CS64N90 CS64N90 - Thinki Semiconductor Co.,Ltd.

CS64N90
®
Pb
CS64N90
Pb Free Plating Product
85V,92A N-Channel Trench Process Power MOSFET
General Description
CS64N90
CS64N90 series is N-channel MOS Field Effect Transistor
(TO-220 HeatSink)
designed for high current switching applications. Rugged
EAS capability and ultra low RDS(ON) is suitable for PWM,
load switching especially for E-Bike controller applications.
G
D
S
Features
● VDS=85V; [email protected] VGS=10V;
CS64N90F
RDS(ON)<7.45mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
(TO-220F FullPak)
Schematic Diagram
Application
●
●
●
●
●
G
64V E-Bike Controller Applications
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Inverter Application
Amplifier Application
D
S
VDS = 85 V
CS64N90B
ID = 92A
(TO-263/D2PAK)
D
S
RDS(ON) = 6.2 mΩ
G
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage (VGS=0V)
85
V
VGS
Gate-Source Voltage (VDS=0V)
±25
V
ID (DC)
Drain Current (DC) at Tc=25℃
92
A
ID (DC)
Drain Current (DC) at Tc=100℃
64.4
A
368
A
Peak Diode Recovery Voltage
30
V/ns
Maximum Power Dissipation(Tc=25℃)
139
W
Derating Factor
0.93
W/℃
625
mJ
-55 To 175
℃
IDM (pluse)
dv/dt
PD
EAS
TJ,TSTG
Drain [email protected] Current-Pulsed
Single Pulse Avalanche Energy
(Note 1)
(Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=40V,VG=10V,RG=25Ω
B
B
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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CS64N90
®
Table 2. Thermal Characteristic
Symbol
Parameter
RJC
Thermal Resistance,Junction-to-Case
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol
Parameter
Conditions
Min
Value
Unit
1.08
℃/W
Typ
Max
Unit
On/Off States
BVDSS
Drain-Source Breakdown Voltage
VGS=0V ID=250μA
82
V
IDSS
Zero Gate Voltage Drain Current(Tc=25℃)
VDS=82V,VGS=0V
1
μA
IDSS
Zero Gate Voltage Drain Current(Tc=125℃)
VDS=82V,VGS=0V
10
μA
IGSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250μA
4
V
RDS(ON)
Drain-Source On-State Resistance
7.45
mΩ
2
VGS=10V, ID=40A
6.2
Dynamic Characteristics
gFS
Forward Transconductance
Ciss
Input Capacitance
VDS=10V,ID=15A
VDS=25V,VGS=0V,
f=1.0MHz
20
S
5053
PF
442
PF
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
145
PF
Qg
Total Gate Charge
106
nC
Qgs
Gate-Source Charge
19
nC
Qgd
Gate-Drain Charge
47.9
nC
15
nS
18
nS
31
nS
38
nS
VDS=50V,ID=40A,
VGS=10V
Switching Times
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
tf
VDD=30V,ID=40A,RL=15Ω
VGS=10V,RG=2.5Ω
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Characteristics
ISD
Source-drain Current(Body Diode)
92
A
ISDM
Pulsed Source-Drain Current(Body Diode)
368
A
VSD
(Note 1)
Forward On Voltage
TJ=25℃,ISD=40A,VGS=0V
(Note 1)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-on Time
(Note 1)
TJ=25℃,IF=75A
di/dt=100A/μs
0.78
0.95
V
56
nS
113
nC
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25℃
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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CS64N90
®
Test Circuit
1) EAS Test Circuits
2) Gate Charge Test Circuit:
3) Switch Time Test Circuit:
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 3/5
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CS64N90
®
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Figure2. Transfer Characteristics
ID-Drain Current (A)
ID-Drain Current (A)
Figure1. Output Characteristics
VDS Drain-Source Voltage (V)
VGS Gate-Source Voltage (V)
Figure3. Rdson Vs Drain Current
Figure4. Rdson Vs Junction Temperature
Normalized On-Resistance
RDS(ON) On-Resistance (mΩ)
3.0
ID- Drain Current (A)
TJ-Junction Temperature(℃)
Figure6. Source- Drain Diode Forward
IS - Source Current (A)
VGS Gate-Source Voltage (V)
Figure5. Gate Charge
Qg Gate Charge (nC)
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
VSD Source-Drain Voltage (V)
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CS64N90
®
Figure8. Safe Operation Area
ID-Drain Current(A)
C Capacitance (pF)
Figure7. Capacitance vs Vds
VDS Drain-Source Voltage (V)
Figure10. VGS(th) vs Junction Temperature
Normalized BVDSS
Figure9. BVDSS vs Junction Temperature
VDS Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
R(t), Normalized Effective
Transient Thermal Impedance
Figure11. Normalized Maximum Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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