EGFM201-BS THRU EGFM205-BS

Formosa
MS
EGFM201-BS THRU EGFM205-BS
Silicon Rectifier
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
DS-121538
2012/08/29
Revised Date
2013/04/12
Revision
Page.
B
7
Formosa
MS
EGFM201-BS THRU EGFM205-BS
Silicon Rectifier
2.0A Sufrace Mount
Efficient Fast Rectifiers-50-600V
Package outline
Features
SMB-S
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
0.220(5.6)
0.205(5.2)
• Low profile surface mounted application in order to
•
•
•
•
•
optimize board space.
High current & surge capability.
Low forward dropdown voltage
Glass passivated chip junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen free parts, ex. EGFM201-BS-H.
0.020(0.5) Typ.
0.083(2.1)
0.138(3.5)
0.122(3.1)
0.075(1.9)
Mechanical data
0.067(1.7)
0.060(1.5)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AA /SMB-S
• Terminals : Solder plated, solderable per
0.040(1.0) Typ.
MIL-STD-750, Method 2026
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.072 gram
Maximum ratings and Electrical Characteristics (AT
PARAMETER
T A=25 oC unless otherwise noted)
CONDITIONS
Forward rectified current
See Fig.2
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V R = V RRM T J = 25 OC
Reverse current
f=1MHz and applied 4V DC reverse voltage
Storage temperature
IO
2.0
A
I FSM
50
A
V RMS*2
(V)
*3
VR
(V)
EGFM201-BS
50
35
50
EGFM202-BS
100
70
100
EGFM203-BS
200
140
200
*4
VF
(V)
Operating
temperature
T J, ( OC)
*5
t rr
(ns)
0.875
400
280
400
1.25
EGFM205-BS
600
420
600
1.30
5.0
μA
pF
25
O
+175
-65
C
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
25
-55 to +150
EGFM204-BS
TYP.
100
CJ
T STG
*1
V RRM
(V)
SYMBOLS
UNIT
MIN.
IR
V R = V RRM T J = 125 OC
Diode junction capacitance
MAX.
Symbol
*4 Maximum forward [email protected] F=2.0A
*5 Reverse recovery time, note 1
35
Note 1. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 2
Document ID
Issued Date
DS-121538
2012/08/29
Revised Date
2013/04/12
Revision
Page.
B
7
Rating and characteristic curves (EGFM201-BS THRU EGFM205-BS)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1-TYPICAL FORWARD
INSTANTANEOUS FORWARD CURRENT,(A)
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
10
EGFM201-BS~EGFM203-BS
1.0
EGFM204-BS
EGFM205-BS
0.1
2.4
2.0
1.6
1.2
0.8
0.4
0
0
TJ=25°C
PULSE WIDTH=300us
1% DUTY CYCLE
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
P.C.B. Mounted on
0.2" x 0.2" (5 mm x 5 mm)
Copper Pad Areas
25
50
75
100
125
150
175
LEAD TEMPERATURE (°C)
1.8
INSTANTANEOUS FORWARD VOLTAGE,(V)
PEAK FORWARD SURGE CURRENT,(A)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
( )
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
( )
(+)
1W
NONINDUCTIVE
OSCILLISCOPE
(NOTE 1)
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
70
JUNCTION CAPACITANCE,(pF)
trr
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
-1.0A
60
50
40
30
20
10
1cm
SET TIME BASE FOR
10 / 20ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 3
Document ID
Issued Date
DS-121538
2012/08/29
Revised Date
2013/04/12
Revision
Page.
B
7
Formosa
MS
EGFM201-BS THRU EGFM205-BS
Silicon Rectifier
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
1
Symbol
1
2
2
Marking
Type number
Marking code
EGFM201-BS
EGFM202-BS
EGFM203-BS
EGFM204-BS
EGFM205-BS
E21
E22
E23
E24
E25
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
A
B
C
SMB-S
0.078 (2.00)
0.059 (1.50)
0.110 (2.80)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 4
Document ID
Issued Date
DS-121538
2012/08/29
Revised Date
2013/04/12
Revision
Page.
B
7
Formosa
MS
EGFM201-BS THRU EGFM205-BS
Silicon Rectifier
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SMB-S
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.81
5.74
2.24
1.50
330.00
50.00
178.00
62.00
13.00
1.75
5.50
8.00
4.00
2.00
0.23
12.00
18.00
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
DS-121538
2012/08/29
Revised Date
2013/04/12
Revision
Page.
B
7
Formosa
MS
EGFM201-BS THRU EGFM205-BS
Silicon Rectifier
Reel packing
PACKAGE
REEL SIZE
SMB-S
13"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
4,000
8.0
8,000
337*337*37
330
CARTON
SIZE
(m/m)
350*330*360
CARTON
(pcs)
APPROX.
GROSS WEIGHT
(kg)
16.9
64,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
150 oC
200 oC
60~120sec
Tsmax to T L
-Ramp-upRate
<3 oC/sec
Time maintained above:
-Temperature(T L )
-Time(t L )
217 oC
60~260sec
255 oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25 oC to Peak Temperature
<6minutes
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 6
Document ID
Issued Date
DS-121538
2012/08/29
Revised Date
2013/04/12
Revision
Page.
B
7
Formosa
MS
EGFM201-BS THRU EGFM205-BS
Silicon Rectifier
High reliability test capabilities
Item Test
Conditions
Reference
O
1. Solder Resistance
at 260 ± 5 C for 10 ± 2sec.
immerse body into solder 1/16"±1/32"
MIL-STD-750D
METHOD-2031
2. Solderability
at 245±5 OC for 5 sec.
MIL-STD-202F
METHOD-208
3. High Temperature Reverse Bias
V R=80% rate at T J=150 OC for 168 hrs.
MIL-STD-750D
METHOD-1038
4. Forward Operation Life
Rated average rectifier current at T A=25 OC for 500hrs.
MIL-STD-750D
METHOD-1027
T A = 25 OC, I F = I O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
5. Intermittent Operation Life
6. Pressure Cooker
JESD22-A102
15P SIG at T A=121 OC for 4 hrs.
MIL-STD-750D
METHOD-1051
7. Temperature Cycling
-55 OC to +125 OC dwelled for 30 min.
and transferred for 5min. total 10 cycles.
8. Thermal Shock
0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles.
9. Forward Surge
8.3ms single half sine-wave superimposed
on rated load, one surge.
10. Humidity
at T A=85 OC, RH=85% for 1000hrs.
MIL-STD-750D
METHOD-1021
11. High Temperature Storage Life
at 175 OC for 1000 hrs.
MIL-STD-750D
METHOD-1031
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TEL:886-2-22696661
FAX:886-2-22696141
Page 7
MIL-STD-750D
METHOD-1056
MIL-STD-750D
METHOD-4066-2
Document ID
Issued Date
DS-121538
2012/08/29
Revised Date
2013/04/12
Revision
Page.
B
7