B120H thru B1200H Surface Mount Schottky Barrier Rectifiers P b Lead(Pb)-Free Features: * Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance * Low profile surface mounted application in order to optimize board space * Low power loss, high efficiency * High current capability, low forward voltage drop * High surge capability * Guarding for overvoltage protection * Ultra high-speed switching * Silicon epitaxial planar chip, metal silicon junction * Lead-free parts meet environmental standards of MIL-STD-19500/228 REVERSE VOLTAGE 20 TO 200 VOLTS FORWARD CURRENT 1.0 AMPERES SOD-123H Mechanical Data: * Epoxy : UL94-V0 rated flame retardant * Case : Molded plastic, JEDEC SOD-123H * Terminals : Plated terminals, solderable per MIL-STD-750, Method 2026 * Polarity : Indicated by c athode band * Mounting Position : Any * Weight : Approximated 0.011 gram SOD-123H Outline Dimension B unit:mm C SOD-123H Dim A B C E H J A E J H H WEITRON http://www.weitron.com.tw 1/3 Min Max 1.40 1.80 3.30 3.70 2.70 0.60 0.30(TYP) 3.10 0.80(TYP) 1.00 05-Oct-2012 B120H thru B1200H MAXIMUM RATING Characteristics Symbol B120H B130H B140H B150H B160H B180H B1100H B1150H B1200H Unit Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 80 100 150 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V VR 20 30 40 50 60 80 100 150 200 V 0.90 0.92 V Continuous Reverse Voltage Maximum Instantaneous @T A=25°C Maximum Average Forward (Fig.1) VF 0.5 0.7 0.85 IO 1.0 A IFSM 30 A Peak Forward Surge Current 8.3 ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) Maximum DC Reverse Current @TA=25˚C At Rated DC Blocking Voltage @TA=125˚C 0.5 IR mA 10 Thermal Resistance Junction to Case RθJC 40 ˚C/W Diode Junction Capacitance f=1MHz and Applied 4V DC Reverse Voltage CJ 120(TYP) pF Operating Temperature Range TJ Storage Temperature Range -55 to+125 -55 to+150 -65 to+175 TSTG ˚C ˚C Device Marking B120H = 12, B130H = 13, B140H = 14, B150H = 15, B160H = 16, B180H = 18, B1100H = 10 B1150H = 115, B1200H = 120 WEITRON http://www.weitron.com.tw 2/3 05-Oct-2012 B120H thru B1200H 0.4 0.2 0 0 20 40 60 80 100 120 140 160 180 200 LEAD TEMPERATURE,(˚C) FIG.1 Typical Forward Current Derating Curve PEAK FORWARD SURGE CURRENT,(A) 25 Tj=25 ºC 16 0H B1 40 H 3.0 0H 10 1 -B H 80 0H 20 B1 1 -B 1.0 0H 15 B1 Tj=25°C Pulse Width 300us 1% Duty Cycle 0.1 0.01 0.1 0.3 8.3ms Single Half Sine Wave JEDEC method 20 10 -B 0H 20 B1 H~ 50 H B1 40 B1 H~ 20 B1 0.6 H 0.8 50 50 1.0 B1 20 H- INSTANTANEOUS FORWARD CURRENT,(A) 1.2 B1 AVERAGE FORWARD CURRENT,(A) RATINGAND CHARACTERISTIC CURVES 0.5 0.7 0.9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) FIG.2 Typical Forward Characteristics 15 10 5 0 1 5 50 10 100 NUMBER OF CYCLES AT 60Hz 100 REVERSE LEAKAGE CURRENT, (mA) FIG.3 Maximum Non-Repetitive Forward Surge Current JUNCTION CAPACITANCE,(pF) 350 300 250 200 150 100 10 1.0 Tj=75 C .1 Tj=25 C 50 0 .01 .05 .1 .5 1 5 10 50 100 40 60 80 100 120 140 FIG.5 Typcial Reverse Characteristics FIG.4 Typical Junction Capacitance WEITRON 20 PERCENT OF RATED PEAK REVERSE VOLTAGE(%) REVERSE VOLTAGE,(V) http://www.weitron.com.tw .01 0 3/3 05-Oct-2012