Formosa MS

Formosa
MS
SGFM101E-D2 THRU SGFM108E-D2
Chip Silicon Rectifier
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
Revised Date
DS-121433
2009/02/10
2011/09/28
Revision
Page.
E
7
Formosa
MS
SGFM101E-D2 THRU SGFM108E-D2
Chip Silicon Rectifier
10.0A Surface Mount Super
Fast Rectifiers-50-600V
Package outline
Features
D2PAK
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
•
•
•
•
•
•
optimize board space..
High current capability.
Super fast reovery time for switching mode application.
High surge current capability.
Glass passivated chip junction.
Lead-free parts meet enironmental standards of
MIL-STD-19500/228
Suffix "-H" indicates Halogen free parts, ex. SGFM101E-D2-H.
0.402(10.20)
0.386(9.80)
0.046(1.20)
0.032(0.80)
0.185(4.70)
0.169(4.30)
0.055(1.40)
0.047(1.20)
0.370(9.40)
0.354(9.00)
0.012(0.30)
0.004(0.10)
0.192(4.8)
0.176(4.4)
Mechanical data
0.108(2.70)
0.205(5.20)
0.189(4.80)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, TO-263 / D2PAK
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
PIN 1
PIN 3
PIN 2
T A=25 oC unless otherwise noted)
PARAMETER
O
Ambient temperature = 50 C
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V R = V RRM T J = 25 OC
Reverse current
UNIT
IO
10.0
A
I FSM
150
A
f=1MHz and applied 4V DC reverse voltage
Storage temperature
V RMS*2
(V)
*3
VR
(V)
SGFM101E-D2
50
35
50
SGFM102E-D2
100
70
100
SGFM104E-D2
200
140
200
*5
t rr
(ns)
*4
VF
(V)
Operating
temperature
T J, ( OC)
35
SGFM106E-D2
400
280
400
1.30
600
420
600
1.70
10
µA
pF
80
O
+175
-65
C
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
0.975
SGFM108E-D2
TYP.
50
CJ
T STG
*1
V RRM
(V)
MIN.
IR
V R = V RRM T J = 125 OC
Diode junction capacitance
MAX.
Symbol
CONDITIONS
Forward rectified current
SYMBOLS
0.092(2.30)
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 1.46 gram
Maximum ratings (AT
0.024(0.60)
0.016(0.40)
0.063(1.60)
0.055(1.40)
-55 to +150
*4 Maximum forward [email protected] F=10.0A
*5 Reverse recovery time, note 1
Note 1. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 2
Document ID
Issued Date
Revised Date
DS-121433
2009/02/10
2011/09/28
Revision
Page.
E
7
Rating and characteristic curves (SGFM101E-D2 THRU SGFM108E-D2)
PEAK FORWARD SURGE CURRENT,(A)
AVERAGE FORWARD CURRENT
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
12
10
8
6
4
2
single phase half wave 60Hz
resistive or inductive load
0
25
50
75
100
125
150
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
120
90
Sine Wave
60
JEDEC method
30
0
1
5
AMBIENT TEMPERATURE,( °C)
50
10
NUMBER OF CYCLES AT 60Hz
FIG. 3 - TYPICAL INSTANTANEOUR FORWARD
CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
uAMPERES
INSTANTANEOUS FORWARD CURRENT,
AMPERES
8.3ms Single Half
TJ=25 C
FIG. 4 - TYPICAL INSTANTANEOUS REVERSE
CHARACTERISTICS
100
100
TJ=25 OC
SGFM101E-D2 ,SGFM102E-D2
SGFM104E-D2
10
SGFM106E-D2
1.0
0.1
SGFM108E-D2
pulse width=300us
1% duty cycle
0.01
T J =125°C
10
T J =100°C
1
T J =25°C
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
F IG . 6 - T EST C IRCUIT D IAGRAM AND R EVERSE
R ECOVERY T IME C HARACTERISTIC
JUNCTION CAPACITANCE,(pF)
140
120
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
100
|
|
|
|
|
|
|
|
+0.5A
( )
(+)
80
25Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
( )
60
1W
NONINDUCTIVE
(+)
0
-0.25A
OSCILLISCOPE
(NOTE 1)
40
-1.0A
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
20
1cm
SET TIME BASE FOR
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 3
Document ID
Issued Date
Revised Date
DS-121433
2009/02/10
2011/09/28
Revision
Page.
