UMH7N / IMH7A Transistors General purpose (dual digital transistors) UMH7N / IMH7A !External dimensions (Units : mm) (1) 1.25 !Absolute maximum ratings (Ta=25°C) Tj Junction temperature Storage temperature Tstg mW ˚C 0.1Min. ∗1 ∗2 ˚C (5) 3000 3000 0.3to0.6 ROHM : SMT6 EIAJ : SC-74 !Circuit diagram UMH7N IMH7A R1 R1 R1 R1 !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Parameter BVCBO BVCEO − − − − − − − ICBO 50 50 5 − 0.5 V V V µA IEBO − − 0.5 µA VEB=4V DC current transfer ratio Collector-emitter saturation voltage Input resistance hFE 100 600 0.3 − V VCE / IC=5V / 1mA 6.11 kΩ BVEBO VCE(sat) − 250 − R1 3.29 4.7 Conditions IC=50µA IC=1mA IE=50µA VCB=50V IC / IB=5mA / 0.25mA − 0.8 TR SMT6 H7 T108 0to0.1 IMH7A UMT6 H7 2.0 2.8 0.15 UMH7N (3) (4) 1.6 !Package, marking, and Packaging specifications Part No. 0.9 IMH7A 120mW per element must not be exceeded. 200mW per element must not be exceeded. Package Marking Code Basic ordering unit (pieces) Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 0.3 ∗1 ∗2 150 (TOTAL) 300 (TOTAL) 150 −55∼+150 0.7 V mA 0.95 0.95 1.9 2.9 5 100 1.1 V V VEBO IC (1) Unit 50 50 (2) Limits VCBO VCEO 0to0.1 Symbol (6) Parameter 0.15 2.1 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current UMH7N Collector power dissipation FMG13, IMH7A Pc 1.3 (3) (2) (4) (5) (6) 0.2 0.65 UMH7N 0.65 !Features 1) Includes two DTC143T transistors in a single UMT package. Each lead has same dimensions