Formosa MS Drive NPN Transistor FMBTA05 / FMBTA06 List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2~3 Rating and characteristic curves........................................................ 4~5 Pinning information........................................................................... 6 Marking........................................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing.................................................................................... 8 Suggested thermal profiles for soldering processes............................. 8 High reliability test capabilities........................................................... 9 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date DS-231111 2008/02/10 Revised Date 2011/07/21 Revision Page. C 9 Formosa MS Drive NPN Transistor FMBTA05 / FMBTA06 Drive NPN Transistor Package outline (B) 0.012 (0.30) .084(2.10) 0.110 (2.80) 0.120 (3.04) standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free part, ex. FMBTA05-H. .068(1.70) • Lead-free parts for green partner, exceeds environmental 0.020 (0.50) 0.045 (1.15) Features 0.034 (0.85) SOT-23 (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) 0.051 (1.30) 0.003 (0.09) 0.007 (0.18) 0.083 (2.10) 0.035 (0.89) Mechanical data Dimensions in inches and (millimeters) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per Collector C MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.008 gram B Base A Emitter Maximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER CONDITIONS Symbol FMBTA05 UNIT FMBTA06 Collector-Base voltage V CBO 60 80 Vdc Collector-Emitter voltage V CEO 60 80 Vdc Emitter-Base voltage V EBO 4.0 Vdc Collector current IC 500 mAdc Thermal Characteristics Characteristics CONDITIONS Symbol Max UNIT T = 25 C Total device dissipation FR-5 board A (1) Derate above 25 OC PD 225 mW PD 1.8 mW/ OC Thermal resistance R θJA 556 PD 300 mW Derate above 25 C PD 2.4 mW/ OC Junction to ambient R θJA 417 O Junction to ambient O Total device dissipation alumina substrate(2) Thermal resistance T A = 25 C O Operating temperature Storage temperature TJ -55 ~ +150 T STG -65 ~ +150 O O C/W C/W o 1.FR-5 = 1.0 X 0.75 X0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. 3. Pulse test: pulse width >=300µs, duty cycle<=2.0% 4. f T is defined as the frequency at which hfe extrapolates to unity. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date DS-231111 2008/02/10 Revised Date 2011/07/21 Revision Page. C 9 C Formosa MS Drive NPN Transistor FMBTA05 / FMBTA06 Characteristics (AT T =25 C unless otherwise noted) o A Off Characteristics PARAMETER Collector-Base breakdown voltage Collector-Emitter breakdown voltage(3) CONDITIONS I c = 100µAdc, I E = 0 Symbol V (BR)CBO I c = 1.0mAdc, I B = 0 V (BR)CEO Emitter-Base breakdown voltage I E = 100µAdc, I C = 0 V (BR)EBO Collector Cutoff Current V CE=60Vdc, IB=0 I CES Collector cutoff current V CB = 60Vdc, I E = 0 I CBO V CB = 80Vdc, I E = 0 Types Min. Max. UNIT FMBTA05 60 - FMBTA06 80 - FMBTA05 60 - FMBTA06 80 - 4.0 - Vdc - 0.1 µAdc FMBTA05 - 0.1 FMBTA06 - 0.1 Vdc Vdc µAdc On Characteristics PARAMETER DCcurrent gain CONDITIONS I c = 10mAdc, V CE = 1.0Vdc I c = 100mAdc, V CE = 1.0Vdc Symbol h FE Min. Max. 100 - 100 - UNIT - Collector-Emitter saturation voltage I c = 100mAdc, I B = 10mAdc V CE(sat) - 0.25 Vdc Base-Emitter saturation voltage I c = 100mAdc, V CE = 1.0Vdc V BE(on) - 1.2 Vdc Symbol Min. Max. UNIT 100 - MHz Small Signal Characteristics PARAMETER Current Gain Bandwidth Product (4) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 CONDITIONS I c = 10mA, V CE = 2.0V, f=100MHz Page 3 fT Document ID Issued Date DS-231111 2008/02/10 Revised Date 2011/07/21 Revision