10N60/10N60F

10N60/10N60F
Surface Mount N-Channel Power MOSFET
DRAIN CURRENT
P b Lead(Pb)-Free
10 AMPERES
Description:
The WEITRON 10N60/10N60F is a high voltage and high current
power MOSFET, designed to have better characteristics, such
as fast switching time, low gate charge, low on-state resistance
and have rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PMW motor controls, high efficient DC to DC converters
and bridge circuits.
DRAIN SOURCE VOLTAGE
600 VOLTAGE
2 DRAIN
TO-220
Features:
* Low Crss
* Fast Switching
* 100% Avalanche Tested
1 GATE
3
SOURCE
TO-220F
Maximum Ratings(T
A
=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
30
Continuous Drain Current
ID
10
A
Total Power Dissipation
PD
147
W
RθJA
62.5
˚C/W
TJ
+150
˚C
-55~+150
˚C
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
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Tstg
1/5
Unit
V
8-Jul-2014
10N60/10N60F
Electrical Characteristics (TA = 25℃
Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID =250µA
V(BR) DSS
600
-
-
Gate-Threshold Voltage (note1)
VDS =VGS, ID =250µA
VGS(th)
2.0
-
4.0
Gate-Body Leakage Current (note1)
VDS =0V, VGS =±30V
IGSS
-
-
±100
nA
Zero Gate Voltage Drain Current
VDS =600V, VGS =0V
IDSS
-
-
10
µA
R DS(on)
-
-
1
Ω
Drain-Source On-State Resistance (note1)
VGS =10V, ID =5A
Input Capacitance
VDS =25V,VGS =0V, f =1MHz
Ciss
-
1430
-
Output Capacitance
VDS =25V,VGS =0V, f =1MHz
Coss
-
117
-
Reverse Transfer Capacitance
VDS =25V,VGS =0V, f =1MHz
Crss
-
2.2
-
Turn-On Delay Time
VDD=325V,ID=10A, RG=25Ω
td(on)
-
46
-
Rise Time
VDD=325V,ID=10A, RG=25Ω
tr
-
74
-
Turn-Off Delay Time
VDD=325V,ID=10A, RG=25Ω
td(off)
-
340
-
Fall Time
VDD=325V,ID=10A, RG=25Ω
tf
-
66
-
VSD
-
-
1.4
Forward on Voltage(note1)
VGS =0V, IS=10A
V
pF
ns
V
Notes:
1. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤2%.
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8-Jul-2014
10N60/10N60F
Typical Characteristics
Transfer Characteristics
Output Characteristics
12
10
Pulsed
VDS=50V
VGS= 6V、 8V、10V
10
(A)
(A)
8
DRAIN CURRENT
6
ID
VGS=5V
ID
DRAIN CURRENT
Pulsed
4
2
0
10
20
30
DRAIN TO SOURCE VOLTAGE
VDS
Ta=100℃
6
Ta=25℃
4
2
VGS=4.5V
0
8
0
40
0
(V)
1
2
3
4
5
GATE TO SOURCE VOLTAGE
VGS
6
RDS(ON)—— VGS
RDS(ON) —— ID
1.2
7
Ta=25℃
Pulsed
(Ω)
VGS=10V
RDS(ON)
0.8
ON-RESISTANCE
RDS(ON)
ON-RESISTANCE
Pulsed
ID=5A
6
(Ω)
1.0
0.6
0.4
0.2
0.0
7
(V)
5
Ta=100℃
4
Ta=25℃
3
2
1
1
2
4
6
DRAIN CURRENT
8
ID
0
10
2
(A)
4
6
8
10
GATE TO SOURCE VOLTAGE
VGS
12
(V)
Threshold Voltage
IS —— VSD
10
5
(V)
4
VTH
1
Ta=100℃
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
Pulsed
0.1
Ta=25℃
0.01
1E-3
0.0
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
WEITRON
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1.0
ID=250uA
3
2
1
0
25
1.2
VSD (V)
50
75
JUNCTION TEMPERATURE
3/5
100
TJ
125
(℃)
8-Jul-2014
10N60/10N60F
TO-220 Outline Dimensions
D
C1
Ø
F
Unit:mm
A
Dim
A
A1
B
B1
C
C1
D
E
E1
G
G1
F
H
L
L1
H
E1
E
L
B1
L1
A1
B
G
C
G1
Φ
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TO-220
M in
M ax
4.67
4.47
2.82
2.52
0.91
0.71
1.37
1.17
0.53
0.31
1.37
1.17
10.31
10.01
8.90
8.50
12.06
12.46
2.54 TYP
4.98
5.18
2.89
2.59
0.30
0.00
13.4
13.8
3.96
3.56
3.935
3.735
8-Jul-2014
10N60/10N60F
TO-220F Outline Dimensions
Unit:mm
TO-220F
Dim
A
A1
A2
A3
b
b1
b2
c
D
E
e
F
Ф
h
h1
h2
L
L1
L2
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Min.
4.300
Max.
4.700
1.300 REF.
2.800
3.200
2.500
2.900
0.500
0.750
1.100
1.350
1.500
1.750
0.500
0.750
9.960
10.360
14.800
15.200
2.540 TYP.
2.700 REF.
3.500 REF.
0.000
0.300
0.800 REF.
0.500 REF.
28.400
28.000
1.700
1.900
1.900
2.100
8-Jul-2014