TSU45N60 datasheets - Thinki Semiconductor Co.,Ltd.

TSU45N60
®
Pb
TSU45N60
Pb Free Plating Product
45A,60V Typical N-Channel Trench Power MOSFET
General Description
The TSU45N60 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged EAS
capability and ultra low RDS(ON) is suitable for PWM.
Features
● VDS=60V;[email protected] VGS=10V;
RDS(ON)<14 mΩ @ VGS=10V
● Ultra Low On-Resistance
G
D S
TO-251 Top View
● High UIS and UIS 100% Test
Application
Schematic Diagram
VDSS = 60 V
●
Hard Switched and High Frequency Circuits
●
Uninterruptible Power Supply
IDSS = 45 A
RDS(ON) = 11 mΩ
● Inverter/Amplifier Application
● Motor Control Application
Table 1.
Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage (VGS=0V)
60
V
VGS
Gate-Source Voltage (VDS=0V)
±25
V
ID (DC)
Drain Current (DC) at Tc=25℃
45
A
ID (DC)
Drain Current (DC) at Tc=100℃
32
A
180
A
55
W
182
mJ
-55 To 175
℃
IDM (pluse)
Drain [email protected] Current-Pulsed
PD
Maximum Power Dissipation(Tc=25℃)
EAS
Single Pulse Avalanche Energy
TJ,TSTG
(Note 1)
(Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=30V,VG=10V, RG=25Ω
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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TSU45N60
®
Table 2. Thermal Characteristic
Symbol
RJC
Parameter
Thermal Resistance,Junction-to-Case
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol
Parameter
Conditions
Min
Value
Unit
2.7
℃/W
Typ
Max
Unit
On/Off States
BVDSS
Drain-Source Breakdown Voltage
VGS=0V ID=250μA
60
V
IDSS
Zero Gate Voltage Drain Current(Tc=25℃)
VDS=60V,VGS=0V
1
μA
IDSS
Zero Gate Voltage Drain Current(Tc=100℃)
VDS=60V,VGS=0V
5
μA
IGSS
Gate-Body Leakage Current
VGS=±25V,VDS=0V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250μA
4
V
RDS(ON)
Drain-Source On-State Resistance
14
mΩ
2
VGS=10V, ID=40A
11
Dynamic Characteristics
gFS
Forward Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
VDS=10V,ID=15A
18
S
1659
PF
276
PF
Reverse Transfer Capacitance
128
PF
Qg
Total Gate Charge
37.6
nC
Qgs
Gate-Source Charge
6.7
nC
Qgd
Gate-Drain Charge
10
nC
6
nS
6.9
nS
12.5
nS
14.8
nS
VDS=25V,VGS=0V
f=1.0MHz
VDS=30V,ID=15A
VGS=10V
Switching Times
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
tf
VDS=30V,RL=2.5Ω
VGS=10V,RG=3Ω
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Characteristics
ISD
Source-Drain Current(Body Diode)
45
A
ISDM
Pulsed Source-Drain Current(Body Diode)
180
A
VSD
Forward On Voltage
trr
(Note 1)
TJ=25℃,ISD=1A,VGS=0V
0.74
TJ=25℃,IF=15A
di/dt=100A/μs
27
nS
30
nC
(Note 1)
Reverse Recovery Time
(Note 1)
Qrr
Reverse Recovery Charge
ton
Forward Turn-on Time
1
V
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, Starting TJ=25℃
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/5
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TSU45N60
®
Test Circuit
1) EAS Test Circuits
2) Gate Charge Test Circuit:
3) Switch Time Test Circuit:
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 3/5
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TSU45N60
®
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Figure1. Safe Operating Area
Figure2. Source-Drain Diode Forward Voltage
ID (A)
10us
1ms
10ms
DC
VDS (Volts)
Figure3. Output Characteristics
Figure6. RDS(ON) vs Junction Temperature
RDS(ON) (mΩ)
Figure5. Static Drain-Source On Resistance
Figure4. Transfer Characteristics
ID (A)
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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TSU45N60
®
Figure7. BVDSS vs Junction Temperature
Figure8. VGS(th) vs Junction Temperature
Temperature(℃)
Temperature(℃)
Temperature(℃)
Figure10. Capacitance
VGS (Volts)
C Capacitance (pF)
Figure9. Gate Charge Waveforms
Qg Gate Charge (nC)
VDS Drain-Source Voltage (V)
Transient Thermal Impedance
R(t), Normalized Effective
Figure11. Normalized Maximum Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 5/5
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