MUR3060G MUR3060G - Thinki Semiconductor Co.,Ltd.

MUR3060G
®
Pb
MUR3060G
Pb Free Plating Product
30 Ampere Single Glass Passivated Chip Ultrafast Recovery Rectifier Diode
TO-220AC
Features
‹ Glass passivated chip junction EPI wafer
‹ Ultrafast recovery time for high efficiency
‹ Low reverse leakage current
‹ High surge capacity
Unit : inch (mm)
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.139(3.55)
MIN
.054(1.39)
.177(4.5)MAX
.038(0.96)
.019(0.50)
.624(15.87)
.548(13.93)
‹ Case: TO-220AC heatsink
‹ Terminals: Lead solderable per MIL-STD-202, Method 208
‹ Polarity: As marked
‹ Standard packaging: Any
‹ Weight: 2.5 gram approximately
.50(12.7)MIN
.269(6.85)
Mechanical Data
.226(5.75)
.045(1.15)
.025(0.65)MAX
.1(2.54)
.1(2.54)
TO-220AC Heatsink
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
MUR3060G
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
600
V
Maximum RMS Voltage
VRMS
420
V
VDC
600
V
IF(AV)
30.0
A
IFSM
250
A
VF
1.7
V
5.0
uA
100
uA
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
o
Current TC=125 C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 30.0 A
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
IR
Maximum Reverse Recovery Time (Note 1)
Trr
60
nS
Typical junction Capacitance (Note 2)
CJ
120
pF
TJ, TSTG
-55 to +150
Operating Junction and Storage
Temperature Range
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
MUR3060G
®
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
320
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
30
25
20
15
10
5
60 Hz Resistive or
Inductive load
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
280
240
200
160
120
80
40
0
0
50
100
150
1
100
NUMBER OF CYCLES AT 60Hz
o
CASE TEMPERATURE, C
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
1000
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
1.0
MUR3060G
0.1
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ=125 C
100
10
o
TJ=25 C
1
0.1
0
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/