8N60F - Weitron

8N60
Surface Mount N-Channel Power MOSFET
DRAIN CURRENT
P b Lead(Pb)-Free
8 AMPERES
Description:
The WEITRON 8N60 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PMW motor controls, high efficient DC to DC converters
and bridge circuits.
DRAIN SOURCE VOLTAGE
600 VOLTAGE
2 DRAIN
TO-220
Features:
* 8.0A, 600V,RDS(ON) =1.2 Ohms @VGS =10V
* Ultra low gate charge
1 GATE
* Low reverse transfer capacitance
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
Maximum Ratings(T
A
3
SOURCE
TO-220F
=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
30
Avalanche Current - (Note 1)
I AR
8.0
Continuous Drain Current @TC = 25°C
@TC = 100°C
ID
8.0
4.6
Pulsed Drain Current, TP Limited by TJMAX - (Note 1)
IDM
28
Avalanche Energy, Single Pulsed (Note 2)
E AS
624
mJ
Avalanche Energy, Repetitive (Note 1)
E AR
14.7
mJ
dv/dt
4.5
V/ns
PD
147
48
W
TJ
+150
˚C
Topr,Tstg
-55~+150
˚C
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation
TO-220
TO-220F
Junction Temperature
Operating and Storage Temperature
Unit
V
A
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
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8N60
Electrical Characteristics (TA = 25℃
Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
BVDSS
600
-
-
VGS(Th)
2.0
-
4.0
IGSS
-
-
100
-100
nA
IDSS
-
-
10
μA
RDS(on)
-
1.0
1.2
Ω
∆BV DSS
/∆TJ
-
0.7
-
V/˚C
Ciss
-
1095
-
Coss
-
93
-
Crss
-
12
-
Turn-on Delay Time
VDD =300V,ID =7.5A,R G=25Ω(Note 4, 5)
td(on)
-
15
-
Turn-on Rise Time
VDD =300V,ID =7.5A,R G=25Ω(Note 4, 5)
tr
-
58
-
Turn-off Delay Time
VDD =300V,ID =7.5A,R G=25Ω(Note 4, 5)
td(off)
-
80
-
Turn-off Fall Time
VDD =300V,ID =7.5A,R G=25Ω(Note 4, 5)
tf
-
61
-
Total Gate Charge
VDS =480V,ID =7.5A,VGS =10V(Note 4, 5)
Qg
-
26.8
-
Gate-Source Charge
VDS =480V,ID =7.5A,VGS =10V(Note 4, 5)
Qgs
-
5.1
-
Gate-Drain Change
VDS =480V,ID =7.5A,VGS =10V(Note 4, 5)
Qgd
-
12
-
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
@V GS=0,ID=250μA
@V DS=VGS,ID=250μA
Gate-Source Leakage current
[email protected] GS=30V,V DS=0V
[email protected] GS=-30V,VDS=0V
Drain-SourceLeakage Current(Tj=25˚C) @VDS=600V,VGS=0
Drain-Source On-State Resistance @VGS=10V,I D=4.0A
Breakdown Voltage Temperature Coefficient
I D =250 µA, Referenced to 25°C
V
Dynamic
Input Capacitance
Output Capacitance
@VGS=0V,VDS=25V,f=1.0MHz
@VGS=0V,VDS=25V,f=1.0MHz
Reverse Transfer Capacitance @VGS=0V,VDS=25V,f=1.0MHz
pF
Switching
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01-Apr-2011
8N60
Electrical Characteristics (TA = 25℃
Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VSD
-
-
1.4
V
Maximum Continuous Drain-Source Diode Forward Current
IS
-
-
8.0
A
Maximum Pulsed Drain-Source Diode Forward Current
I SM
-
-
28
A
Reverse Recovery Time @VGS=0V,IS=7.5A,dlF/dt=100A/µs (Note 4)
T rr
-
365
-
ns
Reverse Recovery Charge
@VGS=0V,IS=7.5A,dlF/dt=100A/µs(Note 4)
Q rr
-
3.4
-
µC
Source-Drain Diode Characteristics
Drain-Source Diode Forward Voltage
@VGS=0V,IS=8.0A
Thermal Data
Characteristic
Symbol
Value
Unit
Junction-to-Ambient
TO-220
TO-220F
RJA
62.5
120
°C/W
Junction-to-Case
TO-220
TO-220F
RJC
0.85
2.6
°C/W
Note: 1. Repetitive Rating : Pulse width limited by TJ
2. L = 30mH, IAS = 5.64A, VDD = 185V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7.5A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Ordering Information
Order Number
Pin Assignment
Packing
Package
1
2
3
8N60P
TO-220
G
D
S
Tube
8N60F
TO-220F
G
D
S
Tube
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8N60
Test Circuits And Waveforms
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* I SD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
I FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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8N60
Test Circuits And Waveforms(cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
t D(ON )
tD (OFF)
tF
tR
Fig. 2A Switching Test Circuit
Same Type
as D.U.T.
