Formosa MS Glass Sealed SMD Switching Diode BAV100 THRU BAV103 List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2 Rating and characteristic curves........................................................ 3 Pinning information........................................................................... 4 Suggested solder pad layout............................................................. 4 Packing information.......................................................................... 5 Reel packing.................................................................................... 6 Suggested thermal profiles for soldering processes............................. 6 High reliability test capabilities........................................................... 7 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date DS-221926 2009/02/10 2010/02/10 Revision B Page. 7 Formosa MS Glass Sealed SMD Switching Diode BAV100 THRU BAV103 500mW Surface Mount Switching Diode-60-250V Package outline Features SOD-80 • Fast speed switching. • Silicon epitaxial planar chip structruction. • Hermetically sealed glass. • Small surface mounting type. • Lead-free parts meet RoHS requirments. .146(3.7) .130(3.3) SOLDERABLE ENDS .019(.48) .011(.28) .063(1.6) .055(1.4) Mechanical data • Case : GLASS MINI-MELF / SOD-80 • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.03 gram Dimensions in inches and (millimeters) Maximum ratings and Electrical Characteristics (AT PARAMETER CONDITIONS T A=25 oC unless otherwise noted) Max. UNIT V RRM 60 120 200 250 V VR 50 100 150 200 V I FSM 1000 mA Forward DC current IF 250 mA Average forward current I FAV 200 mA Power dissipation PV 500 mW Junction temperature TJ -55 Storage temperature T STG -65 Repetitive peak forward current I FRM 625 mA VF 1.00 V IR 100 15 100 15 100 15 100 15 nA µA nA µA nA µA nA µA Repetitive peak reverse voltage Reverse voltage Peak forward surge current TYPE Symbol BAV100 BAV101 BAV102 BAV103 BAV100 BAV101 BAV102 BAV103 tp = 1 s Forward voltage I F = 100 mA Reverse current V R = 50 V o V R = 50 V , T J = 100 C V R = 100 V o V R = 100 V , T J = 100 C V R = 150 V o V R = 150 V , T J = 100 C V R = 200 V o V R = 200 V , T J = 100 C Diode capacitance V R = 0 V , f = 1MHz CD Reverse recovery time I F = 30 mA , I RR = 3mA , R L = 100Ω t rr Dynamic forward resistance I F = 10mA rf Junction ambient on PC board 50mm*50mm*1.6mm R thJA http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 BAV100 BAV100 BAV101 BAV101 BAV102 BAV102 BAV103 BAV103 Min. Typ. +150 o C +150 o C 1.5 pF 50 5 Ω 500 Document ID Issued Date Revised Date DS-221926 2009/02/10 2010/02/10 ns Revision B K/W Page. 7 Rating and characteristic curves (BAV100 THRU BAV103) FIG.1-MAXIMUM PERMISSIBLE CONTINUOUS FIG.2 - FORWARD CURRENT VS. FORWARD VOLTAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE 300 600 O T J = 25 C typical values T J = 150 OC typical values 200 400 IF(mA) IF(mA) O T J = 25 C maximum values 100 200 0 0 0 100 200 0 1 Tamb(OC) 10 FIG.3 - REVERSE CURRENT VS. JUNCTION TEMPERATURE 3 2 VF(V) FIG.4 - DIODE CAPACITANCE VS. REVERSE VOLTAGE (TYPICAL VALUES) 1.8 O REVERSE CURRENT, (uA) T J = 25 C f = 1MHz 10 2 maximum values 1.4 10 Cd(pF) 1.2 1 typical values 1.0 10 -1 VR = VRmax 10 0.8 -2 0 100 o 0 200 10 JUNCTION TEMPERATURE ( C) 20 VR(V) FIG.5 - MAXIMUM PERMISSIBLECONTINUOUS REVERSE VOLTAGE VS. AMBIENT TEMPERATURE 300 BAV103 200 BAV102 VR(V) BAV101 100 BAV100 0 0 100 200 Tamb(OC) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date Revised Date DS-221926 2009/02/10 2010/02/10 Revision B Page. 7 Formosa MS Glass Sealed SMD Switching Diode BAV100 THRU BAV103 Pinning information Pin Pin1 Pin2 Simplified outline cathode anode 1 Symbol 2 1 2 Suggested solder pad layout C A B Dimensions in inches and (millimeters) PACKAGE A B C SOD-80 0.071(1.80) 0.035(0.90) 0.102(2.60) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date Revised Date DS-221926 2009/02/10 2010/02/10 Revision B Page. 7 Formosa MS Glass Sealed SMD Switching Diode BAV100 THRU BAV103 Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Symbol Tolerance Carrier width Carrier length Carrier depth Sprocket hole A B C d 0.1 0.1 0.1 0.1 2.00 3.70 1.80 1.50 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width D D1 D2 E F P P0 P1 T W W1 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 178.00 50.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Item SOD-80 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date DS-221926 2009/02/10 2010/02/10 Revision B Page. 7 Formosa MS Glass Sealed SMD Switching Diode BAV100 THRU BAV103 Reel packing PACKAGE REEL SIZE 7" SOD-80 REEL (pcs) COMPONENT SPACING (m/m) 4.0 2500 BOX (pcs) 25,000 INNER BOX (m/m) 183*183*123 REEL DIA, (m/m) 178 CARTON SIZE (m/m) CARTON (pcs) 382*262*387 200,000 APPROX. GROSS WEIGHT (kg) 9.6 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date DS-221926 2009/02/10 2010/02/10 Revision B Page. 7 Formosa MS Glass Sealed SMD Switching Diode BAV100 THRU BAV103 High reliability test capabilities Item Test Conditions Reference O 1. Solder Resistance at 260 ± 5 C for 10 ± 2sec. immerse body into solder 1/16"±1/32" MIL-STD-750D METHOD-2031 2. Solderability at 245±5 OC for 5 sec. MIL-STD-202F METHOD-208 3. High Temperature Reverse Bias V R=80% rate at T J=150 OC for 168 hrs. MIL-STD-750D METHOD-1038 4. Forward Operation Life Rated average rectifier current at T A=25 OC for 500hrs. MIL-STD-750D METHOD-1027 T A = 25 OC, I F = I O On state: power on for 5 min. off state: power off for 5 min. on and off for 500 cycles. MIL-STD-750D METHOD-1036 5. Intermittent Operation Life 6. Pressure Cooker JESD22-A102 15P SIG at T A=121 OC for 4 hrs. 7. Temperature Cycling -55 OC to +125 OC dwelled for 30 min. and transferred for 5min. total 10 cycles. 8. Thermal Shock 0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles. MIL-STD-750D METHOD-1056 9. Forward Surge Peak forward surge curren t p = 1 s MIL-STD-750D METHOD-4066-2 10. Humidity at T A=85 OC, RH=85% for 1000hrs. MIL-STD-750D METHOD-1021 11. High Temperature Storage Life at 175 OC for 1000 hrs. MIL-STD-750D METHOD-1031 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 MIL-STD-750D METHOD-1051 Document ID Issued Date Revised Date DS-221926 2009/02/10 2010/02/10 Revision B Page. 7