Formosa MS

Formosa MS
Switching Diode
BAV19 THRU BAV21
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings .............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Taping & bulk specifications for AXIAL devices.................................... 4
Suggested thermal profiles for soldering processes............................. 5
High reliability test capabilities...........................................................6
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
DS-222953
2009/08/10
Revised Date
-
Revision
Page.
A
6
Formosa MS
Switching Diode
BAV19 THRU BAV21
200mW Surface Mount
Switching Diode-120-250V
Package outline
Features
DO-35G
• Axial lead type devices for through hole design.
• Fast speed switching.
• Silicon epitaxial planar chip structruction.
• Hermetically sealed glass.
• Small surface mounting type.
• Lead-free parts meet RoHS requirments.
0.022 (0.56)
0.018 (0.46) DIA.
1.02 (26.0)
MIN.
0.165 (4.2)
MAX.
Mechanical data
0.079 (2.0)
DIA.
MAX.
1.02 (26.0)
MIN.
• Case : Glass, DO-35G
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guaranteed
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.12 gram
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25 C unless otherwise noted)
o
A
PARAMETER
CONDITIONS
Max.
UNIT
V RRM
120
200
250
V
VR
100
150
200
V
I FSM
1000
mA
Forward DC current
IF
250
mA
Average forward current
I FAV
200
mA
Power dissipation
PV
500
mW
Junction temperature
Tj
-55
Storage temperature
T STG
-65
Repetitive peak forward current
I FRM
625
mA
VF
1.00
V
100
15
100
15
100
15
nA
µA
nA
µA
nA
µA
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
TYPE
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
t p = 1 us
Symbol
Forward voltage
I F = 100 mA
Reverse current
V R = 100 V
V R = 100 V , T j = 100 oC
V R = 150 V
V R = 150 V , T j = 100 oC
V R = 200 V
V R = 200 V , T j = 100 oC
Diode capacitance
V R = 0 V , f = 1MH z
CD
Reverse recovery time
I F = 30 mA , I RR = 3mA , R L = 100 OHM
t rr
Dynamic forward resistance
I F = 10mA
rf
Junction ambient
on PC board 50mm*50mm*1.6mm
R thJA
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FAX:886-2-22696141
Page 2
BAV19
BAV19
BAV20
BAV20
BAV21
BAV21
Min.
Typ.
+175
o
C
+175
o
C
IR
1.5
pF
50
ns
375
K/W
5
Document ID
Issued Date
DS-222953
2009/08/10
Ù
Revised Date
-
Revision
Page.
A
6
Rating and characteristic curves (BAV19 THRU BAV21)
FIG.1-MAXIMUM PERMISSIBLE CONTINUOUS
FIG.2 - FORWARD CURRENT VS. FORWARD VOLTAGE
FORWARD CURRENT VS. AMBIENT TEMPERATURE
300
600
O
T J = 25 C
typical values
T J = 150OC
typical values
200
400
IF(mA)
IF(mA)
O
T J = 25 C
maximum values
100
200
0
0
0
100
200
0
1
Tamb(OC)
10
FIG.3 - REVERSE CURRENT VS.
JUNCTION TEMPERATURE
3
2
VF(V)
FIG.4 - DIODE CAPACITANCE VS. REVERSE VOLTAGE
(TYPICAL VALUES)
1.8
O
REVERSE CURRENT, (uA)
T J = 25 C
f = 1MHz
10
2
maximum values
1.4
10
Cd(pF)
1.2
1
typical values
1.0
10
-1
VR = VRmax
10
0.8
-2
0
100
o
0
200
10
JUNCTION TEMPERATURE ( C)
20
VR(V)
FIG.5 - MAXIMUM PERMISSIBLECONTINUOUS
REVERSE VOLTAGE VS. AMBIENT TEMPERATURE
300
BAV100
200
BAV101
VR(V)
BAV102
100
0
0
100
200
Tamb(OC)
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Page 3
Document ID
Issued Date
DS-222953
2009/08/10
Revised Date
-
Revision
Page.
A
6
Formosa MS
Switching Diode
BAV19 THRU BAV21
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
Symbol
1
2
1
2
Marking
Type number
1N4148
Marking code
1N4148
Taping & bulk specifications for AXIAL devices
52.4mm/ 26.2mm
17mm DIA.
55mm Max.
A
17mm DIA.
72mm DIA.
71mm Max.
