ROHM 2SD2662

2SD2662
Transistors
Low frequency amplifier
2SD2662
zExternal dimensions (Unit : mm)
zApplication
Low frequency amplifier
Driver
4.0
zFeatures
1) A collector current is large.
2) VCE(sat) ≦ 350mV
At IC = 1A / IB = 50mA
2.5
0.4
1.5
1.0
0.5
(1)
4.5
3.0
0.5
1.6
(2)
0.4
1.5
0.4
1.5
(3)
(1)Base
(2)Collector
(3)Emitter
ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89
Abbreviated symbol : FZ
zPackaging specifications
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
30
30
6
1.5
3
500
2 ∗2
150
−55 to +150
Unit
V
V
V
A
A∗1
mW
W
°C
°C
Package
Type
Taping
Code
T100
Basic ordering unit (pieces)
1000
2SD2662
∗1 Single pulse, PW=1ms
∗2 Mounted on a 40×40× t 0.7mm Ceramic substrate
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut off current
Emitter cut off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
30
30
6
−
−
−
270
−
−
Typ.
−
−
−
−
−
160
−
330
11
Max.
−
−
−
100
100
350
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=30V
VEB=6V
IC=1A, IB=50mA
VCE=2V, IC=100mA ∗
VCE=2V, IE=−100mA, f=100MHz ∗
VCB=10V, IE=0A, f=1MHz
∗ Pulsed
Rev.A
1/2
2SD2662
Transistors
DC CURRENT GAIN : hFE
Ta=25°C
Ta=−40°C
100
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. collector current
VCE=2V
Pulsed
Ta=100°C
0.1
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR CURRENT : IC (A)
1
Ta=25°C
Ta=−40°C
0.01
0.001
0
0.5
1
1.5
=20/1
IC/IB=20
Pulsed
Ta=−40°C
Ta=25°C
Ta=100°C
VBE(sat)
1
0.1
Ta=100°C
VCE(sat)
Ta=25°C
Ta=−40°C
0.01
0.001
0.01
0.1
1
1
Ta=25°C
Pulsed
0.1
IC/IB=50/1
IC/IB=20/1
IC/IB=10/1
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current
1000
1000
Ta=25°C
VCE=2V
f=100MHz
100
Ta=25°C
VCE=5V
f=100MHz
tstg
100
tf
tdon
10
tr
0.1
1
EMITTER CURRENT : IE (A)
Fig.4 Grounded emitter propagation
characteristics
10
COLLECTOR CURRENT : IC (A)
10
0.01
BASE TO EMITTER CURRENT : VBE (V)
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=2V
Pulsed
Ta=100°C
SWITCHING TIME : (ns)
1000
BASE SATURATION VOLTAGE : VBE (sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
zElectrical characteristic curves
Fig.5 Gain bandwidth product
vs. emitter current
10
1
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Switching time
1000
Ta=25°C
IC=0A
f=1MHz
Cib
100
Cob
10
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/2
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1