Formosa MS SMD MOSFET FMS2305 List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2~ 3 Rating and characteristic curves........................................................ 4~5 Pinning information........................................................................... 6 Marking........................................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing.................................................................................... 8 Suggested thermal profiles for soldering processes............................. 8 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 1 DS-231131 Issued Date Revised Date Revision Page. 2009/02/10 2011/07/21 D 8 Formosa MS SMD MOSFET FMS2305 20V P-Channel Enhancement Mode MOSFET Package outline SOT-23 DS(ON) 0.012 (0.30) (B) 0.020 (0.50) GS 0.034 (0.85) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) Mechanical data 0.051 (1.30) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per 0.003 (0.09) 0.083 (2.10) 0.007 (0.18) GS .084(2.10) DS(ON) DS(ON) .068(1.70) GS GS 0.110 (2.80) DS(ON) DS(ON) 0.120 (3.04) ≦62mΩ@V =-10V •R ≦72mΩ@V =-4.5V •R ≦91mΩ@V =-2.5V •R ≦120mΩ@V =-1.8V •R • Super high density cell design for extremely low R • Exceptional on-resistance and maximum DC current capability • In compliance with EU RoHS 2002/95/EC directives. • Suffix "-H" indicates Halogen-free part, ex.FMS2305-H. 0.045 (1.15) Features 0.035 (0.89) MIL-STD-750, Method 2026 Dimensions in inches and (millimeters) • Mounting Position : Any • Weight : Approximated 0.008 gram M aximum ratings (AT T A =25 oC unless otherwise noted) PARAMETER CONDITIONS Drain-source voltage Symbol Steady State V DSS V -20 (T A = 25 OC) Drain current-continue UNIT -4.0 ID (T A = 70 OC) A -3.1 -pulsed Gate- source voltage-continue I DM -15 V GS ±8.0 Maximum power dissipation (T A = 25 OC) V 1.4 W PD (T A = 70 OC) R θJA Thermal resistance-junction to ambient* Operation junction temperature Storage temperature 0.9 Steady State o 90 C/W TJ -55 to +150 o T STG -65 to +175 o C C 2 *The device mounted on 1in FR4 board with 2 oz copper http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 2 DS-231131 Issued Date Revised Date Revision Page. 2009/02/10 2011/07/21 D 8 Formosa MS SMD MOSFET FMS2305 Electrical characteristics (At T =25 C unless otherwise noted) o A PARAMETER CONDITIONS Symbol MIN. V GS = 0V, I D = -250uA BV DSS -20 V DS =-20V, V GS = 0V, T J = 25 OC I DSS Gate-body leakage current-forward V GS = 8V, V DS =0 I GSSF Gate-body leakage current-reverse V GS = -8V, V DS =0 I GSSR TYP. MAX. UNIT STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current V Gate threshold voltage V DS = V GS , I D = -250uA V GS(th) Drain-Source On-Resistance a V GS = -10V, I D = -4.2A V GS = -4.5V, I D = -3.4A V GS = -2.5V, I D = -2.5A V GS = -1.8V, I D = -1.7A R DS(ON) 52 60 70 90 V SD 0.8 Diode Forward Voltage V GS =0V, I S = -1.2A, T J =25 OC 1.0 µA 100 nA -100 nA -1.0 V 62 72 91 120 mΩ -0.4 V DYNAMIC PARAMETERS Intput capacitance Output capacitance V DS = -15V, V GS = 0V, f=1.0MHz Reverse transfer capacitance C iss 745 C oss 65 C rss 21 Total gate charge(-10V) Qg 20 Total gate charge(-4.5V) Qg 10 Q gs 2.8 Q gd 2.5 Gate-source charge V DS = -15V, I D = -4.2A V GS =-10V Gate-drain charge pF nC T d(on) 32 Tr 18 T d(off) 57 Tf 4.5 Turn-On Delay Time V DD= - 15V, R L =15Ω V GEN=-10V, R G=6Ω ns Turn-Off Delay Time Notes: a.Pulse test: pulse width≦300us, duty cycle≦2%, Guaranteed by design, not subject to production testing. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 3 DS-231131 Issued Date Revised Date Revision Page. 2009/02/10 2011/07/21 D 8 Rating and characteristic curves (FMS2305) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 4 DS-231131 Issued Date Revised Date Revision Page. 2009/02/10 2011/07/21 D 8 Rating and characteristic curves (FMS2305) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 5 DS-231131 Issued Date Revised Date Revision Page. 2009/02/10 2011/07/21 D 8 Formosa MS SMD MOSFET FMS2305 Pinning information Pin Simplified outline Symbol D PinD PinG PinS Drain Drain Gate Source Gate G Source S Marking Type number Marking code PO5 Σ •• WEG 0K FMS2305 (Note 2) Example: MAR APR MAY JUN JUL AUG SEP OCT NOV DEC Odd 1 2 3 4 5 6 7 8 9 T V C Even E F H J K L N P U X Y Z PO5 1 Note 1. Σ=Date code Month JAN FEB Year (Note 1) •• Note 2. P/N： “WEG” is FMS2305-H “WE” shown on the 1st~2rd position on --- FMS2305 “G” shown on the 3th position on --- Green product-Halogen free D/C： 0K is the sequence of “0-9” & “A~Z” 0~9 shown on the 4th position on ---2010~2019 A~Z shown on the 5th position on ---1week~26week A~Z shown on the 5th position on ---27week~52week Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 6 DS-231131 Issued Date Revised Date Revision Page. 2009/02/10 2011/07/21 D 8 Formosa MS SMD MOSFET FMS2305 Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 7 DS-231131 Issued Date Revised Date Revision Page. 2009/02/10 2011/07/21 D 8 Formosa MS SMD MOSFET FMS2305 Reel packing PACKAGE REEL SIZE SOT-23 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) 383*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 11.6 240,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 8 DS-231131 Issued Date Revised Date Revision Page. 2009/02/10 2011/07/21 D 8