MURF1520G thru MURF1560G ® Pb MURF1520G thru MURF1560G Pb Free Plating Product 15.0 Ampere Glass Passivated Chip Ultrafast Recovery Rectifier Diode ITO-220AC Features Glass passivated junction/EPI(PG process) Fast recovery time for hight efficiency Low reverse leakage current High surge capacity Unit: mm .419(10.66) .196(5.00) .387(9.85) .163(4.16) .167(3.73) .122(3.10) .118(3.00) .624(15.87) .548(13.93) .269(6.85) Mechanical Data Case: Insulated Plastic TO-220F-2L FullPak Terminals: Lead solderable per MIL-STD-202, Method 208 Polarity: As marked Standard packaging: Any Weight: 0.08 ounces, 1.9 gram approximately .226(5.75) .079(2.00) .038(0.96) .019(0.50) .50(12.7)MIN .177(4.5)MAX 2 .025(0.65)MAX .1(2.54) .1(2.54) TO-220F-2L Maximum Ratings and Electrical Characteristics Ratings at 25oC ambient temperature unless otherwise specified. Parameter Symbol MURF1505G MURF1510G MURF1520G MURF1540G MURF1560G Unit Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 Volts Maximum RMS voltage VRMS 35 70 140 280 420 Volts Maximum DC blocking voltage VDC 50 100 200 400 600 Maximum average forward rectified current at TC=100oC IF(AV) 15.0 Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150.0 Amps Maximum instantaneous forward voltage at 15.0A VF Maximum DC reverse current at rated DC blocking voltage @TJ=25oC @TJ=100oC trr Typical junction capacitance at 4.0V, 1MHz CJ Typical thermal resistance Notes: 1.30 1.70 Volts 5.0 250 IR Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A Operating junction and storage temperature range 0.98 Volts 35 uA nS 60 160 RθJC 3.0 TJ, TSTG -55 to +150 pF o C/W o C 1. Pulse test: Pulse width 300 usec, Duty cycle 2% Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ MURF1520G thru MURF1560G ® RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted) Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/