WFP3205 Product Description
Silicon N-Channel MOSFET
Features
D
�
110A,50V, RDS(on)(Max 8mΩ)@VGS=10V
�
Ultra-low Gate charge(Typical133nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
G
S
General Description
This Power MOSFET is produced using Winsemi’s advanced planar
stripe,DMOS technology. This latest technology has beenespecially designed
to minimize on-state resistance ,have a lowgate charge with superior
switching performance ,and ruggedavalanche characteristics.This Power
MOSFET is well suited for synchronous DC-DC Converters and power
Management inportable and battery operated products.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
50
V
Continuous Drain Current(@Tc=25℃)
110
A
Continuous Drain Current(@Tc=100℃)
80
A
390
A
±20
V
ID
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
（note 2）
2970
mJ
Avalanche Current
（note 1）
60
A
IAR
(Note1)
EAR
Repetitive Avalanche Energy
(Note1)
20
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
5.0
V/ ns
Total Power Dissipation(@Tc=25℃)
200
W
Derating Factor above 25℃
1.3
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Value
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.63
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62
℃/W
WT-F044-Rev.A1 Sep.2013
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WFP3205 Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Min
Type
Max
Unit
-
-
±100
nA
±30
-
-
V
VDS=50V,V GS=0V
-
-
10
µA
VDS=40V, TC=125℃
-
-
10
µA
V(BR)DSS
ID=250 µA,VGS=0V
50
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=60A
-
-
8.0
mΩ
Forward Transconductance
gfs
VDS=25V,ID=60A
44
-
-
S
Input capacitance
Ciss
VDS=25V,
-
3100
-
Reverse transfer capacitance
Crss
VGS=0V,
-
199
-
Output capacitance
Coss
f=1MHz
-
749
-
VDD=28V,
-
120
-
ID=60A
-
16
-
RG=25Ω
-
70
-
-
55
-
-
-
115
-
-
23
-
-
48
Gate leakage current
IGSS
Gate-source breakdown voltage
V(BR)GSS
Drain cut -off current
Test Condition
VGS = ±30 V, VDS = 0 V
IG=±10 µA,VDS=0V
IDSS
Drain -source breakdown voltage
Turn-On rise time
tr
Turn-On delay time
td(on)
Switching time
Turn-Off Fall time
tf
Turn-Off delay time
Total gate charge(gate-source
ns
(Note4,5)
td(off)
pF
VDS=44V,
Qg
plus gate-drain)
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
VGS=10V,
nC
ID=60A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
110
A
Pulse drain reverse current
IDRP
-
-
-
390
A
Forward voltage(diode)
VDSF
IDR=60A,VGS=0V
-
-
1.5
V
Reverse recovery time
trr
IDR=60A,VGS=0V,
-
425
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
4.31
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=0.15mH IAS=60A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤60A,di/dt≤300A/us,VDD<BVDSS, TJ≤150℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFP3205 Product Description
Silicon N-Channel MOSFET
1000
1000
VG S
15V
10V
9V
8V
7V
6 .5 V
6V
5 .5 V
B ot t om 5 V
To p
100
175°C
I D [A]
I D [A]
100
25°C
10
10
Notes:
1.250µs pulse test
2.V D S =40V
No te s:
1 .2 5 0 µs p u lse te st
2 .Tc=2 5 °C
1
0 .1
1
1
10
100
4
6
8
V D S [V]
12
10
VG S [V]
Fig.1 On Region Characteristics
Fig.2 Transfer Characteristics
1000
Ciss=Cgs+Cgd(Cds=shorted)
5Χ 10 3
Coss=Cds+Cgd
Crss=Cgd
4Χ 10 3
Capacitance [pF]
I DR[A]
100
1 5 0 °C
10
2 5 °C
1
N o te s:
1 .2 5 0 µ s p u lse te st
2 .V G S =0 V
C is s
3Χ 10 3
Co s s
2Χ 10 3
1Χ 10 3
Cr s s
0
0 .1
0 .5
1 .0
1 .5
2 .0
2 .5
3 .0
100
101
V D S Drain-Source Voltage[V]
V S D [V]
Fig.3 Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Fig4.Capacitance Characteristics
12
103
VD S =44V
VD S =28V
10µs
VD S =11V
8
I D Dra in C urre nt[A ]
V G S Ga te Sou rc e Voltag e[ V]
10
6
4
102
1 0 0 µs
1ms
Operation in This Area
is Limited by R DS(on)
10ms
101
Note:
1. Tc = 25°C
2.Tc = 150°C
3.Single pulse
2
0
0
10
20
30
40
50
60
100
100
70
VD S
Qg Toltal Gate Charge[nC]
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Fig.6 Maximum Safe Operation Area
Fig.5 Gate Charge Characteristics
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101
Drain-Source voltage[V]
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WFP3205 Product Description
Silicon N-Channel MOSFET
120
ID Drain Current[A]
100
80
60
40
20
0
25
50
75
100
125
150
Tc C a s e Te m p e ra tu re [°C ]
Fig.7 Maximum Drain Current vs
Case temperature
Zθ JC (t),Thermal Response
1
D = 0 .5
0 .1
0 .2
*N o te：
。
1.ZθJ C (t)=0.74 C/W Max.
2.Duty Factor,D=t1 /t2
3.TJM -TC =PDM* ZθJ C (t)
0 .1
0 .0 5
0 .0 2
PD M
0 .0 1
0 .0 1
t1
Single pulse
1E -5
1E -4
1E -3
t2
0 .0 1
0 .1
1
10
t1 Square Wave Pulse Duration[sec]
Fig.8 Transient thermal Response Curve
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WFP3205 Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.9 Gate Test circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.10 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.11 Unclamped Inductive Switching Test Circuit & Waveform
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WFP3205 Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
S am e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
D =
(Driver)
Gate Pulse Width
Gate Pulse Period
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.12 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFP3205 Product Description
Silicon N-Channel MOSFET
TO-220 Package Dimension
U n It:m m
E
A
7
Q
F
D2
D
P
L
L2
B
符 号
M IN
MAX
A
4 .3 0
4 .7 0
B
1 .1 0
1 .4 0
b
0 .7 0
0 .9 5
c
0 .4 0
0 .6 5
d
1 5 .2
1 6 .2
D2
9 .0 0
9 .4 0
E
9 .7 0
1 0 .1 0
e
2 .3 9
2 .6 9
F
1 .2 5
1 .4 0
L
1 2 .6 0
1 3 .6 0
L2
2 .8 0
3 .2 0
Q
2 .6 0
3 .0 0
Q1
2 .2 0
2 .6 0
P
3 .5 0
3 .8 0
b
c
Q1
e
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WFP3205 Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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