1N4148/1N4448 Axial Lead Switching Diodes SMALL SIGNAL SWITCHING DIODES 150 m AMPERES 100 VOLTS Features: *Silicon Epitaxial Planner Diode *Fast Switching Diodes *500 mW Power Dissipation Mechanical Data: *Case : DO-35 Glass Case *Weight : Approx 0.13 gram DO-35 DO-35 Outline Dimensions Unit:mm C D A B A A B C D DIM Min Max Min Max Min Max Min Max DO-35 26.0 - - 4.20 - 0.55 - 2.0 WEITRON http//www.weitron.com.tw 1N4148/1N4448 Maximum Ratings ( TA=25 C Unless otherwise noted) Symbol 1N4148/ 1N4448 Unit Non-Repetitive Peak Voltage VRM 100 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VPWM VRWM VR 75 V IO 150 mA IFSM 2.0 A Pd 500 mW R θJA 300 K/W T J ,T S T G -65 to +175 C Characteristic Average Rectified Output Current (1) Non-Repetitive Peak Forward Surge Current @t=1.0us Power Dissipation Thermal Resistance Junction to Ambient Operating and Strorage Temperature Range Electrical Characteristics Characteristic Reverse Breakdown Voltage IR= 100 ua ( TA=25 C Unless otherwise noted) Symbol Min V(BR)R 100 Max - Unit V Forward Voltage IF=10 mA 1N4148 1N4448 IF=5 mA IF=100 mA VF 0.62 Leakage C urrent VR=20V VR=75V VR=75V, Tj=150 C IR - 25 5 50 nA Junction Capacitance Cj - 4 PF Reverse Recovery Time IF=10 mA, IR=1mA, VR=6V, RL=100 Ω Trr - 4 nS Note: 1.Valid Provided that device Terminals are Kept at Ambient Temperature. WEITRON http//www.weitron.com.tw 1.0 0.72 1.0 V 1N4148/1N4448 60 Ω nA 104 D.U.T. V R F =2V 2nF 5K Ω VO 103 RECITIFICATION EFFICIENCY MEASUREMENT CIRCUIT 102 10 VR=20V 1 0 100 200 C FIG 1, LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE A 100 V =tp /T T =1/fp IFRM 10 tp n=0 IF R M T 0.1 0.2 1 0.5 0.1 10-4 10-3 10-1 10-2 1 10S tp 10-4 FIG 2, ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION WEITRON http//www.weitron.com.tw 1N4148/1N4448 mA Ω 103 104 102 3 TJ=25 C f=1KHz 10 IF TF TJ=100 C 10 TJ=25 C 102 1 10 10-1 10-2 0 1 2V 1 10-2 10-1 1 102 10 VF mA IF FIG 4, DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT FIG 3, FORWARD CHARACTERISTICS mW 1000 900 1.1 TJ=25 C f=1MHz 800 700 Ptot 1.0 Ctot(VR) 600 Ctot(DV) 500 0.9 400 300 0.8 200 100 0.7 0 0 100 200 C TA FIG 5, ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE WEITRON http//www.weitron.com.tw 0 2 4 6 8 1 0 V VR FIG 6, RELATIVE CAPACITANCE VERSUS VOLTAGE