1N4148

Formosa MS
Switching Diode
1N4148
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings .............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Taping & bulk specifications for AXIAL devices.................................... 4
Suggested thermal profiles for soldering processes............................. 5
High reliability test capabilities...........................................................6
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
DS-222908
2008/02/10
Revised Date
-
Revision
Page.
A
6
Formosa MS
Switching Diode
1N4148
150mA Leaded Type
Switching Diode-100V
Package outline
Features
DO-35G
• Axial lead type devices for through hole design.
• Fast speed switching.
• Silicon epitaxial planar chip structruction.
• Hermetically sealed glass.
• Small surface mounting type.
• Lead-free parts meet RoHS requirments.
0.022 (0.56)
0.018 (0.46) DIA.
1.02 (26.0)
MIN.
0.165 (4.2)
MAX.
Mechanical data
0.079 (2.0)
DIA.
MAX.
1.02 (26.0)
MIN.
• Case : Glass, DO-35G
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guaranteed
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.12 gram
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25 C unless otherwise noted)
o
A
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX. UNIT
Repetitive peak reverse voltage
V RRM
100
V
Reverse voltage
VR
75
V
I FSM
2.0
A
I FRM
500
mA
IF
300
mA
Peak forward surge current
t p = 1 us
Repetitive peak forward voltage
Forward current
Average forward current
VR = 0 V
I FAV
150
mA
Power dissipation
PV
500
mW
Junction temperature
Tj
Storage temperature
T STG
Forward voltage
Reverse current
I F = 10 mA
VF
V R = 20 V
V R = 20 V , T j = 150 oC
-55
-65
0.86
+150
o
C
+175
o
C
1.00
V
IR
25
nA
IR
50
uA
5.0
uA
4.0
pF
V R = 100 V
IR
Breakdown current
I R = 100uA , TP/T = 0.01 TP = 0.3ms
V (BR)
Diode capacitance
V R = 0 V , f = 1MH z , V HF = 50m V
CD
Rectification efficiency
V HF = 2 V , f = 100 MHz
nR
I F = IR = 10mA , IRR = 1mA
t rr
8
ns
I F = 10 mA , V R = 6V , I RR = 0.1 X I R , R L = 100 OHM
t rr
4
ns
Reverse recovery time
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Page 2
100
V
%
45
Document ID
Issued Date
DS-222908
2008/02/10
Revised Date
-
Revision
Page.
A
6
Rating and characteristic curves (1N4148)
FIG.3 - TYPICAL REVERSE
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
CHARACTERISTICS
TJ=25 C
1000
100
REVERSE CURRENT, (nA)
INSTANTANEOUS FORWARD CURRENT,(mA)
1000
TJ=25 C
Pulse Width 300us
1% Duty Cycle
10
Scattering Limit
Scattering Limit
100
10
1.0
1
0.1
0
.4
.8
1.2
1.6
1
2.0
10
100
REVERSE VOLTAGE
FORWARD VOLTAGE,(V)
FIG.4 - REVERSE CURRENT
VS JUNCTION TEMPERATURE
FIG.2 - TYPICAL DIODE CAPACITANCE
3.5
3
10
2
2.5
REVERSE CURRENT, (uA)
DIODE CAPACITANCE,(pF)
3.0
2.0
1.5
1.0
0.5
0
10
V
=75
VR
1
10
100
1000
REVERSE VOLTAGE,(V)
.V
10
U
AL
ES
ES
1
5V
=7
VR
/T
U
AL
.V
YP
0V
=2
/
L
VA
P.
TY
S
UE
VR
-1
0.1
AX
/M
10
-2
10
0
200
100
o
JUNCTION TEMPERATURE ( C)
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Page 3
Document ID
Issued Date
DS-222908
2008/02/10
Revised Date
-
Revision
Page.
A
6
Formosa MS
Switching Diode
1N4148
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
Symbol
1
2
1
2
Marking
Type number
1N4148
Marking code
1N4148
Taping & bulk specifications for AXIAL devices
52.4mm/ 26.2mm
17mm DIA.
55mm Max.
A
17mm DIA.
72mm DIA.
71mm Max.
355mm
OFF Center
both sids
1.0mm
Max OFF
Alignment
1.2mm
6.3mm
REEL PACKING
DEVICE
Q'TY 1
COMPONENT
CARTON
Q'TY 2
APPROX.
