Formosa MS N-Channel SMD MOSFET 2N7002DW List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2~3 Rating and characteristic curves........................................................ 4~5 Pinning information........................................................................... 6 Marking........................................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing.................................................................................... 8 Suggested thermal profiles for soldering processes............................. 8 High reliability test capabilities........................................................... 9 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date Revision Page. DS-231121 2009/02/10 2010/03/10 B 9 Formosa MS N-Channel SMD MOSFET 2N7002DW 60V N-Channel Enhancement Mode MOSFET Package outline SOT-363 Features .087(2.20) .079(2.00) • R DS(ON), V GS@10V, I DS@500mA=3.5 Ω (typ.) • R DS(ON), V [email protected], I DS@300mA=4.0 Ω (typ.) • Advanced trench process technology. • High density cell design for ultra low on-resistance. • Specially designed for battery operated system, • • .087(2.20) .079(2.00) .018(0.46) .010(0.26) .053(1.35) .045(1.15) solid-state relays drivers, relays, displays, lamps, solenoids, memories, etc. In compliance with EU RoHS 2002/95/EC directives. Suffix "-H" indicates Halogen-free part, ex. 2N7002DW-H. .026(0.65)Typ. .010(0.25) .003(0.08) .014(0.35) .006(0.15) .004(0.10) Max. Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-363 • Terminals : Solder plated, solderable per .043(1.10) .035(0.90) .016(0.40) .012(0.30) Dimensions in inches and (millimeters) MIL-STD-750, Method 2026 • Polarity : See Diagram • Mounting Position : Any • Weight : Approximated 0.006 gram M aximum ratings (AT T A D G S S G D =25 oC unless otherwise noted) PARAMETER Symbol Drain-source voltage Drain to current-continue MIN. TYP. MAX. UNIT V DSS 60 V ID ±300 I DM ±1000 V GS ±20 V GSS ±40 mA -pulsed Gate to source voltage-continue V -non-repetitive (tp<50µs) Total power dissipation (Derate above 25 OC) mW PD 350 Junction to ambient thermal resistance R θJA 375 Operation junction temperature range TJ -55 +150 o T STG -55 +150 o Storage temperature range http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 o C/W C C Document ID Issued Date Revised Date Revision Page. DS-231121 2009/02/10 2010/03/10 B 9 Formosa MS N-Channel SMD MOSFET 2N7002DW Electrical characteristics (At T =25 C unless otherwise noted) o A PARAMETER CONDITIONS Symbol MIN. V GS = 0V, I D = 10uA BV DSS 60 TYP. MAX. UNIT OFF CHARACTERISTICS Drain-source breakdown voltage V 1.0 V DS = 60V, V GS = 0V V DS = 60V, V GS = 0V, T J = 125 OC I DSS Gate-body leakage current-forward V GS = 20V, V DS =0 I GSSF 100 nA Gate-body leakage current-reverse V GS = -20V, V DS =0 I GSSR -100 nA 1.7 2.5 V 3.5 4.0 5.0 6.0 Ω Zero gate voltage drain current µA 10 ON CHARACTERISTICS (Note 1) Gate threshold voltage V DS = V GS , I D = 250µA V GS(th) Static drain-source on-resistance V GS = 10V, I D = 0.5A V GS = 4.5V, I D = 300mA R DS(ON) 1.0 Source-drain current I SD 0.35 A Source-drain current (pulse), Note 2 I SDM 1.40 A Forward transconductance, Note 1 V DS =10V, I D = 500mA* Diodes foward voltage, Note 1 V DS =0V, I S = 0.12mA* g FS sec 0.6 V 1.50 0.85 DYNAMIC CHARACTERISTICS Intput capacitance V DS = 25V, V GS = 0V, f=1.0MHz Output capacitance Reverse transfer capacitance C iss 43 C oss 20 C rss Total gate charge Gate-source charge V DS = 30V, I D = 1.0A V GS =5.0V Gate-drain charge pF 6 QG 1.4 Q GS 0.8 Q GD 0.5 T d(on) 2.0 nC 6 Turn-On Delay Time V DD = 30V, R G =4.7Ω I D =500mA, V GS =4.5V Tr 5 ns T d(off) 15 Turn-Off Delay Time Tr 6 Note 1. Pulse duration = 300µs, duty cycle 1.5% 2. Pulse width limited by safe operating area. Gate Charge Test Circuit Switching