DTC125TUA / DTC125TKA / DTC125TSA Transistors Digital transistor (built-in resistor) DTC125TUA / DTC125TKA / DTC125TSA 2.0 1.3 0.9 (1) (2) (3) 0.3 1.25 0.2 2.1 0 to 0.1 0.1 to 0.4 Each lead has same dimensions (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 (2) 0.95 0.95 1.9 2.9 (3) 0.4 zCircuit schematic (1) DTC125TKA 1.6 C B 0.65 0.65 DTC125TUA 0.7 zExternal dimensions (Unit : mm) 0.15 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. 2.8 0 to 0.1 0.8 0.15 E 0.3 to 0.6 E : Emitter C : Collector B : Base 1.1 R1 Each lead has same dimensions (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 DTC125TSA 2 (15Min.) 3Min. 3 4 0.45 2.5 0.5 0.45 5 (1) (2) (3) Taping specifications (1) Emitter (2) Collector (3) Base ROHM : SPT EIAJ : SC-72 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation DTC125TUA / DTC125TKA DTC125TSA Junction temperature Storage temperature Symbol Limits Unit VCBO VCEO 50 50 V V VEBO IC 5 100 V mA Pc Tj Tstg 200 300 150 −55 to +150 mW °C °C Rev.A 1/2 DTC125TUA / DTC125TKA / DTC125TSA Transistors zPackage, marking, and packaging specifications DTC125TUA DTC125TKA DTC125TSA Package Marking Part No. UMT3 0A SMT3 0A SPT − Packaging code Basic ordering unit (pieces) T106 3000 T146 3000 TP 5000 zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol Min. Typ. Max. Unit BVCBO BVCEO 50 50 5 − − − − V V IC=50µA IC=1mA − V µA IE=50µA VCB=50V BVEBO ICBO Collector cutoff current − − hFE − − 100 0.5 0.5 0.3 250 600 µA V − R1 fT 140 − 200 250 260 − kΩ MHz IEBO Emitter cutoff current VCE(sat) Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗Transition frequency of the device. − − − Conditions VEB=4V IC=0.5mA , IB=0.05mA IC=1mA , VCE=5V − VCE=10V , IE= −5mA , f=100MHz ∗ 1k VCE=5V COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves Ta=100°C DC CURRENT GAIN : hFE 500 200 100 Ta= −40°C Ta=25°C 50 20 10 5 2 1 10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Collector current 10m 1 IC/IB=10/1 500m 200m 100m Ta=100°C Ta=25°C 50m 20m Ta= −40°C 10m 5m 2m 1m 10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m COLLECTOR CURRENT : IC (A) Fig.2 Collector-Emitter saturation voltage vs. Collector current Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0