Silicon N-Channel MOSFET

9N20
WFP
FP9
Silic
on N-C
hannel MOS
FET
Silico
N-Ch
MOSF
Features
■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 43nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
G
D
suited for low voltage applications such as automotive, high
TO220
S
efficiency switching for DC/DC converters, and DC motor control.
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
Units
200
V
Continuous Drain Current(@Tc=25℃)
9
A
Continuous Drain Current(@Tc=100℃)
5.7
A
36
A
Drain Source Voltage
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
160
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
7.2
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
72
W
0.57
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
Junction and Storage Temperature
TL
Maximum lead Temperature for soldering purposes
Thermal Characteristics
Symbol
Parameter
Min
Value
Typ
Max
1.74
℃/W
Units
RQJC
Thermal Resistance, Junction-to-Case
-
-
RQCS
Thermal Resistance, Case to Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
℃/W
Rev, C Dec.2009
[email protected] Microelectronics Co., Ltd., All right reserved.
T03-1
9N20
WFP
FP9
al Charac
Electric
Electrica
Charactterist
eristiics (Tc = 25
25°°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
-
-
±100
nA
Gate−source breakdown voltage
V(BR)GSS
IG = ±10 μA, VDS = 0 V
±30
-
-
V
Drain cut−off current
IDSS
VDS = 200 V, VGS = 0 V
-
-
10
μA
Drain−source breakdown voltage
V(BR)DSS
ID = 250 μA, VGS = 0 V
200
-
-
V
ID=250μA, Referenced to 25℃
-
0.2
-
V/℃
ΔBVDSS/
Break Voltage Temperature
Coefficient
ΔTJ
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
2
-
4
V
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 5.4A
-
-
0.4
Ω
Forward Transconductance
gfs
VDS = 50 V, ID =5.4A
3.8
-
-
S
Input capacitance
Ciss
VDS = 25 V,
-
800
-
Reverse transfer capacitance
Crss
VGS = 0 V,
-
76
-
Output capacitance
Coss
f = 1 MHz
-
240
-
pF
Rise time
tr
VDD =100 V,
-
9.4
-
Turn−on time
ton
ID = 5.9 A
-
28
-
Fall time
tf
RG=12 Ω
-
39
-
Turn−off time
toff
(Note4,5)
-
20
-
-
43
-
-
7
-
-
23
-
Test Condition
Min
Type
Max
Unit
Switching time
ns
Total gate charge (gate−source
plus gate−drain)
VDD = 160 V,
Qg
VGS = 10 V,
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
ID = 5.9 A
(Note4,5)
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Continuous drain reverse current
IDR
-
-
-
9
A
Pulse drain reverse current
IDRP
-
-
-
36
A
Forward voltage (diode)
VDSF
IDR = 9 A, VGS = 0 V
-
1.4
2.0
V
Reverse recovery time
trr
IDR = 5.9A, VGS = 0 V,
-
170
340
ns
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
1.1
2.2
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
.
Steady, keep you advance
9N20
WFP
FP9
Fig. 1 On-State Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance Variation vs
Drain Current
Fig.4 Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Fig.5 On-Resistance Variation vs
Junction Temperature
Fig.6 Gate Charge Characteristics
3/7
.
Steady, keep you advance
9N20
WFP
FP9
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response Curve
4/7
.
Steady, keep you advance
9N20
WFP
FP9
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
.
Steady, keep you advance
9N20
WFP
FP9
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
.
Steady, keep you advance
9N20
WFP
FP9
220 Pa
ckage Dimension
TOO-220
Pac
Unit: mm
7/7
.
Steady, keep you advance