F20N60S
WF
WFF20N60S
Silicon N-Channel MOSFET
D
Features
�
Ultra low Rdson
�
Ultra-low Gate charge(Typical 65nC)
�
100% UIS Tested
�
RoHS compliant
G
S
General Description
Winsemi Power MOSFET is fabricated using advanced super
junction technology.The resulting device has extremely low on
resistance,making it especially suitable for applic ations which
require superior power density and outstanding efficienc y.
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Value
Units
600
V
20
(@Tc=100℃)
13
A
I DM
Drain Current Pulsed1)
60
A
VGS
Gate to Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy2)
700
mJ
I AR
Pulse Avalanche Current1)
20
A
20.5
mJ
34
W
EAR
Single
Repetitive Avalanche Energy
1)
Total Power Dissipation(@Tc=25℃)
PD
0.28
W/℃
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
Continuous diode forward current
20
A
Diode pulse current
60
A
IS
IS ,pulse
-Derate above 25℃
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
3.6
℃/W
R QJA
Thermal Resistance , Junction -to -Ambient
-
-
80
℃/W
WT-F034-Rev.A1 Nov.2013
Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved.
F20
N60S
WF
WFF20
F20N
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current
I GSS
VGS =±30V,VDS =0V
-
-
±100
nA
Drain cut -off current
I DSS
VDS =600V,V GS =0V
-
-
1
µA
V(BR)DSS
I D=250µA,VGS =0V
600
-
-
V
VGS(th)
VDS =VGS,I D=250uA
2.5
-
4.5
V
T J=25℃
-
0.13
0.15
Ω
T J=150℃
-
0.39
-
Drain -source breakdownvoltage
Gate threshold voltage
VGS =10V,ID=10A
Drain -source ON resistance
R DS(ON)
Gate resistance
RG
F=1MHz,open drain
-
1.8
Input capacitance
C iss
VDS =25V,
-
2100
Reverse transfer capacitance
C rss
VGS =0V,
-
17
Output capacitance
C oss
f=1MHz
-
1700
Turn-on delay time
td(on)
-
25
-
Turn-off delay time
pF
tr
VDD = 380V, I D = 10A R G
-
21
-
td(off)
= 4.7Ω, VG S=10V
-
60
-
-
4
-
-
65
-
Rise time
Fall time
tf
Ω
Total gate charge(gate-source
Qg
plus gate-drain)
VDS =480V,
nC
Gate-source charge
Qgs
VGS =0 to 10V,
-
12
-
Gate-drain("miller") Charge
Qgd
I D=10A
-
31
-
-
5.7
-
Gate plateau voltage
Vplateau
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Body Diode Voltage
VSD
I SD=10A,VGS =0V
-
-
1.4
V
Pulse Diode Forward Current
trr
-
520
-
-
5.7
-
-
19
-
VR=50V,IF=20A,dIF/dt=
Reverse recovery time
Qrr
100A/µs
Peak reverse recovery current
Irrm
Notes:
1.Repetitive Rating:Pulse width limited by maximum junction temperature
2.IAS=7A,V DD=60V ,RG=25 Ω,Starting T J=25 ℃
2/6
Steady, keep you advance
F20
N60S
WF
WFF20
F20N
Fig.1 On-Region Characteristics
Fig.3 On-Resistance Variation vs
Drain Current
Fig.5 Breakdown Voltage vs. Temperature
Fig.2 Transfer Characteristics
Fig.4 Threshold Voltage vs. Temperature
Fig.6 On-Resistance vs. Temperature
3/6
Steady, keep you advance
F20
N60S
WF
WFF20
F20N
Fig.7 Capacitance Characteristics
Fig.8 Gate Charge Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Power Dissipation vs. Temperature
Fig.11 Transient Thermal Response Curve
4/6
Steady, keep you advance
F20
N60S
WF
WFF20
F20N
Fig.11 Gate Charge Test Circuit & Waveform
Fig.12 Switching Test Circuit & Waveforms
Fig.13 Unclamped Inductive Switching Test Circuit & Waveforms
5/6
Steady, keep you advance
F20
N60S
WF
WFF20
F20N
220
F Package Dimension
TOTO-220
220F
Unit:mm
6/6
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