Test Circuit V DD V DD RL V IN RL V GS D D V OUT V GS 1mA RG DUT G G RG S http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 S Document ID Issued Date Revised Date Revision Page. DS-231121 2009/02/10 2010/03/10 B 9 Rating and characteristic curves (2N7002DW) FIG.2 TRANSFER CHARACTERISTIC FIG.1 TYPICAL FORWARD CHARACTERISTIC 1.2 V GS = 6V~10V DRAIN TO SOURCE CURRENT,(A) DRAIN TO SOURCE CURRENT,(A) 1.2 5.0V 1.0 0.8 4.0V 0.6 0.4 3.0V 0.2 V DS = 10V 1.0 0.8 0.6 0.4 o 25 C 0.2 0 0 0 1 2 3 4 5 0 1 DRAIN TO SOURCE VOLTAGE, (V) 2 3 4 5 6 GATE TO SOURCE VOLTAGE, (V) FIG.4 ON RESISTANCE VS GATE TO SOURCE VOLTAGE FIG.3 ON RESISTANCE VS DRAIN CURRENT 5 10 4 8 3 ON-RESISTANCE, (ohm) ON-RESISTANCE, (ohm) I D = 500mA V GS = 4.5V 2 V GS = 10V 1 6 o 125 C 4 2 o 25 C 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 2 3 4 5 6 7 8 9 10 GATE TO SOURCE VOLTAGE, (V) DRAIN current, (A) FIG.5 ON RESISTANCE VS JUNCTION TEMPERATURE ON-RESISTANCE, (ohm) NORMALIZED 2.0 V GS = 10V 1.8 I D = 500mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 o JUNCTION TEMPERATURE, ( C) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date Revised Date Revision Page. DS-231121 2009/02/10 2010/03/10 B 9 Rating and characteristic curves (2N7002DW) FIG.7 GATE CHARGE FIG.6 GATE CHARGE WAVEFORM 10 Vgs Qsw Vgs(th) V DS = 15V GATE TO SOURCE VOLTAGE,(V) Qg 8 I D = 500mA 6 4 2 0 0 Qg(th) Qgs 0.2 0.6 0.8 1.0 GATE CHARGE, (nC) Qg Qgd 0.4 GATE CHARGE WAVEFORM FIG.9 BREAKDOWN VOLTAGE VS JUNCTION TEMPERATURE 73 1.2 I D = 250uA 1.0 0.9 0.8 0.7 I D = 250uA 72 1.1 BREAKDOWN VOLTAGE, (V) THRESHOLD VOLTAGE, (V) NORMALIZED FIG.8 THRESHOLD VOLTAGE VS TEMPERATURE 71 70 69 68 67 66 65 64 0.6 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 o 125 150 o JUNCTION TEMPERATURE, ( C) JUNCTION TEMPERATURE, ( C) FIG.10 SOURCE-DRAIN DIODE FORWARD VOLTAGE 10 SOURCE CURRENT,(A) V GS = 0V 1 o 25 C o 125 C 0.1 o -55 C 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 SOURCE TO DRAIN VOLTAGE, (V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date Revision Page. DS-231121 2009/02/10 2010/03/10 B 9 Formosa MS N-Channel SMD MOSFET 2N7002DW Pinning information Pinning information Type number Symbol Marking code D G S S G D 702, 02D 2N7002DW Suggested solder pad layout SOT-363 0.025(0.65) 0.025(0.65) 0.051(1.3) 0.075(1.9) 0.098(2.5) 0.024(0.60) 0.0165(0.42) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date Revision Page. DS-231121 2009/02/10 2010/03/10 B 9 Formosa MS N-Channel SMD MOSFET 2N7002DW Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-363 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.36 2.40 1.20 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date Revised Date Revision Page. DS-231121 2009/02/10 2010/03/10 B 9 Formosa MS N-Channel SMD MOSFET 2N7002DW Reel packing PACKAGE REEL SIZE SOT-363 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 9.50 240,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 8 Document ID Issued Date Revised Date Revision Page. DS-231121 2009/02/10 2010/03/10 B 9 Formosa MS N-Channel SMD MOSFET 2N7002DW High reliability test capabilities Item Test Conditions Reference Ta=150℃ Vgs=0.8 x BVGSS for 1000hours JESD22-A108-C Ta=150℃ Vds=0.8 x BVDSS for 1000hours JESD22-A108-C 2. High Temperature Reverse Bias 3. Solder ability Test Temp= 245℃ for 5sec 1. High Temperature Gate Bias JESD22-B102-D Ta=121℃/100% RH Pressure=2Atm for 168hours JESD22-A102-C JESD22-A104-B 5. Temperature Cycle Test - 65℃/ 10min~150℃/10min Transfer<5min . total 1000 cycles. 6. Temperature Humidity Test Ta=85℃ Humidity=85% RH for 1000hours 7. High Temperature Storage Test Ta=150℃ for 1000hours 4. Pressure Cooker Test http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 9 JESD22-A101-B JESD22-B103-B Document ID Issued Date Revised Date Revision Page. DS-231121 2009/02/10 2010/03/10 B 9