P-Channel SMD MOSFET Formosa MS FMBSS84 List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2 Electrical characteristics................................................................... 3 Rating and characteristic curves........................................................ 4~5 Pinning information........................................................................... 6 Marking........................................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing.................................................................................... 8 Suggested thermal profiles for soldering processes............................. 8 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date Revision Page. DS-231142 2009/08/10 2011/07/21 C 8 P-Channel SMD MOSFET Formosa MS FMBSS84 50V P-Channel Enhancement Mode Power MOSFET Package outline SOT-23 (B) 0.020 (0.50) .084(2.10) .068(1.70) 0.120 (3.04) 0.110 (2.80) 0.045 (1.15) DS(ON) 0.012 (0.30) • L ow on-resistance R 10Ω Max . • L ow input capacitance : 30pF Typ. • Fast switching speed : 2.5ns Typ. • L ow output capacitance : 10pF Typ. • L ow threshole : 2.0V Max. • Pb-Free Package is available. • Suffix "-H" indicates Halogen-free part, ex.FMBSS84-H 0.034 (0.85) Features (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) 0.051 (1.30) 0.003 (0.09) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per 0.007 (0.18) 0.083 (2.10) Mechanical data 0.035 (0.89) MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.008 gram M aximum ratings (AT T Dimensions in inches and (millimeters) o A =25 C unless otherwise noted) Symbol Limit Unit V DS -50 V Continuous Drain Current ID -130 mA Pulsed Drain Current ( tp ≤ 10 μs ) I DM -520 mA Gate–to–Source Voltage – Continuous V GS ±20 V PD 225 mW R θJA 556 o TJ -55 to +150 o C -55 to +150 o C Parameter Drain-Source Voltage O Total Power Dissipation(T A = 25 C) Junction-to-Ambient Thermal Resistance (PCB mounted) ,Note 1) Operation junction temperature range Storage temperature range T STG C/W Note: 1. 1-in 2 2oz Cu PCB board http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date Revised Date Revision Page. DS-231142 2009/08/10 2011/07/21 C 8 P-Channel SMD MOSFET Formosa MS FMBSS84 Electrical characteristics (At T =25 C unless otherwise noted) o A Characteristic Symbol Min V(BR)DSS -50 Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc , ID = - 250 uAdc) Zero Gate Voltage Drain Current (VDS = -25 Vdc, VGS= 0 Vdc) (VDS = -50 Vdc, VGS= 0 Vdc) (VDS = -50 Vdc, VGS= 0 Vdc, TJ = 125°C) IDSS Gate–Body Leakage Current ( V GS = ± 20 Vdc , V DS = 0 Vdc ) IGSS Vdc uAdc -0.1 -15 -60 ±10 nAdc -2.0 Vdc 10 Ohms ON CHARACTERISTICS (Note 1.) Gate–Source Threaded Voltage (VDS = VGS, ID = -250uAdc) VGS(th) Static Drain–to–Source On–Resistance (VGS = -5.0 Vdc, ID= -100 mAdc) RDS(on) Transfer Admittance (VDS = -25 Vdc, ID= -100 mAdc, f = 1.0 kHz) |yfs| -0.8 5.0 50 mS DYNAMIC CHARACTERISTICS Input Capacitance (VDS = -5.0 Vdc) Ciss 30 Output Capacitance (VDS = -5.0 Vdc) Coss 10 Transfer Capacitance (VDG = -5.0 Vdc) Crss 5.0 td(on) 2.5 tr 1.0 pF SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Rise Time Turn–Off Delay Time (V (VDD = –15 Vdc, ID = –2.5 Adc, RL = 50 Ω ) Fall Time Gate Charge td(off) 16 tf 8.0 QT 6000 ns pC SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current IS -0.130 Pulsed Current ISM -0.520 Forward Voltage (Note 2.) VSD A -2.5 V 1. Pulse Test: Pulse Width<=300us, Duty Cycle <=2%. 