55NF06 - Thinki Semiconductor Co.,Ltd.

55NF06
Pb Free Plating Product
®
55NF06
Pb
N-CHANNEL POWER MOSFET TRANSISTOR
50 AMPERE 60 VOLT
N-CHANNEL POWER MOSFET
„
12
DESCRIPTION
Thinkisemi 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
„
SYMBOL
U55NF06
P55NF06
F55NF06
D55NF06
„
TO-220/TO-220F
3
FEATURES
* RDS(ON) = [email protected] = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
„
12
TO-251/IPAK
3
TO-251/IPAK
TO-220
TO-220F
TO-252/DPAK
12
„ APPLICATION
Auotmobile Convert System
Networking DC-DC Power System
Power Supply etc..
TO-252/DPAK
2.Drain
1.Gate
3.Source
ABSOLUTE MAXIMUM RATINGS
PARAMETER
3
RATINGS
UNIT
60
V
±20
V
TC = 25°C
50
A
Continuous Drain Current
ID
TC = 100°C
35
A
Pulsed Drain Current (Note 2)
IDM
200
A
Single Pulsed (Note 3)
EAS
480
mJ
Avalanche Energy
13
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
7
V/ns
TO-220
120
W
TO-251
Power Dissipation (TC=25°C)
PD
W
90
TO-252
136
W
Junction Temperature
TJ
+150
°C
Operation and Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by TJ
3. L=0.38mH, IAS=50A, VDD=25V, RG=20, Starting TJ=25°C
4. ISD50A, di/dt300A/s, VDDBVDSS, Starting TJ=25°C
Drain-Source Voltage
Gate-Source Voltage
© 2006 Thinki Semiconductor Co.,Ltd.
SYMBOL
VDSS
VGSS
Page 1/6
http://www.thinkisemi.com/
55NF06
„
®
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case „
JA
JC
RATING
62
62
UNIT
°C/W
°C/W
100
1.24
1.28
1.1
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
„
SYMBOL
TO-220
TO-251
TO-252
TO-220
TO-251
TO-252
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
VGS = 0 V, ID = 250 A
VDS = 60 V, VGS = 0 V
VGS = 20V, VDS = 0 V
IGSS
VGS = -20V, VDS = 0 V
ID = 250 A,
ϦBVDSS/ƸTJ
Referenced to 25°C
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 A
VGS = 10 V, ID = 25 A
CISS
COSS
CRSS
VGS = 0 V, VDS = 25 V
f = 1MHz
MIN TYP MAX UNIT
60
10
100
-100
0.07
2.0
18
V
A
nA
nA
V/°C
4.0
23
V
m
900 1220
430 550
80 100
pF
pF
pF
40
100
90
80
30
9.6
10
60
200
180
160
40
ns
ns
ns
ns
nC
nC
nC
1.5
V
50
A
200
A
ELECTRICAL CHARACTERISTICS(Cont.)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 30V, ID =25 A,
Turn-On Rise Time
tR
R
Turn-Off Delay Time
tD(OFF)
G = 50 (Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS = 48V, VGS = 10 V
Gate-Source Charge
QGS
ID = 50A (Note 1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS ANDʳMAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
IS = 50A, VGS = 0 V
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
IS = 50A, VGS = 0 V
dIF / dt = 100 A/s
Reverse Recovery Charge
QRR
54
81
ns
C
Notes: 1. Pulse Test: Pulse Width300s, Duty Cycle2%
2. Essentially independent of operating temperature
Page 2/6
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
55NF06
„
®
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
Page 3/6
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
55NF06
„
®
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RG
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
tp
Time
Fig. 4A Unclamped Inductive Switching Test Circuit ʳ ʳ ʳ Fig. 4B Unclamped Inductive Switching Waveforms
Page 4/6
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
55NF06
Drain Current, ID (A)
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
„
®
On State Current vs.
Allowable Case Temperature
On-Resistance Variation vs.
Drain Current and Gate Voltage
2.5
102
2.0
150°C
1.5
1.0
101
VGS=10V
*Note:
1. VGS=0V
2. 250μs Test
VGS=20V
0.5
25°C
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
0.0
0 20 40 60 80 100 120 140160180 200
Drain Current, ID (A)
Page 5/6
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
55NF06
„
®
TYPICAL CHARACTERISTICS(Cont.)
Drain-Source On-Resistance, RDS(ON),
(Normalized)
Drain-Source Breakdown Voltage,
BVDSS(Normalized)
Breakdown Voltage Variation vs.
Junction Temperature
1.2
1.1
1.0
0.9
*Note:
1. VGS=0V
2. ID=250μA
0.8
-100 -50
0
150 200
50 100
Junction Temperature, TJ (°C)
3.0
On-Resistance Variation vs.
Junction Temperature
2.5
2.0
1.5
1.0
0.5
0.0
*Note:
1. VGS=10V
2. ID=25A
-50
0
50
100
150
Junction Temperature, TJ (°C)
Maximum Drain Current vs.
Case Temperature
Maximum Safe Operating
50
Drain Current, ID (A)
Drain Current , ID,(A)
103 Operation in This
Area by RDS (on)
100μs
1ms
102
10ms
1
10
10ms
*Note:
1. Tc=25°C
2. TJ=150°C
-1 3. Single Pulse
10
100
10-1
40
30
20
10
0
100
101
102
Drain-Source Voltage, VDS (V)
25
75
50
100
125
Case Temperature, TC (°C)
150
Thermal Response, ZJC (t)
Page 6/6
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/