2N60P - Weitron

2N60
Surface Mount N-Channel Power MOSFET
DRAIN CURRENT
P b Lead(Pb)-Free
2 AMPERES
DRAIN SOURCE VOLTAGE
600 VOLTAGE
Description:
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
D-PAK3/(TO-251)
2 DRAIN
Features:
*
*
*
*
*
D-PAK/(TO-252)
2.0A, 600V,RDS(ON) =5.0 Ohms @VGS =10V
Low gate charge
1 GATE
Low Crss
Fast switching
Improved dv/dt capability
Maximum Ratings(T
A
3
TO-220
SOURCE
TO-220F
=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
30
Avalanche Current - (Note 1)
I AR
2.0
Continuous Drain Current
ID
2.0
Pulsed Drain Current, TP Limited by TJMAX - (Note 1)
IDM
8.0
Avalanche Energy, Single Pulsed (Note 2)
E AS
140
mJ
Avalanche Energy, Repetitive, Limited by TJMAX
E AR
4.5
mJ
dv/dt
4.5
V/ns
PD
44
23
34
0.35
0.18
0.27
W
TL
300
˚C
TJ,Tstg
-55~+150
˚C
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation
2N60P(TC=25˚C)
2N60F(T C=25˚C)
2N60I/D(TC=25˚C)
2N60P(Derate above 25°C)
2N60F(Derate above 25°C)
2N60I/D(Derate above 25°C)
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Operating Junction and Storage Temperature Range
Unit
V
A
* Drain current limited by maximum junction temperature.
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2N60
Electrical Characteristics (TA = 25℃
Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
BVDSS
600
-
-
VGS(Th)
2.0
-
4.0
IGSS
-
-
100
-100
-
-
10
-
-
100
RDS(on)
-
4.0
5.0
Ω
gfs
-
2.25
-
S
∆BV DSS
/∆TJ
-
0.4
-
V/˚C
Ciss
-
320
380
Coss
-
30
45
Crss
-
3
5.6
Turn-on Delay Time
VDD =300V,ID =2.0A,R G=25Ω(Note 4, 5)
td(on)
-
13
30
Turn-on Rise Time
VDD =300V,ID =2.0A,R G=25Ω(Note 4, 5)
tr
-
12
60
Turn-off Delay Time
VDD =300V,ID =2.0A,R G=25Ω(Note 4, 5)
td(off)
-
73
100
Turn-off Fall Time
VDD =300V,ID =2.0A,R G=25Ω(Note 4, 5)
tf
-
14.3
70
Total Gate Charge
VDS =480V,ID =7.5A,VGS =10V(Note 4, 5)
Qg
-
9.3
13
Gate-Source Charge
VDS =480V,ID =7.5A,VGS =10V(Note 4, 5)
Qgs
-
2.0
-
Gate-Drain Change
VDS =480V,ID =7.5A,VGS =10V(Note 4, 5)
Qgd
-
3.3
-
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
@V GS=0,ID=250μA
@V DS=VGS,ID=250μA
Gate-Source Leakage current
[email protected] GS=30V,V DS=0V
[email protected] GS=-30V,VDS=0V
Drain-SourceLeakage Current(Tj=25˚C) @VDS=600V,VGS=0
Drain-SourceLeakage Current(Tj=125˚C) @VDS=480V,VGS=0
Drain-Source On-State Resistance @VGS=10V,I D=1.0A
Forward Transconductance @VDS=50V,I D=1.0A(Note 4)
Breakdown Voltage Temperature Coefficient
I D =250 µA, Referenced to 25°C
IDSS
V
nA
μA
Dynamic
Input Capacitance
Output Capacitance
@VGS=0V,VDS=25V,f=1.0MHz
@VGS=0V,VDS=25V,f=1.0MHz
Reverse Transfer Capacitance @VGS=0V,VDS=25V,f=1.0MHz
pF
Switching
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12-Apr-2011
2N60
Electrical Characteristics (TA = 25℃
Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VSD
-
-
1.4
V
Maximum Continuous Drain-Source Diode Forward Current
IS
-
-
2.0
A
Maximum Pulsed Drain-Source Diode Forward Current
I SM
-
-
8.0
A
Reverse Recovery Time @VGS=0V,IS=7.5A,dlF/dt=100A/µs (Note 4)
T rr
-
230
-
ns
Reverse Recovery Charge
@VGS=0V,IS=7.5A,dlF/dt=100A/µs(Note 4)
Q rr
-
1.0
-
µC
Source-Drain Diode Characteristics
Drain-Source Diode Forward Voltage
@VGS=0V,IS=7.5A
Thermal Data
Characteristic
Junction-to-Ambient
Junction-to-Case
2N60P
2N60F
2N60I
2N60D
2N60P
2N60F
2N60I
2N60D
Symbol
Value
Unit
RJA
62.5
120
112
112
°C/W
RJC
2.26
5.56
3.7
3.7
°C/W
Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 30mH, IAS = 2.58A, VDD = 123V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.4A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Ordering Information
Order Number
Pin Assignment
Packing
Package
1
2
3
2N60P
TO-220
G
D
S
Tube
2N60F
TO-220F
G
D
S
Tube
2N60I
D-PAK3/TO-251
G
D
S
Tube
D-PAK/TO-252
G
D
S
Tube
2N60D
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2N60
Test Circuits And Waveforms
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* I SD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
I FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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2N60
Test Circuits And Waveforms(cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
t D(ON )
Pulse Width ≤ 1μs
tD (OFF)
tF
tR
Duty Factor ≤0.1%
Fig. 2A Switching Test Circuit
Same Type
as D.U.T.
