2SD1913 ® Pb 2SD1913 Pb Free Plating Product 60V/3A NPN Low-Frequency Epitaxial Planar Silicon Transistor TO-220FH/ITO-220AB DESCRIPTION ·Complements the 2SB1274. ・High reliability. ・High breakdown voltage. ・Low saturation voltage. ・Wide area of safe operation. Unit:mm COLLECTOR 2 BASE 1 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3 12 TO-220FH Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A ICM Collector current-peak 8 A PC Collector dissipation TC=25℃ 20 W 2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ 2SD1913 ® CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 60 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=∞ 60 V V(BR)EBO Base-emitter breakdown voltage IE=1mA; IC=0 6 V Collector-emitter saturation voltage IC=2A ; IB=0.2A 0.4 1.0 V VBE Base-emitter voltage IC=0.5A ; VCE=5V 0.8 1.0 V ICBO Collector cut-off current VCB=40V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V;IC=0 0.1 mA hFE-1 DC current gain IC=0.5A ; VCE=5V 70 hFE-2 DC current gain IC=3A ; VCE=5V 20 fT Transition frequency IC=0.5A ; VCE=5V 100 MHz Cob Output capacitance IE=0 ; VCB=10V; f=1MHz 40 pF VCEsat 280 hFE-1 classifications Q R S 70-140 100-200 140-280 Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 2/2 http://www.thinkisemi.com/