50kΩ
12V
0.2 μF
Fig. 2B Switching Waveforms
QG
10V
0.3 μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
10V
VDD
D.U.T.
tp
IAS
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
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Fig. 4B Unclamped Inductive Switching Waveforms
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8N60
Typical Characteristics
Body Diode Forward Voltage vs. Source
Current
6
10
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance, RDS(ON)
(ohm)
On-Resistance Variation vs. Drain Current
and Gate Voltage
5
VGS=10V
4
3
VGS=20V
2
1
0
Note: TJ=25 °C
5
0
10
15
20
Drain Current, ID (A)
150°C
25 °C
1
Notes:
1. VGS=0V
2. 250µs Test
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage, VSD (V)
Capacitance Characteristics
(Non-Repetitive)
1900
1700
Gate Charge Characteristics
12
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
10
Ciss
1500
1300
VDS=300V
8
1100
Coss
900
700
4
2
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Note: ID=8A
0
0
10
5
10
15
20
25
30
Total Gate Charge, QG (nC)
Drain-SourceVoltage, VDS (V)
WEITRON
VDS=120V
6
Crss
500
Notes:
300 1. V =0V
GS
100 2. f = 1MHz
0
0.1
1
VDS=480V
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8N60
Typical Characteristics
Breakdown Voltage Variation vs.
Temperature
On-Resistance Junction Temperature
3.0
1.2
2.5
1.1
2.0
1.0
1.5
1.0
0.9
Note:
1. VGS=0V
2. ID=250µA
0.8
-100
0.0
-100
-50
0
50 100 150 200
Junction Temperature, TJ (℃)
-50 0
50 100 150 200
Junction Temperature, TJ (℃)
Maximum Drain Current vs. Case
Temperature
Maximum Safe Operating Area
100
Note:
1. VGS=10V
2. ID=4A
0.5
10
Operation in This Area is Limited by RDS(on)
Drain Current, ID (A)
Drain Current, ID (A)
100µs
100µs
10
1ms
DC
1
10ms
Notes:
1. TJ=25℃
2. TJ=150℃
3. Single Pulse
8
6
4
2
0.1
0
1
25
10
100
1000
Drain-Source Voltage, VDS (V)
50
75
100
125
150
Case Temperature, TC (℃)
Transient Thermal Response
Curve
1
D=0.5
D=0.2
D=0.1
0.1 D=0.05
0.02
0.01
Single pulse
0.01
10-5
Notes:
1. θJC (t) = 0.85℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
10-4 10-3 10-2 10-1 100
101
Square Wave Pulse Duration, t1 (sec)
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8N60
TO-220 Outline Dimensions
Unit:mm
TO-220
A
D
C1
Dim
A
A1
B
B1
C
C1
D
E
E1
G
G1
F
H
L
L1
Ø
F
H
E1
E
B1
L1
A1
L
B
G
C
G1
Φ
M in
M ax
4.67
4.47
2.82
2.52
0.91
0.71
1.37
1.17
0.53
0.31
1.37
1.17
10.31
10.01
8.90
8.50
12.06
12.446
2.54 TYP
4.98
5.18
2.89
2.59
0.30
0.00
13.4
13.8
3.96
3.56
3.93
3.73
TO-220F Outline Dimensions
Unit:mm
TO-220F
Symbol Dimension 1
A
3.3±0.15
B
2.55±0.20
C
4.72±0.2
D
1.47MAX
L
15.75±0.30
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Dimension 2
2.70±0.75
3.0±0.20
4.5±0.20
1.75MAX
15±0.30
01-Apr-2011