2SK3019 N-Channel MOSFET P b Lead(Pb)-Free 3 1 2 1. GATE FEATURES: * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75) Maximum Ratings (TA=25°C unless otherwise specified) Characteristic Symbol Values Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V ID 100 mA R θJA 833 °C/W Total Power Dissipation PD 150 mW Junction temperature Range Tj 150 °C Storage Temperature Range Tstg -55 to +150 °C Continuous Drain Current Thermal Resistance, Junction-to-Ambient Device Marking 2SK3019 = KN WEITRON http://www.weitron.com.tw 1/4 03-Jun-2011 2SK3019 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min VDS 30 - - V Vth(GS) 0.8 - 1.5 V Drain-Source Breakdown Voltage VGS=0V,ID=10µA Gate-Threshold Voltage VDS=3V, I D=100µA Typ Max Unit Gate-Source Leakage Current VGS=±20V, VDS=0V IGSS - - ±1 μA Zero Gate Voltage Drain Current VGS=0V, VDS=30V IDSS - - 1 µA RDS(on) - - 8 13 Ω Forward Tranconductance VDS=3V, I D=10mA gfs 20 - - ms Input Capacitance VDS=5V, V GS=0V, f=1MHz Ciss - 13 - Output Capacitance VDS=5V, V GS=0V, f=1MHz Coss - 9 - Reverse Transfer Capacitance VDS=5V, V GS=0V, f=1MHz Crss - 4 - Turn-on Time VDD=5V, R L=500Ω, ID=10mA, V GS =5V, R g =10Ω TD(on) - 15 - Rise Time VDD=5V, R L=500Ω, ID=10mA, V GS =5V, R g =10Ω tr - 35 - Drain-Source On-Resistance VGS=4V, ID=10mA VGS=2.5V, I D=1mA pF SWITCHING T VDD=5V, R L=500Ω, ID=10mA, V GS =5V, R g =10Ω Fall Time VDD=5V, R L=500Ω, ID=10mA, V GS =5V, R g =10Ω WEITRON http://www.weitron.com.tw tr 2/4 ns - 80 - - 80 - 03-Jun-2011 2SK3019 Typical Characteristics Transfer Characteristics Output Characteristics 200 Ta=25℃ 200 3.0V 4.0V VDS=3V Pulsed Ta=25℃ 100 3.5V Pulsed ID 120 DRAIN CURRENT DRAIN CURRENT ID (mA) (mA) 160 2.5V 80 2.0V 40 30 10 3 VGS=1.5V 1 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 5 1 2 3 GATE TO SOURCE VOLTAGE (V) RDS(ON) —— ID RDS(ON) —— VGS 4 (V) VGS 15 50 30 Ta=25℃ Ta=25℃ Pulsed Pulsed RDS(ON) 10 ON-RESISTANCE ON-RESISTANCE RDS(ON) (Ω) (Ω) 12 VGS=2.5V VGS=4V 3 9 6 ID=100mA 3 ID=50mA 1 0 3 1 30 10 DRAIN CURRENT ID 100 200 0 4 8 12 GATE TO SOURCE VOLTAGE (mA) 16 VGS 20 (V) IS —— VSD 200 IS (mA) 100 Ta=25℃ Pulsed 30 SOURCE CURRENT 10 3 1 0.3 0.1 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE WEITRON http://www.weitron.com.tw 0.8 1.0 VSD (V) 3/4 03-Jun-2011 2SK3019 SOT-523 Outline Dimensions Unit:mm SOT-523 A B TOP VIEW Dim A B C D E G H J K L M C D E G H K J WEITRON http://www.weitron.com.tw L M 4/4 Min 0.30 0.70 1.45 0.15 0.80 1.40 0.00 0.70 0.37 0.10 Max 0.50 0.90 1.75 0.50 0.40 1.00 1.80 0.10 1.00 0.48 0.25 03-Jun-2011