2SB1424 - Weitron

2SB1424
Epitaxial Planar PNP Transistors
SOT-89
P b Lead(Pb)-Free
1
1. BASE
2. COLLECTOR
3. EMITTER
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25%C )
Rating
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-20
Vdc
Collector-Emitter Voltage
VCEO
-20
Vdc
Emitter-Base Voltage
VEBO
-6
Vdc
IC
-3
A(DC)
I CP
-5
A (Pulse)*
PD
0.6
W
Tj , Tstg
150, -55 to +150
%C
Collector Current
Collector Power Dissipation
Junction Temperature, Storage Temperature
* Single pulse Pw = 10ms
ELECTRICAL CHARACTERISTICS (Ta=25%C unless otherwise noted )
Min
Parameter
Symbol
Typ
Max
Unit
Collector-Base Breakdown Voltage( Ic=-50mA )
BV CBO
-20
-
-
V
Collector-Emitter Breakdown Voltage( Ic=-1mA )
BV CEO
-20
-
-
V
Emitter-Base Breakdown Voltage ( IE =-50mA )
BVEBO
-6
-
-
V
Collector Cutoff Current( VCB =-20V )
ICBO
-
-
-0.1
mA
Emitter Cutoff Current( VEB=-5V )
IEBO
-
-
-0.1
mA
WEITRON
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2SB1424
ELECTRICAL CHARACTERISTICS (Ta=25%C unless otherwise noted ) (Countinued)
Min Typ Max Unit
Parameter
Symbol
Conditions
DC Current Transfer Ratio
VCE(sat)
-
-
-0.5
V
Ic / IB =-2A / -0.1A
Collector-Emitter Saturation Voltage
h FE
120
-
390
-
Vc E =-2V, Ic = -0.1A
Transition Frequency
fT
-
240
-
MHz Vc E =-2V, I E = 0.5A, f=100MHz
Output Capacitance
Cob
-
35
-
pF
VCB=-10V, I E =0A, f=1MHz
CLASSIFICATION OF hFE
Marking
AEQ
AER
Rank
Q
R
Range
120-270
180-390
ELECTRICAL CHARACTERISTIC CURVES
WEITRON
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2SB1424
ELECTRICAL CHARACTERISTIC CURVES
WEITRON
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2SB1424
SOT-89 Outline Dimensions
E
G
A
H
C
J
B
K
L
WEITRON
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unit:mm
D
Dim
A
B
C
D
E
G
H
J
K
L
SOT-89
Min
Max
1.600
1.400
0.520
0.320
0.560
0.360
0.440
0.350
4.600
4.400
1.800
1.400
2.600
2.300
4.250
3.940
1.500TYP
3.100
2.900