Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 EMH3 / UMH3N / IMH3A Transistors General purpose (dual digital transistors) EMH3 / UMH3N / IMH3A zExternal dimensions (Units : mm) (3) 0.22 (4) (5) (6) 0.5 0.5 1.0 1.6 EMH3 (2) 1.2 1.6 (1) 0.5 0.13 zFeatures 1) Two DTAK13Ts chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. Each lead has same dimensions Abbreviated symbol : H3 zStructure Epitaxial planar type NPN silicon transistor ROHM : EMT6 1.3 0.65 (1) 1.25 2.0 (3) (2) (4) (6) (5) 0.2 The following characteristics apply to both DTr1 and DTr2. 0.65 UMH3N 0.1Min. EMH3 / UMH3N (3) (2) R1 IMH3A (1) (4) (5) R1 DTr1 0.9 0to0.1 zEquivalent circuit 0.7 0.15 2.1 Each lead has same dimensions (6) ROHM : UMT6 EIAJ : SC-88 DTr1 Abbreviated symbol : H3 DTr2 IMH3A R1 (2) R1=4.7kΩ (1) (3) 0.95 0.95 1.9 2.9 (1) (4) R1=4.7kΩ (3) (2) (6) (6) R1 (5) (5) (4) 0.3 DTr2 1.6 Type Code T2R TN T110 Basic ordering unit (pieces) 8000 3000 3000 − − EMH3 UMH3N − IMH3A − 0.8 0.15 0.3to0.6 Taping 0to0.1 Package 1.1 2.8 zPackaging specifications Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : H3 − − For the very latest product data and news visit angliac.com Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 EMH3 / UMH3N / IMH3A Transistors zAbsolute maximum ratings (Ta = 25°C) Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V 100 mA Parameter Collector current Collector power dissipation IC EMH3,UMH3N 150 (TOTAL) Pc IMH3A ∗1 mW ∗2 300 (TOTAL) Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 50 − − V Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA Collector cutoff current ICBO − − 0.5 µA VCB=50V Emitter cutoff current IEBO − − 0.5 µA VEB=4V Parameter Collector-emitter saturation voltage Conditions IC=50µA VCE(sat) − − 0.3 V IC/IB=5mA/0.25mA hFE 100 250 600 − VCE=5V, IC=1mA DC current transfer ratio Transition frequency fT − 250 − MHz Input resistance R1 3.29 4.7 6.11 kΩ VCE=10mA, IE=−5mA, f=100MHz − ∗ Transition frequency of the device 1k VCE=5V DC CURRENT GAIN : hFE 500 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves 1 lC/lB=20 500m 200m 100m Ta=100°C 25°C −40°C 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current For the very latest product data and news visit angliac.com ∗