SPN4992 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4992 is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN4992 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS High Frequency Small Power Switching for MB/NB/VGA Network DC/DC Power System Load Switch FEATURES 100V/2A, RDS(ON)= 180mΩ@VGS= 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PIN CONFIGURATION SOP-8 PART MARKING 2012/09/05 V.1 Page 1 SPN4992 Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 5 D2 Gate 2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1 Package Part Marking ORDERING INFORMATION Part Number SPN4992S8RGB SOP-8 ※ SPN4992S8RGB : 13”Tape Reel ; Pb – Free ; Halogen - Free SPN4992 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 100 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ ID 2.8 2.2 A IDM 10 A PD 2.8 W TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 ℃/W Pulsed Drain Current Power Dissipation TA=25℃ Operating Junction Temperature 2012/09/05 V.1 Page 2 SPN4992 Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. V(BR)DSS VGS=0V,ID=250uA 100 Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 3.0 VDS=0V,VGS=±20V VDS=80V,VGS=0V VDS=80V,VGS=0V TJ=125℃ VDS≥5V,VGS =10V RDS(on) VGS= 10V,ID=2A gfs VDS=5V,ID=5A VSD 1 ±100 25 250 2.2 V nA uA A 0.160 5.6 IS=1A,VGS =0V 0.180 Ω S 1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss 10 VDS=50V,VGS=10V ID= 2A 4.5 430 VDS=15V,VGS=0V f=1MHz Coss Reverse Transfer Capacitance Crss 35 td(on) 6.5 Turn-Off Time 2012/09/05 V.1 tr td(off) tf nC 2.5 Output Capacitance Turn-On Time 16 VDD=50V, ID=2A, VGEN=10V, RG=3.3Ω pF 56 10 nS 13 3.4 Page 3 SPN4992 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2012/09/05 V.1 Page 4 SPN4992 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2012/09/05 V.1 Page 5 SPN4992 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2012/09/05 V.1 Page 6 SPN4992 Dual N-Channel Enhancement Mode MOSFET SOP-8 PACKAGE OUTLINE 2012/09/05 V.1 Page 7 SPN4992 Dual N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2012\ SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2012/09/05 V.1 Page 8