SF2004GA thru SF2008GA ® Pb SF2004GA thru SF2008GA Pb Free Plating Product 20.0 Ampere Dual Common Anode Super Fast Recovery Diode TO-220AB .196(5.00) .163(4.16) .139(3.55) MIN .054(1.39) .045(1.15) ¬ Case: TO-220AB Heatsink ¬ Epoxy: UL 94V-0 rate flame retardant ¬ Terminals: Solderable per MIL-STD-202 method 208 ¬ Polarity: As marked on body ¬ Mounting position: Any ¬ Weight: 2.24 gram approximately .038(0.96) .019(0.50) .1(2.54) .548(13.93) .624(15.87) .177(4.5)MAX Mechanical Data .50(12.7)MIN .269(6.85) ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Unit : inch (mm) .419(10.66) .387(9.85) .226(5.75) Features .025(0.65)MAX .1(2.54) Case Case Positive Common Cathode Suffix "G" Negative Common Anode Suffix "GA" Case Doubler Tandem Polarity Suffix "GD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL SF2004G SF2004GA SF2004GD SF2006G SF2006GA SF2006GD SF2008G SF2008GA SF2008GD Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V Maximum DC Blocking Voltage VDC 200 400 600 V Maximum Average Forward Rectified 20.0 IF(AV) o Current TC=125 C UNIT A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load IFSM 200 VF 0.98 175 A (JEDEC method) Maximum Instantaneous Forward Voltage @ 10.0 A o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR Maximum Reverse Recovery Time (Note 1) Trr Typical junction Capacitance (Note 2) CJ Operating Junction and Storage Temperature Range TJ, TSTG 1.70 1.30 V 10.0 uA 250 uA 35 nS 70 120 -55 to +150 pF o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ SF2004GA thru SF2008GA ® FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 20 16 10 8 6 4 60 Hz Resistive or Inductive load 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 175 150 SF2004GA 125 100 SF2006GA-SF2008GA 75 50 25 0 0 50 100 150 1 100 NUMBER OF CYCLES AT 60Hz o CASE TEMPERATURE, C FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 15 SF2004GA INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 SF2006GA 10 SF2008GA 0.1 TJ=25 oC PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/