E
7
Formosa
MS
SGFM101E-D2 THRU SGFM108E-D2
Chip Silicon Rectifier
Pinning information
Simplified outline
Symbol
2
2
1
3
1
3
Marking
Type number
Marking code
SGFM101E-D2
SGFM102E-D2
SGFM104E-D2
SGFM106E-D2
SGFM108E-D2
SF101E
SF102E
SF104E
SF106E
SF108E
Suggested solder pad layout
X1
Y1
L
C
Y2
PACKAGE
D2PAK
C
0.374(9.50)
E
0.098(2.50)
L
0.665(16.90)
X1
0.425(10.80)
X2
0.071(1.80)
Y1
0.449(11.40)
Y2
0.138(3.50)
X2
Dimensions in inches and (millimeters)
E
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 4
Document ID
Issued Date
Revised Date
DS-121433
2009/02/10
2011/09/28
Revision
Page.
E
7
Formosa
MS
SGFM101E-D2 THRU SGFM108E-D2
Chip Silicon Rectifier
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
D2PAK
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
10.70
16.30
5.10
1.50
330.00
50.00
13.00
1.75
11.50
16.00
4.00
2.00
0.23
24.00
30.00
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
Revised Date
DS-121433
2009/02/10
2011/09/28
Revision
Page.
E
7
Formosa
MS
SGFM101E-D2 THRU SGFM108E-D2
Chip Silicon Rectifier
Reel packing
PACKAGE
REEL SIZE
D2PAK/TO-263
13"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
800
BOX
(pcs)
16.0
800
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
337*337*37
330
CARTON
SIZE
(m/m)
350*330*360
CARTON
(pcs)
APPROX.
GROSS WEIGHT
(kg)
6,400
15.0
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
150 oC
200 oC
60~120sec
Tsmax to T L
-Ramp-upRate
<3 oC/sec
Time maintained above:
-Temperature(T L )
-Time(t L )
217 oC
60~260sec
255 oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25 oC to Peak Temperature
<6minutes
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 6
Document ID
Issued Date
Revised Date
DS-121433
2009/02/10
2011/09/28
Revision
Page.
E
7
Formosa
MS
SGFM101E-D2 THRU SGFM108E-D2
Chip Silicon Rectifier
High reliability test capabilities
Item Test
Conditions
Reference
1. Solder Resistance
o
at 260±5 C for 10±2sec.
immerse body into solder 1/16"±1/32"
2. Solderability
at 245±5 C for 5 sec.
MIL-STD-202F
METHOD-208
3. High Temperature Reverse Bias
V R=80% rate at T J=150 oC for 168 hrs.
MIL-STD-750D
METHOD-1026
4. Forward Operation Life
Rated average rectifier current at T A=25 C for 500hrs.
MIL-STD-750D
METHOD-1027
T A = 25 OC, I F = I O
On state: power on for 5 min.
off state: power off for 5 min,
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
6. Pressure Cooker
15P SIG at T A=121 oC for 4 hrs.
JESD22-A102
7. Temperature Cycling
-55 oC to +125 oC dwelled for 30 min.
and transferred for 5min. total 10 cycles.
MIL-STD-750D
METHOD-1051
5. Intermittent Operation Life
8. Thermal Shock
MIL-STD-750D
METHOD-2031
o
o
MIL-STD-750D
METHOD-1056
0 oC for 5 min. rise to 100 oC for 5 min. total 10 cycles.
MIL-STD-750D
METHOD-4066-2
9. Forward Surge
8.3ms single half sine-wave superimposed
on rated load, one surge.
10. Humidity
at T A=85 oC, RH=85% for 1000hrs.
MIL-STD-750D
METHOD-1038
11. High Temperature Storage Life
at 175 oC for 1000 hrs.
MIL-STD-750D
METHOD-1031
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TEL:886-2-22696661
FAX:886-2-22696141
Page 7
Document ID
Issued Date
Revised Date
DS-121433
2009/02/10
2011/09/28
Revision
Page.
E
7