50kΩ
12V
0.2 μF
Fig. 2B Switching Waveforms
QG
10V
0.3 μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
10V
VDD
D.U.T.
tp
IAS
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
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Fig. 4B Unclamped Inductive Switching Waveforms
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2N60
Typical Characteristics
Transfer Characteristics
On-Region Characteristics
V GS
15.0V
10 .0V
8 .0V
7 .0V
6 .5V
6 .0V
Bottorm :
5.5V
VDS=50V
250 μs Pulse Test
Drain Current, I D (A)
100
10
-1
10
-2
Drain Current, ID (A)
Top:
250μs Pulse Test
TC=25°C
10
-1
10
85 °C
0
10
-20 °C
-1
10
2
1
0
25 °C
10
4
Drain-Source Voltage, VDS (V)
VGS=10V
VGS=20V
8
6
4
2
3
2
1
4
5
10
0
125 °C
6
0.2
Drain Current, ID (A)
Ciss
200
Crss
VGS=0V
f = 1MHz
-1
100
10
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10
1.2
1.4
1.6
(V)
VDS=300V
VDS=480V
8
6
4
2
ID=2.4A
0
101
Drain-Source Voltage, V
1.0
VDS=120V
C oss
0
0.8
12
Ciss=C GS+CGD
(CDS=shorted)
Coss=C DS+CGD
Crss=CGD
300
100
0.6
Gate Charge vs. Gate Charge Voltage
Gate-Source Voltage, VGS (V)
Capacitance (pF)
400
0.4
Source-Drain Voltage, VSD (V)
Capacitance vs. Drain-Source Voltage
500
25°C
10-1
0
0
10
VGS=0V
250 μs Pulse Test
TJ=25 °C
10
8
Bo dy Dio de Fo rwa rd Vo ltag e Va riati onvs.
Source Current and Temperature
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance, R DS(ON) ( Ω )
On-Resistance Variation vs. Drain Current and
Gate Voltage
12
6
Gate-Source Voltage, VGS (V)
0
2
4
6
8
1
0
Total Gate Charge, Q (nC)
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12-Apr-2011
2N60
Typical Characteristics
1.2
On -Resistance vs. Temperature
VGS=10V
ID=250ӴA
Drain-Source On-Resistance,
RDS(ON) (Normalized)
Drain-Source Breakdown Voltage,
VDSS (Normalized)
Breakdown Voltage vs. Temperature
1.1
1.0
0.9
0.8
-100 -50
50
0
100
2.0
1.5
1.0
0.5
0.0
-100 -50
200
150
3.0 V =10V
GS
ID=4.05A
2.5
Junction Temperature, TJ (ć)
10 1
Drain Current, ID (A)
Drain Current, ID (A)
100
200
150
2.0
Operation in This Area
is Limited by RDS(on)
100Ӵs 10Ӵs
1ms
10m
Ds
C
100
10 -2
50
Max. Drain Current vs. Case Temperature
Max. Safe Operating Area
10 -1
0
Junction Temperature, T J (ć)
TC=25ć
TJ=125ć
Single Pulse
1.5
1.0
0.5
0.0
100
101
102
103
25
50
75
100
125
150
Case Temperature, TC (ć)
Drain-Source Voltage, VDS (V)
Thermal Response, ӰJC (t)
Thermal Response
10 0
D=0.5
/W Max.
JC (t) = 2.78
Duty Factor, D=t1/t2
TJM -TC=PDM× JC (t)
0.2
0.1
0.05
-1
10
0.02
PDM
0.01
t1
Single pulse
t2
-5
-4
10
10
-3
10
-2
10
10
-1
0
10
1
10
Square Wave Pulse Duration, t1 (s)
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2N60
TO-220 Outline Dimensions
Unit:mm
TO-220
A
D
C1
Dim
A
A1
B
B1
C
C1
D
E
E1
G
G1
F
H
L
L1
Ø
F
H
E1
E
B1
L1
A1
L
B
G
C
G1
Φ
M in
M ax
4.67
4.47
2.82
2.52
0.91
0.71
1.37
1.17
0.53
0.31
1.37
1.17
10.31
10.01
8.90
8.50
12.06
12.446
2.54 TYP
4.98
5.18
2.89
2.59
0.30
0.00
13.4
13.8
3.96
3.56
3.93
3.73
TO-220F Outline Dimensions
Unit:mm
TO-220F
Symbol Dimension 1
A
3.3±0.15
B
2.55±0.20
C
4.72±0.2
D
1.47MAX
L
15.75±0.30
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Dimension 2
2.70±0.75
3.0±0.20
4.5±0.20
1.75MAX
15±0.30
12-Apr-2011
2N60
TO-251 Outline Dimensions
unit:mm
TO-251
E
A
G
4
H
B
1
2
Dim
A
B
C
D
E
G
H
J
K
L
M
N
J
3
M
N
K
D
C
L
M in
6 .4 0
6 .8 0
0 .5 0
2 .2 0
0 .4 5
1 .0 0
5 .4 0
0 .4 5
0 .9 0
6 .5 0
-
M ax
6 .8 0
7 .2 0
0 .8 0
2 .3 0
2 .5 0
0 .5 5
1 .6 0
5 .8 0
0 .6 9
1 .5 0
0 .9 0
1 . Em it t er
2 . Base
3 . Collect or
TO-252 Outline Dimensions
unit:mm
E
TO-252
A
G
4
H
Dim
A
B
C
D
E
G
H
J
K
L
M
J
1
2
3
B
M
K
D
C
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L
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Min
6.40
9.00
0.50
2.20
0.45
1.00
5.40
0.30
0.70
0.90
Max
6.80
10.00
0.80
2.30
2.50
0.55
1.60
5.80
0.64
1.70
1.50
12-Apr-2011