WTC2306 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 5.8 AMPERES P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE Features: 2 * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package SOURCE 3 1 2 Applications: SOT-23 * Power Management in Notebook Computer * Portable Equipment * Battery Powered System Maximum Ratings (TA Rating Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V ID 5.8 A Pulsed Drain Current1 IDM 30 A Total Power Dissipation (TA=25°C) PD 1.4 W RθJA 140 °C/W TJ -55~+150 °C Tstg -55~+150 °C Continuous Drain Current Maximum Junction-Ambient2 Operating Junction Temperature Range Storage Temperature Range Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing Device Marking WTC2306 = N06 WEITRON http://www.weitron.com.tw 1/4 08-Apr-2013 WTC2306 Electrical Characteristics (TA=25°C Unless Otherwise Specified) Characteristic Symbol Min Typ Max Unit V(BR)DSS 30 - - V VGS (th) 0.7 - 1.4 V Gate-Source Leakage Current +12V VDS=0V, VGS=- IGSS - - ±100 nA Zero Gate Voltage Drain Current VDS=24V , VGS=0V IDSS - - 1 µA R DS(on) - 45 34 31 62 43 38 mΩ Gate Resistance VGS=0V, VDS=0V, f=1MHz Rg 6 7 7.5 Ω Forward Transconductance VDS=5V, ID=5A gfs 10 15 - S Turn-On Delay Time VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω td(on) - 7 14 nS Rise Time VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω tr - 15 30 nS - 38 76 nS Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=250µA Gate-Source Threshold Voltage VDS=VGS, ID=250µA Drain-Source On-Resistance VGS=2.5V , ID=4.0A VGS=4.5V , ID=5.0A VGS=10V , ID=5.8A Dynamic(3) Turn-O Time VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω t ) Fall Time VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω tf - 3 6 nS Total Gate Charge VDS=15V, ID=5.8A,VGS=4.5V Qg - 11 14.3 nc Gate-Source Charge VDS=15V, ID=5.8A,VGS=4.5V Qgs - 1.6 2.08 nc Gate-Drain Charge VDS=15V, ID=5.8A,VGS=4.5V Qgd - 2.8 3.64 nc Input Capacitance VDS=15V, VGS=0V, f=1MHz Ciss - 513.51 - pF Output Capacitance VDS=15V, VGS=0V, f=1MHz Coss - 80.85 - pF Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHz Crss - 54.87 - pF Drain-Source Diode Forward Voltage VGS=0V, IS=1.0A VSD - - 1.2 V Continuous Source Current (Body Diode) IS - - 2.5 A Notes: Pulse test：Pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Static parameters are based on package level with recommended wire-bonding 3. Guaranteed by design; not subject to production testing WEITRON http://www.weitron.com.tw 2/4 08-Apr-2013 WTC2306 TYPICAL ELECTRICAL CHARACTERISTICS WEITRON http://www.weitron.com.tw 3/4 08-Apr-2013 WTC2306 SOT-23 Outline Dimension SOT-23 Dim A B C D E G H J K L M A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 4/4 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 08-Apr-2013