Page. C 9 Formosa MS Drive NPN Transistor FMBTA05 / FMBTA06 TURN-ONTIME -1.0 V 5.0u s TURN-OFF TIME +VBB VCC VCC +40 V +40 V RL 100 +10 V RL 100 OUTPUT Vin RB Vin 0 tr = 3.0 n s OUTPUT RB -6.0 pF * CS- 5.0uF -6.0 pF * CS - 5.0 uF 100 100 5.0u s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) FIG1. Switching Time Test 300 200 VCE = 2.0 V TJ = 25 C 100 70 50 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) FIG2. Current-Gain http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Circuits Page 4 Bandwidth Product Document ID Issued Date DS-231111 2008/02/10 Revised Date 2011/07/21 Revision Page. C 9 Formosa MS Drive NPN Transistor FMBTA05 / FMBTA06 80 C, CAPACITANCE (pF) 1.0 k 700 500 TJ = 25 C 60 40 t, TIME (ns) Cibo 20 200 100 70 50 10 8.0 tf VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25 C 30 20 Cobo 6.0 4.0 0.1 0.2 0.5 1.0 2.0 10 5.0 20 50 ts 300 100 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) FIG4. Switching FIG3. Capacitance 1.0 400 V,VOLTAGE (VOLTS) TJ = 125 C h FE, DC CURRENT GAIN td @ VBE(off)= 0.5 V 10 5.0 7.0 10 VR, REVERSE VOLTAGE (VOLTS) VCE = 1.0 V 200 25 C -55 C 100 80 Time TJ = 25 C 0.8 VBE(sat)@ IC/IB = 10 0.6 VBE(on)@ VCE = 1.0 V 0.4 0.2 60 VCE(sat)@ IC/IB= 10 40 0.5 1.0 2.03.0 5.0 10 20 30 50 0 0.5 100 200 300 500 DC Current 1.0 TJ = 25 C 0.8 IC = 50 mA IC = 250 mA IC = 100 mA IC = 500 mA 0.6 0.4 0.2 IC = 10 mA 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA) FIG7. Collector Saturation http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 5.0 10 20 50 100 200 500 FIG6. " ON " Voltages Gain θ VB ,TEMPERATURE COEFFICIENT (mV/ C) FIG5. 1.0 2.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) tr -0.8 -1.2 -1.6 -2.0 θ VB for VBE -2.4 -2.8 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) Region FIG8. Base-Emitter Temperature Coefficient Page 5 Document ID Issued Date DS-231111 2008/02/10 Revised Date 2011/07/21 Revision Page. C 9 Formosa MS Drive NPN Transistor FMBTA05 / FMBTA06 Pinning information Pin Simplified outline Symbol C PinB PinC PinE C Base Collector Emitter B E B E Marking Type number Marking code FMBTA05 FMBTA06 1H 1GM Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date DS-231111 2008/02/10 Revised Date 2011/07/21 Revision Page. C 9 Formosa MS Drive NPN Transistor FMBTA05 / FMBTA06 Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date DS-231111 2008/02/10 Revised Date 2011/07/21 Revision Page. C 9 Formosa MS Drive NPN Transistor FMBTA05 / FMBTA06 Reel packing PACKAGE REEL SIZE SOT-23 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) 3,000 4.0 30,000 REEL DIA, (m/m) INNER BOX (m/m) 183*183*123 CARTON SIZE (m/m) 178 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 11.6 240,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 8 Document ID Issued Date DS-231111 2008/02/10 Revised Date 2011/07/21 Revision Page. C 9 Formosa MS Drive NPN Transistor FMBTA05 / FMBTA06 High reliability test capabilities Item Test Conditions 1. Steady State Operating Life TA=25°C P D=225mW Test Duration:1000hrs 2. High Temperature Reverse Bias Tj= 150℃,V CE=80% related volage, Test Duration: 1000hrs 3. Temperature Cycle 4. Autoclave -55℃( 15min) to 150℃( 15min)Air to Air Transition Time< 20sec Test Cycles:1000cycle P=2atm Ta=121℃ RH=100% Test Duration:96hrs 5. High Temperature Storage Life Ta=150℃ Test Duration:1000hrs 6. Solderability 245℃,Test Duration:5sec 7. High Temperature High Humidity Reverse Bias Ta=85℃, 85%RH, V CE= 80% related volage,Test Duration: 1000hrs 8. Resistance to Soldering Heat 260℃, Test Duration: 10sec http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 9 Document ID Issued Date DS-231111 2008/02/10 Revised Date 2011/07/21 Revision Page. C 9