MURF1620N thru MURF1660N - Thinki Semiconductor Co.,Ltd.

®
MURF1620N thru MURF1660N
Pb
MURF1620N thru MURF1660N
Pb Free Plating Product
16.0 Ampere Unipolar/Common Anode Ultra Fast Recovery Rectifiers
Unit : inch (mm)
ITO-220AB
.189(4.8)
.165(4.2)
.272(6.9)
.248(6.3)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.130(3.3)
.114(2.9)
.606(15.4)
.583(14.8)
.112(2.85)
.100(2.55)
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Automotive Environment(Inverters/Converters)
Plating Power Supply,SMPS and UPS
Car Audio Amplifier and Sound Device System
.161(4.1)MAX
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
Mechanical Data
Case: Molded plastic Isolated/Insulated ITO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.03 gram approximately
.1
.1
(2.55)
(2.55)
Case
Case
.114(2.9)
.098(2.5)
.543(13.8)
.512(13.0)
Application
Negative
Positive
Common Cathode Common Anode
Suffix "CT"
Suffix "N"
.032(.8)
MAX
Case
Doubler
Suffix "D"
Case
Reverse Doubler
Suffix "E"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
MURF1620CT
MURF1620N
MURF1620D
MURF1620E
MURF1640CT
MURF1640N
MURF1640D
MURF1640E
MURF1660CT
MURF1660N UNIT
MURF1660D
MURF1660E
Maximum Recurrent Peak Reverse Voltage
VRRM
200
400
600
V
Maximum RMS Voltage
VRMS
140
280
420
V
Maximum DC Blocking Voltage
VDC
200
400
600
V
Maximum Average Forward Rectified
16.0
IF(AV)
o
Current TC=100 C
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
IFSM
175
VF
0.98
150
A
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
1.3
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
IR
uA
250
uA
nS
Trr
35
Typical junction Capacitance (Note 2)
CJ
90
Operating Junction and Storage
Temperature Range
V
10.0
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance (Note 3)
1.7
R JC
2.2
TJ, TSTG
-55 to + 150
pF
o
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
®
MURF1620N thru MURF1660N
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
200
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
16
13
10
8
6
4
60 Hz Resistive or
Inductive load
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
175
150
125
100
75
50
25
0
0
0
50
100
150
1
100
NUMBER OF CYCLES AT 60Hz
o
CASE TEMPERATURE, C
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
1000
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
MURF1620N
MURF1640N
1.0
MURF1660N
0.1
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ=125 C
100
10
o
TJ=25 C
1
0.1
0
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/