2. Switching characteristics are independent of operating junction temperature. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date Revised Date Revision Page. DS-231142 2009/08/10 2011/07/21 C 8 Rating and characteristic curves (FMBSS84) FIG.2 ON-REGION CHARACTERISTICS FIG.1 TRANSFER CHARACTERISTICS 0.6 0.5 O 25 C V DS = 10V ID, DRAIN CURRENT,(A) 0.5 3.25V 0.4 O -55 C ID, DRAIN CURRENT(A) O 150 C 0.4 0.3 0.2 0.1 3.0V 0.3 0.2 2.75V 0.1 2.5V 2.25V 0 0 1 2 3 4 0 FIG.3 ON-RESISTANCE VS DRAIN CURRENT V GS = 4.5V 8 O 150 C 6 O 25 C 4 O -55 C 2 0 0.2 0.4 0.6 I D, DRAIN CURRENT (A) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 2 4 8 6 10 V DS, DRAIN TO SOURCE VOLTAGE(V) R DS(on) , DRAIN- TO- SOURCE RESISTANCE (OHMS) V GS, GATE TO SOURCE VOLTAGE, (V) R DS(on) , DRAIN- TO- SOURCE RESISTANCE (OHMS) V GS = 3.5V O T J =25 C FIG.4 ON-RESISTANCE VS DRAIN CURRENT 7 V GS = 10V O 150 C 6 5 O 25 C 4 O -55 C 3 2 0 0.2 0.4 0.6 I D, DRAIN CURRENT (A) Page 4 Document ID Issued Date Revised Date Revision Page. DS-231142 2009/08/10 2011/07/21 C 8 Rating and characteristic curves (FMBSS84) FIG.6 GATE CHARGE 2 V GS = 10V I D = 0.52A 1.8 1.6 1.4 V GS = 4.5V I D = 0.13A 1.2 1 0.8 VGS, GATE TO SOURCE VOLTAGE,(V) R DS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) FIG.5 ON-RESISTANCE VARIATION WITH TEMPERATURE 8 7 V DS = 40V O T J = 25 C 6 5 4 3 I D = 0.5A 2 1 0 0.6 -55 -5 45 95 0 145 O T J, JUNCTION TEMPERAURE, ( C) 500 1000 1500 2000 Q T, TOTAL GATE CHARGE, (pC) FIG.7 BODY DIODE FORWARD VOLTAGE ID, DIODE CURRENT(A) 1 O 150 C 0.1 O -55 C O 25 C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 V SD, DIODE FORWARD VOLTAGE, (V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date Revision Page. DS-231142 2009/08/10 2011/07/21 C 8 P-Channel SMD MOSFET Formosa MS FMBSS84 Pinning information Pin Simplified outline Symbol D PinD PinG PinS Drain Drain Gate Source Gate G Source S Marking Type number Marking code FMBSS84 PD Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date Revision Page. DS-231142 2009/08/10 2011/07/21 C 8 P-Channel SMD MOSFET Formosa MS FMBSS84 Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date Revised Date Revision Page. DS-231142 2009/08/10 2011/07/21 C 8 P-Channel SMD MOSFET Formosa MS FMBSS84 Reel packing PACKAGE REEL SIZE SOT-23 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) CARTON (pcs) 383*262*387 APPROX. GROSS WEIGHT (kg) 11.6 240,000 Suggested thermal profiles for soldering processes o o 1.Storage environment: Temperature=5 C ~40 C Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) o 150 C o 200 C 60~120sec Tsmax to T L -Ramp-upRate o <3 C /sec Time maintained above: -Temperature(T L ) -Time(t L ) o 217 C 60~260sec o o 255 C- 0/ + 5 C Peak Temperature(T P ) o Time within 5 C of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 C /sec o o Time 25 C to Peak Temperature http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 <6minutes Page 8 Document ID Issued Date Revised Date Revision Page. DS-231142 2009/08/10 2011/07/21 C 8