355mm
OFF Center
both sids
1.0mm
Max OFF
Alignment
1.2mm
6.3mm
REEL PACKING
DEVICE
Q'TY 1
COMPONENT
CARTON
Q'TY 2
APPROX.
CASE
(PCS / REEL)
SPACING
SIZE
(PCS / CARTON)
CROSS
"A" in FIG. A
(m/m)
TYPE
DO-35G/52mm
WEIGHT(kg)
5 mm
360 * 360 * 395
Q'TY 1
INNER
CARTON
Q'TY 2
APPROX.
(PCS / BOX)
BOX SIZE
SIZE
(PCS / CARTON)
CROSS
(m/m)
(m/m)
10,000
50,000
11. 4
AMMO PACKING
DEVICE
CASE
TYPE
WEIGHT(kg)
DO-35G/26mm
5,000
250 * 78 *48
420 * 270 * 330
150,000
16.7
DO-35G/52mm
5,000
250 *7 8 *78
420 * 270 * 330
100,000
15.0
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TEL:886-2-22696661
FAX:886-2-22696141
Page 4
Document ID
Issued Date
DS-222953
2009/08/10
Revised Date
-
Revision
Page.
A
6
Formosa MS
Switching Diode
BAV19 THRU BAV21
BULK PACKING
DEVICE
Q'TY 1
INNER
CARTON
Q'TY 2
APPROX.
CASE
(PCS / BOX)
BOX SIZE
SIZE
(PCS / CARTON)
CROSS
TYPE
(m/m)
DO-35G
96 * 80 * 4 2
2,000
WEIGHT(kg)
(m/m)
120,000
410 * 335 * 265
17.4
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=10 oC~35 oC Humidity=65%±15%
2.Reflow soldering of surface-mount devices
Critical Zone
T L to T P
tP
TP
Ramp-up
TL
tL
Temperature
T smax
T smin
TS
ts
Preheat
25
Ramp-down
t25 oC to Peak
Wave Soldering
IR Reflow
Time
3.Flow (wave)soldering (solder dipping)
Profile Feature
Soldering Condition
Average ramp-up rate(T L to TP )
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
100oC
150oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL )
-Time(tL )
183oC
60~150sec
255oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(tP )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25oC to Peak Temperature
<6minutes
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
DS-222953
2009/08/10
Revised Date
-
Revision
Page.
A
6
Formosa MS
Switching Diode
BAV19 THRU BAV21
High reliability test capabilities
Item Test
Conditions
Reference
o
1. Solder Resistance
at 260±5 C for 10±2sec.
immerse body into solder 1/16"±1/32"
MIL-STD-750D
METHOD-2031
2. Solderability
at 245±5 oC for 5 sec.
MIL-STD-202F
METHOD-208
3. Pull Test
1kg in axial lead direction for 10 sec.
MIL-STD-750D
METHOD-2036
4. Bend Lead
0.5kg weight applied to each lead bending
arc 90o±5 o for 3 times.
MIL-STD-750D
METHOD-2036
5. High Temperature Reverse Bias
V R=80% rate at T J=150 oC for 168 hrs.
MIL-STD-750D
METHOD-1026
6. Forward Operation Life
Rated average rectifier current at T=25 oC for 500hrs.
MIL-STD-750D
METHOD-1027
T A = 25 OC, I F = I O
On state: power on for 5 min.
off state: power off for 5 min,
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
7. Intermittent Operation Life
8. Pressure Cooker
9. Temperature Cycling
10. Thermal Shock
11. Forward Surge
12. Humidity
13. High Temperature Storage Life
14. Solvent Resistance
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FAX:886-2-22696141
15P SIG at TA=121 oC for 4 hrs.
MIL-STD-750D
METHOD-1051
-55 oC to +125oC dwelled for 30 min.
and transferred for 5min. total 10 cycles.
MIL-STD-750D
METHOD-1056
0 oC for 5 min. rise to 100 oC for 5 min. total 10 cycles.
MIL-STD-750D
METHOD-4066-2
8.3ms single half sine-wave superimposed
on rated load, one surge.
at TA=65 oC, RH=98% for 1000hrs.
MIL-STD-750D
METHOD-1038
at 175oC for 1000 hrs.
MIL-STD-750D
METHOD-1031
Dip into Freon at 25oC for 1 min.
MIL-STD-202F
METHOD-215
Page 6
Document ID
Issued Date
DS-222953
2009/08/10
Revised Date
-
Revision
Page.
A
6