MM60F120B ® Pb MM60F120B Pb Free Plating Product 60 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode TO-247-2L APPLICATION · · · · · · · Cathode(Bottom Side Metal Heatsink) Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS Anode PRODUCT FEATURE · Ultrafast Recovery Time Internal Configuration · Soft Recovery Characteristics Cathode Base Backside · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current GENERAL DESCRIPTION MM60F120B using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS Symbol T C =25°C unless otherwise specified Parameter Test Conditions Values Unit VR Maximum D.C. Reverse Voltage 1200 V V RRM Maximum Repetitive Reverse Voltage 1200 V I F(AV) Average Forward Current 60 A I F(RMS) RMS Forward Current T C =110°C 84 A I FSM Non-Repetitive Surge Forward Current T J =45°C, t=10ms, 50Hz, Sine 500 A PD Power Dissipation 312 W TJ Junction Temperature -40 to +150 °C T STG Storage Temperature Range -40 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m R θJC Thermal Resistance Junction-to-Case 0.4 °C /W 6.0 g T C =110°C Weight ELECTRICAL CHARACTERISTICS Symbol Parameter T C =25°C unless otherwise specified Test Conditions Min. Typ. Max. Unit V R =1200V -- -- 500 µA V R =1200V, T J =125°C -- -- 5 mA I F =60A -- 2.10 -- V I F =60A, T J =125°C -- 1.75 I RM Reverse Leakage Current VF Forward Voltage t rr Reverse Recovery Time I F =1A, V R =30V, di F /dt=-200A/μs -- 40 -- ns t rr Reverse Recovery Time V R =600V, I F =60A -- 90 -- ns I RRM Max. Reverse Recovery Current di F /dt=-200A/μs, T J =25°C -- 7.5 -- A t rr Reverse Recovery Time V R =600V, I F =60A -- 320 -- ns I RRM Max. Reverse Recovery Current di F /dt=-200A/μs, T J =125°C -- 14 -- A Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. V Page 1/3 http://www.thinkisemi.com/ MM60F120B ® 120 500 VR=600V TJ =125°C 100 400 60 trr (ns) IF (A) 80 TJ =125°C 300 200 40 IF=120A IF=60A IF=30A TJ =25°C 100 20 0 0 0 1.5 2.0 3.0 2.5 VF（V） Figure1. Forward Voltage Drop vs Forward Current 0.5 1.0 100 1000 400 600 800 diF/dt（A/μs） Figure2. Reverse Recovery Time vs diF/dt 0 200 10 VR=600V TJ =125°C 80 8 60 6 Qrr (μc) IRRM (A) VR=600V TJ =125°C 40 IF=120A 4 IF=120A IF=60A IF=60A 20 IF=30A 2 IF=30A 0 0 0 400 600 1000 800 diF/dt（A/μs） Figure3. Reverse Recovery Current vs diF/dt 400 600 800 1000 diF/dt（A/μs） Figure4. Reverse Recovery Charge vs diF/dt 200 1.4 0 200 1 1.2 10 ZthJC (K/W) 1.0 Kf 0.8 0.6 IRRM 0.4 trr 0.2 0 0 -1 10 -2 10 -3 Duty 0.5 0.2 0.1 0.05 Single Pulse Qrr 25 50 100 125 150 75 TJ (°C) Figure5. Dynamic Parameters vs Junction Temperature Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. 10 -4 10 -4 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance Page 2/3 http://www.thinkisemi.com/ MM60F120B ® IF trr IRRM dIF/dt 0.25 IRRM Qrr 0.9 IRRM Fig7. Diode Reverse Recovery Test Circuit and Waveform Dimensions in Millimeters Fig8. Package Outline Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 3/3 http://www.thinkisemi.com/