CS48N78 CS48N78 - Thinki Semiconductor Co.,Ltd.

CS48N78
Pb Free Plating Product
®
Pb
CS48N78
70V,80A N-Channel Trench Process Power MOSFET
General Description
The CS48N78 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged EAS
CS48N78
capability and ultra low RDS(ON) is suitable for PWM, load
(TO-220 HeatSink)
switching especially for E-Bike controller applications.
Features
● VDS=70V;[email protected] VGS=10V;
G
D
S
RDS(ON)<7.2mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
Schematic Diagram
Application
VDS = 70 V
● 48V E-Bike Controller Applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
ID = 80 A
RDS(ON) = 5.9 mΩ
Table 1.
Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
Value
Unit
70
V
VDS
Drain-Source Voltage (VGS=0V)
VGS
Gate-Source Voltage (VDS=0V)
±25
V
ID (DC)
Drain Current (DC) at Tc=25℃
80
A
ID (DC)
Drain Current (DC) at Tc=100℃
56
A
320
A
Peak Diode Recovery Voltage
30
V/ns
Maximum Power Dissipation(Tc=25℃)
100
W
Derating Factor
0.66
W/℃
410
mJ
-55 To 175
℃
IDM (pluse)
dv/dt
PD
EAS
TJ,TSTG
Drain [email protected] Current-Pulsed
Single Pulse Avalanche Energy
(Note 1)
(Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=33V,VG=10V,ID=40.5A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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CS48N78
®
Table 2. Thermal Characteristic
Symbol
RJC
Parameter
Thermal Resistance,Junction-to-Case
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol
Parameter
Conditions
Min
Value
Unit
1.5
℃/W
Typ
Max
Unit
On/Off States
BVDSS
Drain-Source Breakdown Voltage
VGS=0V ID=250μA
70
V
IDSS
Zero Gate Voltage Drain Current(Tc=25℃)
VDS=68V,VGS=0V
1
μA
IDSS
Zero Gate Voltage Drain Current(Tc=125℃)
VDS=68V,VGS=0V
10
μA
IGSS
Gate-Body Leakage Current
VGS=±25V,VDS=0V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250μA
4
V
RDS(ON)
Drain-Source On-State Resistance
7.2
mΩ
2
VGS=10V, ID=40A
5.9
Dynamic Characteristics
gFS
Forward Transconductance
Ciss
Input Capacitance
VDS=10V,ID=15A
VDS=25V,VGS=0V,
f=1.0MHz
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=50V,ID=40A,
VGS=10V
20
S
3483
pF
459
pF
214
pF
82
nC
16.2
nC
36.7
nC
11
nS
13
nS
22
nS
27
nS
Switching Times
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
tf
VDD=30V,ID=2A,RL=15Ω
VGS=10V,RG=2.5Ω
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Characteristics
ISD
Source-Drain Current(Body Diode)
80
A
ISDM
Pulsed Source-Drain Current(Body Diode)
320
A
VSD
Forward On Voltage
(Note 1)
TJ=25℃,ISD=40A,VGS=0V
0.69
TJ=25℃,IF=75A
di/dt=100A/μs
40
nS
81
nC
(Note 1)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-on Time
(Note 1)
0.95
V
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25℃
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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CS48N78
®
Test Circuit
1)E AS Test Circuits
2)Gate Charge Test Circuit:
3)Switch Time Test Circuit:
Rev.05
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CS48N78
®
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
ID (A)
10us
1ms
10ms
DC
IS - Source Current (A)
Figure2. Source-Drain Diode Forward Voltage
RDS(ON)
Figure1. Safe Operating Area
Tc = 25℃
VDS (Volts)
VSD (Volts)
Figure4. Transfer Characteristics
ID (A)
ID (A)
Figure3. Output Characteristics
VDS (Volts)
Figure6. RDS(ON) vs Junction Temperature
RDS(ON) (mΩ)
Figure5. Static Drain-Source On Resistance
VGS (Volts)
ID (A)
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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CS48N78
®
Figure7. BVDSS vs Junction Temperature
Figure8. VGS(th) vs Junction Temperature
Temperature(℃)
Temperature(℃)
Temperature(℃)
Figure10. Capacitance
VGS (Volts)
C Capacitance (pF)
Figure9. Gate Charge Waveforms
Qg Gate Charge (nC)
VDS Drain-Source Voltage (V)
Transient Thermal Impedance
R(t), Normalized Effective
Figure11. Normalized Maximum Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Rev.05
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