SL0520-MH THRU SL0540

Formosa
MS
SL0520-MH THRU SL0540-MH
Low VF Chip Schottky Barrier Rectifier
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 1
DS-12160C
Issued Date
2008/02/10
Revised Date
Revision
Page.
2010/03/10
D
7
Formosa
MS
SL0520-MH THRU SL0540-MH
Low VF Chip Schottky Barrier Rectifier
0.5A Surface Mount Schottky Barrier
Rectifiers - 20V-40V
Package outline
Features
• Batch process design, excellent power dissipation offers
SOD-123H
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Tiny plastic SMD package.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen free parts, ex. SL0520-ΜΗ-H
0.146(3.7)
0.130(3.3)
0.075(1.9)
0.060(1.5)
Mechanical data
•
•
•
0.012(0.3) Typ.
0.040(1.0)
0.024(0.6)
Epoxy : UL94-V0 rated flame retardant
0.031(0.8) Typ.
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
•
•
•
Dimensions in inches and (millimeters)
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.011 gram
Maximum ratings (AT
T A=25 oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
IO
0.5
A
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I FSM
5.5
A
Reverse current
V R = V RRM T J = 25 OC
IR
1.0
mA
Thermal resistance
Junction to ambient
Diode junction capacitance
f=1MHz and applied 4V DC reverse voltage
Forward rectified current
See Fig.2
Forward surge current
Storage temperature
42
CJ
130
T STG
*1
V RRM
(V)
V RMS*2
(V)
*3
VR
(V)
SL0520-MH
20
14
20
0.38
SL0530-MH
30
21
30
0.40
SL0540-MH
40
28
40
0.40
SYMBOLS
R θJA
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*4
VF
(V)
Operating
temperature
T J, ( OC)
-55 to +100
O
C/W
pF
O
+175
-65
C
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@I F=0.5A
Document ID
Page 2
DS-12160C
Issued Date
2008/02/10
Revised Date
Revision
Page.
2010/03/10
D
7
Rating and characteristic curves (SL0520-MH THRU SL0540-MH)
FIG.1-TYPICAL FORWARD
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
54
L0
/S
05
30
-M
H
3.0
0M
SL
05
20
-M
H
H
10
SL
1.0
0.6
0.5
0.4
Single Phase
0.3
Half Wave 60Hz
Resistive Or Inductive Load
0.2
0.1
0
0
20
40
TJ=25 C
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
0.1
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
PEAK FORWAARD SURGE CURRENT,(A)
INSTANTANEOUS FORWARD CURRENT,(A)
50
10
8
6
8.3ms Single Half
TJ=25 C
Sine Wave
4
JEDEC method
2
0
1
5
50
10
100
1000
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
350
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
NUMBER OF CYCLES AT 60Hz
10
TJ=75 C
TJ=25 C
1
300
250
200
150
100
50
0
.1
0
20
40
60
80
.01
.1
.5
1
5
10
50
100
Revised Date
Revision
Page.
2010/03/10
D
7
REVERSE VOLTAGE,(V)
PERCENTAGE RATED PEAK REVERSE VOLTAGE
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.05
100 120 140
Document ID
Page 3
DS-12160C
Issued Date
2008/02/10
Formosa
MS
SL0520-MH THRU SL0540-MH
Low VF Chip Schottky Barrier Rectifier
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
1
Symbol
2
1
2
Marking
Type number
Marking code
SL0520-MH
SL0530-MH
SL0540-MH
LA
LB
LC
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
A
B
C
SOD-123H
0.071 (1.80)
0.051 (1.30)
0.067 (1.70)
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 4
DS-12160C
Issued Date
2008/02/10
Revised Date
Revision
Page.
2010/03/10
D
7
Formosa
MS
SL0520-MH THRU SL0540-MH
Low VF Chip Schottky Barrier Rectifier
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOD-123H
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.00
3.85
1.10
1.50
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 5
DS-12160C
Issued Date
2008/02/10
Revised Date
Revision
Page.
2010/03/10
D
7
Formosa
MS
SL0520-MH THRU SL0540-MH
Low VF Chip Schottky Barrier Rectifier
Reel packing
PACKAGE
REEL SIZE
7"
SOD-123H
REEL
(pcs)
COMPONENT
SPACING
(m/m)
4.0
3,000
BOX
(pcs)
30,000
INNER
BOX
REEL
DIA,
CARTON
SIZE
CARTON
APPROX.
GROSS WEIGHT
(m/m)
(m/m)
(m/m)
(pcs)
(kg)
183*183*123
178
382*262*387
240,000
8.5
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
150 oC
200 oC
60~120sec
Tsmax to T L
-Ramp-upRate
<3 oC/sec
Time maintained above:
-Temperature(T L )
-Time(t L )
217 oC
60~260sec
255 oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25 oC to Peak Temperature
<6minutes
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 6
DS-12160C
Issued Date
2008/02/10
Revised Date
Revision
Page.
2010/03/10
D
7
Formosa
MS
SL0520-MH THRU SL0540-MH
Low VF Chip Schottky Barrier Rectifier
High reliability test capabilities
Item Test
Conditions
Reference
O
1. Solder Resistance
at 260 ± 5 C for 10 ± 2sec.
immerse body into solder 1/16"±1/32"
MIL-STD-750D
METHOD-2031
2. Solderability
at 245±5 OC for 5 sec.
MIL-STD-202F
METHOD-208
3. High Temperature Reverse Bias
V R=80% rate at T J=100 OC for 168 hrs.
MIL-STD-750D
METHOD-1026
4. Forward Operation Life
Rated average rectifier current at T A=25 OC for 500hrs.
MIL-STD-750D
METHOD-1027
T A = 25 OC, I F = I O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
5. Intermittent Operation Life
6. Pressure Cooker
JESD22-A102
15P SIG at T A=121 OC for 4 hrs.
MIL-STD-750D
METHOD-1051
7. Temperature Cycling
-55 OC to +125 OC dwelled for 30 min.
and transferred for 5min. total 10 cycles.
8. Thermal Shock
0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles.
9. Forward Surge
8.3ms single half sine-wave superimposed
on rated load, one surge.
10. Humidity
at T A=85 OC, RH=85% for 1000hrs.
MIL-STD-750D
METHOD-1038
11. High Temperature Storage Life
at 175 OC for 1000 hrs.
MIL-STD-750D
METHOD-1031
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MIL-STD-750D
METHOD-4066-2
Document ID
Page 7
MIL-STD-750D
METHOD-1056
DS-12160C
Issued Date
2008/02/10
Revised Date
Revision
Page.
2010/03/10
D
7