CASE
(PCS / REEL)
SPACING
SIZE
(PCS / CARTON)
CROSS
"A" in FIG. A
(m/m)
TYPE
DO-35G/52mm
WEIGHT(kg)
5 mm
360 * 360 * 395
Q'TY 1
INNER
CARTON
Q'TY 2
APPROX.
(PCS / BOX)
BOX SIZE
SIZE
(PCS / CARTON)
CROSS
(m/m)
(m/m)
10,000
50,000
11. 4
AMMO PACKING
DEVICE
CASE
TYPE
WEIGHT(kg)
DO-35G/26mm
5,000
250 * 78 *48
420 * 270 * 330
150,000
16.7
DO-35G/52mm
5,000
250 *7 8 *78
420 * 270 * 330
100,000
15.0
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TEL:886-2-22696661
FAX:886-2-22696141
Page 4
Document ID
Issued Date
DS-222908
2008/02/10
Revised Date
-
Revision
Page.
A
6
Formosa MS
Switching Diode
1N4148
BULK PACKING
DEVICE
Q'TY 1
INNER
CARTON
Q'TY 2
APPROX.
CASE
(PCS / BOX)
BOX SIZE
SIZE
(PCS / CARTON)
CROSS
TYPE
(m/m)
DO-35G
96 * 80 * 4 2
2,000
WEIGHT(kg)
(m/m)
120,000
410 * 335 * 265
17.4
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=10 oC~35 oC Humidity=65%±15%
2.Reflow soldering of surface-mount devices
Critical Zone
T L to T P
tP
TP
Ramp-up
TL
tL
Temperature
T smax
T smin
TS
ts
Preheat
25
Ramp-down
t25 oC to Peak
Wave Soldering
IR Reflow
Time
3.Flow (wave)soldering (solder dipping)
Profile Feature
Soldering Condition
Average ramp-up rate(T L to TP )
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
100oC
150oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL )
-Time(tL )
183oC
60~150sec
255oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(tP )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25oC to Peak Temperature
<6minutes
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TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
DS-222908
2008/02/10
Revised Date
-
Revision
Page.
A
6
Formosa MS
Switching Diode
1N4148
High reliability test capabilities
Item Test
Conditions
Reference
o
1. Solder Resistance
at 260±5 C for 10±2sec.
immerse body into solder 1/16"±1/32"
MIL-STD-750D
METHOD-2031
2. Solderability
at 245±5 oC for 5 sec.
MIL-STD-202F
METHOD-208
3. Pull Test
1kg in axial lead direction for 10 sec.
MIL-STD-750D
METHOD-2036
4. Bend Lead
0.5kg weight applied to each lead bending
arc 90o±5 o for 3 times.
MIL-STD-750D
METHOD-2036
5. High Temperature Reverse Bias
V R=80% rate at T J=150 oC for 168 hrs.
MIL-STD-750D
METHOD-1026
6. Forward Operation Life
Rated average rectifier current at T=25 oC for 500hrs.
MIL-STD-750D
METHOD-1027
T A = 25 OC, I F = I O
On state: power on for 5 min.
off state: power off for 5 min,
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
7. Intermittent Operation Life
8. Pressure Cooker
9. Temperature Cycling
10. Thermal Shock
11. Forward Surge
12. Humidity
13. High Temperature Storage Life
14. Solvent Resistance
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15P SIG at TA=121 oC for 4 hrs.
MIL-STD-750D
METHOD-1051
-55 oC to +125oC dwelled for 30 min.
and transferred for 5min. total 10 cycles.
MIL-STD-750D
METHOD-1056
0 oC for 5 min. rise to 100 oC for 5 min. total 10 cycles.
MIL-STD-750D
METHOD-4066-2
8.3ms single half sine-wave superimposed
on rated load, one surge.
at TA=65 oC, RH=98% for 1000hrs.
MIL-STD-750D
METHOD-1038
at 175oC for 1000 hrs.
MIL-STD-750D
METHOD-1031
Dip into Freon at 25oC for 1 min.
MIL-STD-202F
METHOD-215
Page 6
Document ID
Issued Date
DS-222908
2008/02/10
Revised Date
-
Revision
Page.
A
6