To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz • OIP3 = 35.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz • Maximum stable power gain: MSG =11.5 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz • SiGe HBT technology (UHS2) : fT = 10.0 GHz • This product is improvement of ESD of NESG2xxx series. • 3-pin power minimold (34 PKG) ORDERING INFORMATION Part Number NESG240034 NESG240034-T1 Order Number NESG240034-A Package Quantity 3-pin power minimold 25 pcs (34 PKG) (Pb-Free) (Non reel) NESG240034-T1-A 1 kpcs/reel Supplying Form • Magazine case • 12 mm wide embossed taping • Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 25 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10769EJ02V0DS (2nd edition) Date Published November 2009 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2009 NESG240034 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 5.5 V Collector to Emitter Voltage VCES 13 V Collector to Emitter Voltage VCEO 5.5 V Note 1 IB 36 mA Collector Current IC 400 mA 886 mW Base Current <R> Total Power Dissipation Ptot Note 2 Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Notes 1. Depend on the ESD protect device. 2. Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB THERMAL RESISTANCE (TA = +25°C) Parameter <R> Termal Resistance from Junction to Note Ambient Symbol Ratings Unit Rthj-a 141 °C/W Note Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter <R> Collector Current 2 Symbol MIN. TYP. MAX. Unit IC − 40 − mA Data Sheet PU10769EJ02V0DS NESG240034 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA Emitter Cut-off Current IEBO VEB = 0.4 V, IC = 0 mA − − 100 nA VCE = 5 V, IC = 15 mA 140 180 260 − VCE = 5 V, IC = 40 mA, f = 1 GHz − 10.0 − GHz ⏐S21e⏐ VCE = 5 V, IC = 40 mA, f = 1 GHz 8.5 10.5 − dB Noise Figure (1) NF1 VCE = 5 V, IC = 15 mA, f = 1 GHz, ZS = ZSopt, ZL = 50Ω − 0.7 1.1 dB Noise Figure (2) NF2 VCE = 5 V, IC = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 0.9 − dB Associated Gain (1) Ga1 VCE = 5 V, IC = 15 mA, f = 1 GHz, ZS = ZSopt, ZL = 50Ω 8.0 10.0 − dB Associated Gain (2) Ga2 VCE = 5 V, IC = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 11.0 − dB VCB = 5 V, IE = 0 mA, f = 1 MHz − 1.1 1.3 pF VCE = 5 V, IC = 40 mA, f = 1 GHz 9.5 11.5 − dB VCE = 5 V, IC (set) = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 24 − dBm VCE = 5 V, IC (set) = 40 mA, f = 1 GHz, − 35.5 − dBm DC Current Gain hFE Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Reverse Transfer Capacitance Maximum Stable Power Gain Cre Note 2 MSG Note 3 Gain 1 dB Compression Output Power PO (1 dB) Output 3rd Order Intercept Point OIP3 Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded. 3. MSG = S21 S12 hFE CLASSIFICATION Rank FB Marking SR hFE Value 140 to 260 Data Sheet PU10769EJ02V0DS 3 NESG240034 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Total Power Dissipation Ptot (mW) 1 000 Reverse Transfer Capacitance Cre (pF) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3.8 cm × 9.0 cm × 0.8 mm (t), FR–4 886 500 0 0 25 50 75 100 125 150 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0 3 4 5 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 5 V 10 Collector Current IC (mA) Collector Current IC (mA) 2 Collector to Base Voltage VCB (V) VCE = 3 V 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.8 0.7 0.9 1.0 10 1 0.1 0.01 0.001 0.0001 0.4 Base to Emitter Voltage VBE (V) 400 4.0 mA 3.6 mA 3.2 mA 2.8 mA 2.4 mA 2.0 mA 300 1.6 mA 200 1.2 mA 0.8 mA 100 IB = 0.4 mA 0 0 1 2 3 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 4 5 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. 4 1 Ambient Temperature TA (°C) 100 Collector Current IC (mA) <R> Data Sheet PU10769EJ02V0DS 1.0 NESG240034 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 3 V VCE = 5V DC Current Gain hFE DC Current Gain hFE 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT 100 10 1 0.001 0.01 0.1 100 10 1 0.001 1 0.01 Collector Current IC (A) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 20 VCE = 3 V, f = 1 GHz Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 1 Collector Current IC (A) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 15 10 5 0 1 0.1 10 100 VCE = 5 V, f = 1 GHz 15 10 5 0 1 Collector Current IC (mA) 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10769EJ02V0DS 5 NESG240034 35 VCE = 3 V, IC = 40 mA 30 25 MSG MAG 20 MAG 15 MSG 2 |S21e| 10 5 0 0.1 1 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 5 V, IC = 40 mA 30 25 MSG MAG 20 MSG MAG 15 |S21e|2 10 5 0 0.1 10 1 Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 VCE = 3 V, f = 1 GHz 15 MSG MAG 10 |S21e|2 5 0 1 10 100 20 VCE = 5 V, f = 1 GHz MSG MAG 15 10 |S21e|2 5 0 –5 1 10 Collector Current IC (mA) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 6 35 Frequency f (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Data Sheet PU10769EJ02V0DS 100 NESG240034 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 3 14 12 Ga 10 2 8 6 1 4 NF 2 0 1 0 100 10 40 VCE = 5 V, f1 = 1.000 GHz, f2 = 1.001 GHz 30 20 10 0 1 10 100 Collector Current IC (mA) OUTPUT POWER, LINEAR GAIN, COLLECTOR CURRENT vs. INPUT POWER EACH OUTPUT POWER, IM3 vs. EACH INPUT POWER 25 400 Pout 350 300 20 250 15 GL 10 200 5 150 IC 0 100 50 –5 –10 –20 –10 0 10 0 30 20 Collector Current IC (mA) 30 450 VCE = 5 V, IC (set) = 40 mA, f = 1 GHz Each Output Power Pout (each) (dBm) 3rd Order Intermodulation Distortion IM3 (dB) Collector Current IC (mA) 35 Output Power Pout (dBm) Linear Gain GL (dB) Output 3rd Order Intercept Point OIP3 (dBm) 16 VCE = 5 V, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω Associated Gain Ga (dB) Noise Figure NF (dB) 4 OUTPUT 3RD ORDER INTERCEPT POINT vs. COLLECTOR CURRENT 40 30 20 10 0 Pout –10 –20 –30 –40 –50 –60 –70 –80 –20 IM3 –10 VCE = 5 V, IC (set) = 40 mA, f1 = 1.000 GHz, f2 = 1.001 GHz 0 10 20 30 Each Input Power Pin (each) (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ Data Sheet PU10769EJ02V0DS 7 NESG240034 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm) 4.5±0.1 1.5±0.1 0.8 MIN. 2 1 3 0.42±0.06 4.0±0.25 2.5±0.1 1.6±0.2 0.42±0.06 0.47±0.06 1.5 3.0 PIN CONNECTIONS 1. Emitter 2. Collector 3. Base 8 Data Sheet PU10769EJ02V0DS 0.41+0.03 –0.06 NESG240034 • The information in this document is current as of November, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E0904E