WTC3401 P-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT -4.2 AMPERES 1 DRAIN SOURCE VOLTAGE GATE -30 VOLTAGE 2 SOURCE Features: 3 *Advanced trench process technology *High Density Cell Design For Ultra Low On-Resistance Maximum Ratings(TA=25℃ 1 2 SOT-23 Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current (T A 1 2 (T A =25˚C) (T A =70˚C) Junction and Storage Temperature Range 3 1.4 PD W 1.0 -55~+150 ˚C Unless Otherwise Specified) Rating Maximum Junction-to-Ambient 1 A -30 TJ , Tstg Thermal Characteristics (TA=25℃ Maximum Junction-to-Lead -3.5 I DM Power Dissipation V -4.2 ID (T A Unit Symbol t ≤ 10s Steady-State Steady-State R θJA R θJL Typ Max 65 90 85 125 43 60 Unit ˚C/W ˚C/W 1.The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25˚C. The value in any given application depends on the user’s specific board design. The current rating is based on the t≤10s thermal resistance rating. 2.Repetitive rating, pulse width limited by junction temperature. 3.The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. Device Marking WTC3401= A1 WEITRON http//:www.weitron.com.tw 1/5 03-Sep-2013 WTC3401 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Static Drain-Source Breakdown Voltage ID=-250µA, VGS=0V Zero Gate Voltage Drain Current VDS=-24V, VGS=0V Symbol Min BVDSS -30 Typ Gate-Body leakage current VDS=0V, VGS=±12V -1 -5 IGSS Gate Threshold Voltage VDS=VGS ID=-250µA VGS(th) -0.7 On state drain current VGS=-4.5V, VDS=-5V ID(ON) -25 Static Drain-Source On-Resistance VGS=-10V, ID=-4.2A -1 µA ±100 nA -1.3 V A 70 RDS(ON) VGS=-4.5V, ID=-4A Units V IDSS TJ=55°C Max 80 VGS=-2.5V, ID=-1A mΩ 120 Forward Transconductance VDS=-5V, ID=-5A gFS Diode Forward Voltage IS=-1A,VGS=0V VSD Maximum Body-Diode Continuous Current 7 S 11 -0.75 IS -1 V -2.2 A Dynamic Input Capacitance VGS=0V, VDS=-15V, f=1MHz Ciss 954 pF Output Capacitance VGS=0V, VDS=-15V, f=1MHz Coss 115 pF Reverse Transfer Capacitance VGS=0V, VDS=-15V, f=1MHz Crss 77 pF Rg 6 Ω Qg 9.4 nC Gate Source Charge VGS=-4.5V, VDS=-15V, ID=-4A Qgs 2 nC Gate Drain Charge VGS=-4.5V, VDS=-15V, ID=-4A Qgd 3 nC Turn-On DelayTime VGS=-10V, VDS=-15V, RL=3.6Ω , RGEN=6Ω tD(on) 6.3 ns Turn-On Rise Time VGS=-10V, VDS=-15V, RL=3.6Ω , RGEN=6Ω tr 3.2 ns Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=3.6Ω , RGEN=6Ω tD(off) 38.2 ns Turn-Off Fall Time VGS=-10V, VDS=-15V, RL=3.6Ω , RGEN=6Ω tf 12 ns Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs trr 20.2 ns Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs Qrr 11.2 nC Gate resistance VGS=0V, VDS=0V, f=1MHz Switching Total Gate Charge VGS=-4.5V, VDS=-15V, ID=-4A WEITRON http//:www.weitron.com.tw 2/5 03-Sep-2013 WTC3401 Typical Electrical Characteristics 10 25.00 -10V VDS=-5V -4.5V 20.00 8 6 15.00 -ID(A) -ID (A) -3V -2.5V VGS=-2V 5.00 0.00 0.00 125°C 4 10.00 25°C 2 0 1.00 2.00 3.00 4.00 5.00 0 0.5 120 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 3 1.8 100 80 VGS=-2.5V VGS=-4.5V 60 40 VGS=-10V 20 0.00 ID=-3.5A, VGS=-4.5V 1.6 ID=-3.5A, VGS=-10V 1.4 VGS=-2.5V 1.2 ID=-1A 1 0.8 2.00 4.00 6.00 8.00 10.00 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 190 170 1.0E+00 150 ID=-2A 1.0E-01 130 125°C -IS (A) RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 110 90 125°C 1.0E-02 1.0E-03 25°C 70 1.0E-04 50 25°C 1.0E-05 30 1.0E-06 10 0 2 4 6 8 0.0 10 WEITRON http://www.weitron.com.tw 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/5 03-Sep-2013 WTC3401 Typical Electrical Characteristics 1400 5 VDS=-15V ID=-4A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 Ciss 800 600 400 Coss 1 Crss 200 0 0 0 2 4 6 8 10 12 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 5 10 15 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C 40 TJ(Max)=150°C TA=25°C 10µs RDS(ON) 10.0 limited 30 100µs Power (W) -ID (Amps) 20 1ms 0.1s 10ms 1.0 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance WEITRON http://www.weitron.com.tw 4/5 03-Sep-2013 WTC3401 SOT-23 Outline Dimension SOT-23 A B TOP VIEW Dim A B C D E G H J K L M C D E G H K J L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 5/5 03-Sep-2013