RB886G Diodes Schottky barrier diode RB886G !External dimensions (Units : mm) !Applications High frequency detection !Features 1) Small mold type. (VMD2) 2) Low Ct and high detection efficiency. 0.6±0.05 0.27±0.03 0.13±0.03 1.0±0.05 1.4±0.05 CATHODE MARK 0.5±0.05 !Construction Silicon epitaxial planar ROHM : VMD2 EIAJ : − JEDEC : − !Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage Symbol Limits Unit VR 5.0 V Forward current IF 10 mA Junction temperature Tj 125 °C Storage temperature Tstg −40~+125 °C !Electrical characteristics (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. Unit VF − − 0.35 V IF=1.0mA Conditions Reverse current IR − − 120 µA VR=5.0V Capacitance between terminal CT − 0.53 0.80 pF VR=1.0V, f=1.0MHz ∗ Please pay attention to static electricity when handling. 1/2 RB886G Diodes 25°C 75°C −25°C 1000 125°C REVERSE CURRENT : IR (AV) FORWARD CURRENT : IF (mA) 10 1 0.1 0.01 0 0.4 0.8 1.2 1.6 125°C 100 75°C 25°C 10 −25°C 1 0 1 2 3 4 REVERSE VOLTAGE : VR (V) 0.9 0.8 f=1MHz 0.7 0.6 0.5 0.4 f=1.8GHz 0.3 0.2 0.1 0 0 1 2 3 4 5 6 REVERSE VOLTAGE : VR (V) FORWARD VOLTAGE : VF (V) Fig.1 Forward characteristics 5 CAPACITANCE BETWEEN TERMINALS : CT (pF) !Electrical characteristic curves (Ta=25°C) Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics !Spice parameter Parameter Value Unit 1 IS : Saturation current 8.79631E-06 A 2 N : Emission coefficient 2.24097 − 6.20008 Ω − SEC 3 RS : Ohmic resistance 4 TT Transit time : CJO : Junction capacitance 4.21E-13 F M : Geading coefficient 0.346685 − 7 VJ : Junction potential 0.7 V 8 FC : Depretion cap. Coefficient 0.5 − 5 6 9 EG : Activation energy 1.11 eV 10 XTI : Isat temperature exponent 3 − 11 KF : Flicker noise coefficient − − 12 AF : Flicker noise exponent − − 13 BV : Reverse breakdown voltage 20 V 14 IBV : I at V-breakdown − A 15 RL Junction leakage resistance 2.39557E+05 Ω : 2/2