ROHM 1SR139-600

Rectifier diode
1SR139-600
Dimensions (Unit : mm)
Applications
General rectification
6
Features
1) Cylindrical mold. (MSR)
2) High reliability.
Construction
Silicon diffused junction
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Absolute peak reverse voltage
VRMS
Reverse voltage (repetitive peak)
VR
Average rectified forward current
Io
Forward current surge peak (60Hz / 1cyc)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
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IR
Limits
Unit
V
V
A
A
750
600
1
40
150
-40 to +150
C
C
Min.
-
Typ.
-
Max.
1.1
Unit
V
-
-
10
A
1/3
Conditions
IF=1.0A
VR=600V
2010.04 - Rev.E
1SR139-600
Data Sheet
Electrical characteristics curves
1
100
100000
Ta=150C
Ta=25C
Ta=150C
Ta=-25C
0.01
100
200
400
600
800
1000
Ta=25C
10
0.001
0
Ta=75C
1000
1
1
1200
0
100
200
300
400
500
0
600
930
920
AVE:926.8mV
910
20
25
30
200
150
100
AVE:30.86nA
50
Ta=25C
f=1MHz
VR=0V
n=10pcs
45
Ta=25C
VR=600V
n=30pcs
250
40
35
30
25
20
15
AVE:18.1pF
10
5
0
900
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
2
RESERVE RECOVERY TIME:trr(us)
1cyc
Ifsm
100
8.3ms
50
AVE:64.0A
1.8
1.7
100
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1.9
AVE:1.869us
PEAK SURGE
FORWARD CURRENT:I FSM(A)
150
1.6
1.5
1.4
1.3
1.2
1
100
0
100
100
2
IM=1mA
DC
Rth(j-a)
time(ms)
td=300us
100
Rth(j-l)
Rth(j-c)
10
1
0.001
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
50
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
1000
t
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©2010 ROHM Co., Ltd. All rights reserved.
50
1
IF=0.5A
Ifsm
8.3ms
1cyc
0
10000
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
8.3ms
trr DISPERSION MAP
IFSM DISRESION MAP
1
Ifsm
1.1
0
PEAK SURGE
FORWARD CURRENT:I FSM(A)
15
50
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
Ta=25C
IF=1A
n=30pcs
10
REVERSE VOLTAGE:V R(V)
VR-Ct CHARACTERISTICS
300
940
5
REVERSE VOLTAGE : V R(V)
VR-IR CHARACTERISTICS
950
FORWARD VOLTAGE:V F(mV)
10
Ta=-25C
FORWARD VOLTAGE : V F(mV)
VF-IF CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:I FSM(A)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0.1
Ta=125C
10000
Ta=125C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:I F(A)
Ta=75C
D=1/2
Sin(θ=180)
1
0
0
1
2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2010.04 - Rev.E
1SR139-600
3
Sin(θ=180)
D=1/2
0.01
DC
3
2.5
0A
Io
0V
VR
t
2
T
DC
D=t/T
VR=300V
Tj=150C
D=1/2
1.5
1
Sin(θ=180)
0.5
0
0
0
100
200
300
400
500
REVERSE VOLTAGE:V R(V)
VR-PR CHARACTERISTICS
600
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
0.02
Data Sheet
0A
0V
2.5
2
Io
t
DC
1.5
VR
T
D=t/T
VR=300V
Tj=150C
D=1/2
1
Sin(θ=180)
0.5
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve"(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curve"(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
25
20
15
10
AVE:10.6kV
AVE:3.70kV
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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©2010 ROHM Co., Ltd. All rights reserved.
3/3
2010.04 - Rev.E
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R1010A