tc=25℃)
18*
A
Continuous Drain Current(@Tc=100℃)
12.7*
A
71*
A
±30
V
(Note2)
900
mJ
（note 1）
18
A
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
(Note1)
22.7
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
39
W
0.31
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Value
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
3.2
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
WT-F026-Rev.A1 Jan.2014
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WFF18N50 Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=500V, VGS=0V, TC=25℃
-
-
1
VDS=400V, TC=125℃
-
-
10
500
-
-
V
ID=250µA,Referenced to 25℃
-
0.5
-
V/℃
IDSS
Drain -source breakdown voltage
µA
V(BR)DSS
Breakdown voltage Temperature
ID=250μA, VGS=0V
△BVDSS/△TJ
coefficient
Gate threshold voltage
VGS(th)
VDS = VGS , ID=250μA
3
-
5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=9A
-
0.235
0.27
Ω
Forward Transconductance
gfs
VDS=40V,ID=9A
-
24
-
S
Input capacitance
Ciss
VDS=25V,
-
2300
2918
Reverse transfer capacitance
Crss
VGS=0V,
-
25
40
Output capacitance
Coss
f=1MHz
-
355
453
VDD=250V,
-
165
350
ID=18A
-
52
128
-
85
200
-
100
200
-
42
60
-
12
-
-
22
-
Min
Type
Turn-On rise time
tr
Turn-On delay time
td(on)
Switching time
Turn-Off Fall time
ns
RG=25Ω
tf
pF
(Note4,5)
Turn-Off delay time
td(off)
Total gate charge(gate-source
VDD=400V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=18A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Max
Unit
Continuous drain reverse current
IDR
-
-
-
18
A
Pulse drain reverse current
IDRP
-
-
-
72
A
Forward voltage(diode)
VDSF
IDR=18A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=18A,VGS=0V,
-
460
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
5.4
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=5.2mH IAS=18A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤18A,di/dt≤200A/us,VDD<BVDSS,Starting TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFF18N50 Product Description
Silicon N-Channel MOSFET
102
102
1 5 .0 V
1 0 .0 V
9 .0 V
8 .0 V
7 .0 V
6 .5 V
6 .0 V
Bo tto m 5 .5 V
10
I D Drain Current[A]
I D DrainCurrent[A]
To p
1
125°C
101
-5 5 °C
Note:
1.250µs pulse best
2 . Tc=2 5 °C
2 5 °C
100
100
100
10
1
2
4
6
VD S Drain-Source Voltage[V]
Note:
1.VD S =40V
2.250µs Pulse Test
8
10
12
VG S Gate-Source Voltage[V]
Fig.1 On Region Characteristics
Fig.2 Transfer Characteristics
0 .5
I DR Revers e Drain Curre nt[A]
R DS(on) [Ω]
0 .4
101
0 .3
VG S =10V
0 .2
VG S =20V
0 .1
150°C
25°C
Notes:
1.250µs pulse test
2.VG S =0V
Note:TJ =25°C
0 .0
2
0
4
6
8
10
12
14
16
18
20
100
22
0 .4
I D [A]
Fig.3 On-Resistance Variation vs Drain
Current and Gate Voltage
0 .5
0 .6 0 .7
0 .8 0 .9
1 .0
VS D Source-Drain voltage[V]
1 .2
1 .3
1 .4
Fig.4 Body Diode Forward Voltage
Variation with Source Currentand
Temperature
7000
12
Ciss=Cgs+Cgd(Cds=shorted)
V GS Gate Source Voltage[V]
Coss=Cds+Cgd
Crs s =Cgd
6000
5000
C a p a ci ta n c e [p F ]
1 .1
4000
3000
C is s
C os s
2000
*Notes:
1.VG S =0V
2.f=1MH z
1000
VD S =400V
VD S =250V
VD S =100V
10
8
6
4
2
Crss
0
1 0 -1
0
100
0
101
5
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15
20
25
30
35
40
45
Fig.6 Gate Charge Characteristics
Fig.5 Capacitance Characteristics
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10
Qg Toltal Gate Charge[nC]
VD S ,Drain-Source Voltage[V]
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50
WFF18N50 Product Description
Silicon N-Channel MOSFET
1 .2
3 .0
RDS(on)(Normalized)
BV DS (Normalixed)
2 .5
1 .1
1 .0
0 .9
*Notes:
1.VG S =0V
2.ID=250µA
0 .8
-5 0
0
50
100
150
2 .0
1 .5
1 .0
*Notes:
1.V G S =10V
2.I D =9.0A
0 .5
0 .0
-1 0 0
200
-7 5
-5 0
-2 5
0
TJ [°C]
25
50
75
100
125
150
TJ [°C]
Fig.7 Breakdown Voltage Variation
vs. Temperature
Fig.8 On-Resistance Variation
vs.Temperature
20
Operation in This Area
is lim ited by R DS(on)
2
I D D ra i n C u r r e n t [ A ]
10
I D Drain Current[A]
100us
10
1ms
1
10ms
100ms
15
10
DC
10
0
5
*Note:
1.TC =25。C
。
2.TJ =150 C
3.Single Pulse
10
0
25
-1
10
0
10
1
10
2
10
3
50
75
100
Tc Case Temperature[°C]
125
150
VD S Drain-Source Voltage[V]
Fig.10 Maximum Drain Current vs
Case Temperature
ZθJC (t),Thermal Response
Fig.9 Maximum Safe Operation Area
100
0 .5
0 .2
0 .1
0 .0 5
* N o te：
0 .0 2
1.Zθ J C (t)=3.2°C/W Max.
2.Duty Factor,D=t1/t2
3.T JM-T C=P DM* Z θJ C (t)
1 0 -1
0 .0 1
PD M
Single pulse
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t 1,Square Wave Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
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WFF18N50 Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.12 Gate Test Circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.13 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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WFF18N50 Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
S am e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
D =
(Driver)
Gate Pulse Width
Gate Pulse Period
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFF18N50 Product Description
Silicon N-Channel MOSFET
TO-220F Package Dimension
U n it:m m
E
符 号
Symbol
M IN
M AX
A
4 .5
4 .9
B
-
1 .4 7
b
0 .7
0 .9
c
0 .4 5
0 .6
D
1 5 .6 7
1 6 .0 7
E
9 .9 6
1 0 .3 6
Q
F
L2
D
P
e
L
B
b
C
2.54TYPE
F
2 .3 4
2 .7 4
L
1 2 .5 8
1 3 .3 8
L2
3 .1 3
3 .3 3
ФP
3 .0 8
3 .2 8
Q
3 .2
3 .4
Q1
2 .5 6
2 .9 6
Q1
e
A
e
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WFF18N50 Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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