2A01 thru 2A07 ® Pb 2A01 thru 2A07 Pb Free Plating Product 2.0 Ampere DO-15 Package General Purpose Rectifiers DO-15 Features • Diffused junction • High current capability and low forward voltage drop • Surge overload rating to 70A peak Unit: inch(mm) 1.0(25.4)MIN. .034(.86) .300(7.6) • Case: Molded plastic • Terminates: Plated leads solderable per MIL-STD-202, Method 208 .230(5.8) Mechanical Data .028(.71) .140(3.6) 1.0(25.4)MIN. .104(2.6) • Polarity: Cathode band • Mounting position: Any • Marking: Type number Absolute Maximum Ratings and Characteristics Ratings at 250C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols 2A01 2A02 2A03 2A04 2A05 2A06 2A07 Units Maximum peak repetitive reverse voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum working peak reverse voltage VRWM 50 100 200 400 600 800 1000 Volts VR 50 100 200 400 600 800 1000 Volts VR(RMS) 35 70 140 280 420 560 700 Volts Maximum DC blocking voltage Maximum RMS reverse voltage Maximum average rectified output current C (1) @TA=55 IO 2 Amps Non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 70 Amps Maximum forward voltage VFM 1.1 Volts IRM 5 50 µA I t rating for fusing (t<8.3ms) 2 It 17.5 A2s Typical junction capacitance (2) CJ 15 pF RθJA 60 K/W TJ, TS -65 to+150 O Maximum peak reverse current at rated DC blocking voltage @ IF= 2A O @TA = 25 C @TA = 100OC 2 Typical thermal resistance junction to ambient(1) Operating and Storage temperature range µA O C Notes: 1.Leads maintained at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1MHz and applied reverse voltage of 4V DC Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ 2A01 thru 2A07 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 175 200 10 I F , INSTANTANEOUS FORWARD CURRENT (A) Single phase half wave 60 Hz resistive or inductive load 9.5mm lead lengths 1.0 0.1 Tj=25o C Pulse Width=300 s 0.01 0 TA, AMBIENT TEMPERATURE (o C) 0.4 0.8 75 100 f=1MHz o Tj =25 C 60 45 30 15 8.3ms Single Half Sine-Wave JEDEC Mathod 1 10 1.6 Fig.2 Typical Forward Characteristics Fig.1 Forward Current Derating Curve 0 1.2 VF , INSTANTANEOUS FORWARD VOLTAGE (V) CJ , CAPACITANCE (pF) I FSM , PEAK FORWARD SURGE CURRENT (A) Io [AV] , AVERAGE FORWARD RECTIFIED CURRENT (A) 2.5 ® 10 1.0 100 NUMBER OF CYCLES AT 60 Hz 1 10 100 VR , REVERSE VOLTAGE (V) Fig.4 Typical Junction Capacitance Fig.3 Max Non-Repetitive Peak Forward Surge Current Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/