E13005D-213 Pb Free Plating Product ® Pb E13005D-213 MJE Power Transistor with Damping Diode MJE13005 series Product specification Silicon NPN Power Transistor DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. _____________________ Absolute Maximum Ratings ( Ta = 25℃ ) Parameter Active anti-saturation network l Value Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 4.0 A Base Current IB 2.0 A Ptot 70 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C C TO-220(M) Unit:mm Electrical Characteristics ( Ta = 25℃ ) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCE=700V, IE=0 — — 10 uA Emitter Cut-off Current IEBO VEB=6.0V, IC=0 — — 10 uA Collector-Emitter Sustaining Voltage VCEO IC=10mA, IB=0 400 — — V VCE=5V, IC=1.0A 15 — 30 DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) IC=4.0A,IB=1.0A — — 1.5 V Base-Emitter Saturation Voltage VBE(sat) IC=2.0A,IB=0.5A — — 1.6 V 4 — — MHz 2.0 2.5 4.0 us Current Gain Bandwidth Product fT VCE=10V, IC=0.5A Turn Off Time tS IB1=-IB2=0.5A, Page 1/1 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/